Abstract: Ceramic cold conductors based on barium titanates having the general formula:(Ba.sub.1-x M.sup.II)O.z(Ti.sub.1-y M.sup.IV y)O.sub.2wherein M.sup.II is selected from the group consisting of Ca, Mg, Sr and Pb; M.sup.IV is selected from the group consisting of Sn and Zr; x and y are numerals, the sum of which does not exceed one and z is a numeral in the range of 1.005 to 1.

Abstract: A low porosity sintered polycrystalline silicon film is produced by grinding initial silicon material in a non-oxygen-containing liquid, such as decahydronaphthalene, to an average grain size corresponding to a specific surface of at least 50 m.sup.2 /g; thickening the so-attained grinding mass with a non-oxygen-containing material, such as polyisobutylene and/or polyethylene in a suitable solvent, so as to attain a viscosity in the resultant slip suitable for drawing a film from such slip, and drawing a film from such slip, optionally dividing the film into desired sized pieces, and sintering the resultant film or pieces.

Abstract: The invention provides an improved method for producing plate-shaped or tape-shaped silicon crystal bodies having pillar-like structures therein which are equivalent to columnar structures comprising conducting the sintering process, for purposes of particle enlargement, in a gas atmosphere comprised of argon and a minimum amount of hydrogen. In a preferred embodiment, the hydrogen concentration in such atmosphere is about 6% by volume. The so-produced silicon bodies are useful for further processing into large-surface solar cells.

Abstract: A ceramic compound having the formula (La.sub.x A.sup.+2.sub.1-x).sub.2 (Ti.sub.x B.sup.+5.sub.1-x).sub.2 O.sub.7 wherein A.sup.+2 is a positive divalent element selected from the group consisting of Ba, Ca, Cd, Mg, Sr and mixtures thereof and B.sup.+5 is a positive pentavalent element selected from the group consisting of Sb, Mo, Nb, Ta, W and mixtures thereof and x is a numeral ranging from 0.70 to 0.99. This compound is characterized by a relatively small temperature coefficient of permittivity, a relatively high insulation resistance, a relatively low loss factor and is compatible with relatively low cost noble metals, making it useful for forming dielectric elements in monolithic multi-layer capacitor elements.