Abstract: A method of switching a phase-change device (Device), including changing phase of the Device from a semiconducting 2H phase to a new 2Hd phase with a higher conductivity, the Device having an active material with a thickness including a phase transition material to thereby transition the Device from a high resistive state (HRS) to a low resistive state (LRS) by application of a set voltage and further to return the Device from the LRS back to the HRS by application of a reset voltage.

Abstract: A method of switching a phase-change device (Device), including changing phase of the Device from a semiconducting 2H phase to a new 2Hd phase with a higher conductivity, the Device having an active material with a thickness including a phase transition material to thereby transition the Device from a high resistive state (HRS) to a low resistive state (LRS) by application of a set voltage and further to return the Device from the LRS back to the HRS by application of a reset voltage.

Abstract: A method of switching a phase-change device (Device), including changing phase of the Device from a semiconducting 2H phase to a new 2Hd phase with a higher conductivity, the Device having an active material with a thickness including a phase transition material to thereby transition the Device from a high resistive state (HRS) to a low resistive state (LRS) by application of a set voltage and further to return the Device from the LRS back to the HRS by application of a reset voltage.

Abstract: A hydrogen storage material is provided, the hydrogen storage material comprises a hydride-forming solid disposed in a film, a hydrogen-diffusing solid media disposed in the film with the hydride-forming solid, and a high density of interfaces between the hydride-forming solid and the hydrogen-diffusing solid media in the film. The hydrogen storage material may be made by co-depositing the hydride-forming solid and the hydrogen-diffusing solid media to form the film having different solid phases of the hydride-forming solid and the hydrogen-diffusing solid media and a high density of interfaces therebetween.

Abstract: Novel Ti-Al-Nb-Cr alloys incorporating in their microstructure the hexagonal DO.sub.19 phase, the omega-type B8.sub.2 phase, the cubic B2 phase, and, optionally, the orthorhombic O phase. The intermetallic alloys consist essentially of, in atomic percent, about 48-62% Ti, about 28-32% Al, and about 10-20% Nb with Cr, wherein Cr is preferably present at about 4-16% of the total concentration.

Abstract: A Ti--Al--V--Cr intermetallic alloy having an atomic percent composition of 5-35 Al, 10-15 (V+Cr), the balance being Ti. The alloy is partially of DO.sub.19 type and partially of B2 type and has high temperature strength and excellent room temperature ductility. The alloy is produced by arc melting the metallic components Ti, Al and at least one of V and Cr; followed by homogenizing the melted components; solidifying the melted components to form an alloy; hot working the solidified alloy by isothermal forming to form a beta-phase polycrystalline microstructure; transforming the metastable .beta.-phase into a two-phase microstructure; and equilibrating the two-phase microstructure by prolonged annealing.

Abstract: An alloy comprising titanium, aluminum and niobium has a heterophase micrructure of an orthorhombic, Ti.sub.2 AlNb, phase and an omega-type, B8.sub.2, phase. An alloy is annealed to form the heterophase alloy with the orthorhombic and omega-type phases in thermodynamic equilibrium, and then cooled.