Abstract: A vaporizing device for vaporizing aromatic substances is provided. The vaporizing device includes a heat exchanger configured to heat fresh air to a sub-combustion vaporizing temperature while maintaining the fresh air free from combustion byproducts. The vaporizing device further includes an internal heating cavity configured to permit heating of the aromatic substance via convection.

Abstract: Disclosed is a method of growing thin and smooth germanium (Ge) on a strained or relaxed silicon (Si) layer comprising the steps of: (a) treating surface of the strained or relaxed Si layer to gaseous precursors of both Si (e.g., silane) and Ge (e.g., germane) for a predetermined short time duration ?t, where 1??t?30 seconds; and (b) depositing a thin Ge film on top of said treated Si layer, wherein said treatment step of (a) reduces growth time and surface roughness of the thin Ge film (e.g., sub-5 nm or sub-20 nm thick) deposited on the Si layer. The treatment step (a) can be conducted at a steady predetermined temperature T, where 450?T?900° C. The predetermined short time duration ?t can be chosen such that less than 10 A of SiGe is deposited.

Abstract: Techniques for making robust but precise electrical components, such as molded equalizers designed for interface with amplifiers in CATV or other communications equipment, are disclosed. An exemplary embodiment of an electrical component includes an injection-molded housing encapsulating an equalizer circuit and with pins protruding from one end. The housing and pins are designed for interface with predetermined locations in CATV amplifiers or optic nodes. The addition of the molten plastic changes the performance of the equalizer circuit, requiring pre-mold adjustments to the circuit design to be made in order for the final molded equalizer to achieve the desired operating characteristics.