Abstract: A photovoltaic (PV) module mounting system can have mounting clips that can be moved up and down a roof, and can allow the height of the mounting clips to be adjusted relative to the roof. At least a portion of the system can be made of a non-conductive material so that the system can be free of a grounding unit. The system can allow solar modules to be quickly installed, and can allow the solar modules to be removed quickly for repair or in the event of a fire.

Abstract: A photovoltaic (PV) module mounting system can have mounting clips that can be moved up and down a roof, and can allow the height of the mounting clips to be adjusted relative to the roof. At least a portion of the system can be made of a non-conductive material so that the system can be free of a grounding unit. The system can allow solar modules to be quickly installed, and can allow the solar modules to be removed quickly for repair or in the event of a fire.

Abstract: A method for encapsulating photovoltaic cells into single functional units is described. These units share the mechanical and electric properties of the encapsulation layers and allow for flexible module architecture to be implemented at the cell level. This enables cost reduction and improved performance of photovoltaic power generation.

Abstract: A photovoltaic (PV) module mounting system can have mounting clips that can be moved up and down a roof, and can allow the height of the mounting clips to be adjusted relative to the roof. At least a portion of the system can be made of a non-conductive material so that the system can be free of a grounding unit. The system can allow solar modules to be quickly installed, and can allow the solar modules to be removed quickly for repair or in the event of a fire.

Abstract: A method for encapsulating photovoltaic cells into single functional units is described. These units share the mechanical and electric properties of the encapsulation layers and allow for flexible module architecture to be implemented at the cell level. This enables cost reduction and improved performance of photovoltaic power generation.

Abstract: Methods for forming semiconductor devices include providing a textured template, forming a buffer layer over the textured template, forming a substrate layer over the buffer layer, removing the textured template, thereby exposing a surface of the buffer layer, and forming a semiconductor layer over the exposed surface of the buffer layer.

Abstract: Methods for forming semiconductor devices include providing a crystalline template having an initial grain size, annealing the crystalline template, the annealed template having a final grain size larger than the initial grain size, forming a buffer layer over the annealed template, and forming a semiconductor layer over the buffer layer.

Abstract: A semiconductor structure may include a polycrystalline substrate comprising a metal, the polycrystalline substrate having substantially randomly oriented grains, as well as a buffer layer disposed thereover. The buffer layer may comprise a plurality of islands having an average island spacing therebetween. A polycrystalline semiconductor layer is disposed over the buffer layer.

Abstract: A template for growth of an anticipated semiconductor film has a deformation textured substrate. The template also has an intermediate epitaxial film coupled to the deformation textured substrate, the intermediate epitaxial film being chemically compatible and substantially lattice matched with the anticipated semiconductor film. A method of manufacturing a template for the growth of an anticipated semiconductor is also disclosed. A substrate is deformed to produce a textured surface. An intermediate epitaxial film, chemically compatible and substantially lattice matched with the anticipated semiconductor film, is deposited. A further disclosed photovoltaic device has a semiconductor layer, a deformation textured substrate, and an intermediate epitaxial film coupled to the deformation textured substrate. The intermediate epitaxial film is chemically compatible and substantially lattice matched with the semiconductor layer. The semiconductor layer is epitaxially grown on the intermediate epitaxial film.

Abstract: Methods for forming semiconductor devices include providing a textured template, forming a buffer layer over the textured template, forming a substrate layer over the buffer layer, removing the textured template, thereby exposing a surface of the buffer layer, removing oxide from the exposed surface of the buffer layer, and forming a semiconductor layer over the exposed surface of the buffer layer.

Abstract: Methods for forming semiconductor devices include providing a crystalline template having an initial grain size, annealing the crystalline template, the annealed template having a final grain size larger than the initial grain size, forming a buffer layer over the annealed template, and forming a semiconductor layer over the buffer layer.

Abstract: Semiconductor structures include a substantially untextured substrate layer, a textured buffer layer disposed over the substrate layer, and a semiconductor layer disposed over the textured buffer layer.

Abstract: Methods for forming semiconductor devices include providing a textured template, forming a buffer layer over the textured template, forming a substrate layer over the buffer layer, removing the textured template, thereby exposing a surface of the buffer layer, and forming a semiconductor layer over the exposed surface of the buffer layer.

Abstract: High strength aluminum alloy powders, extrusions, and forgings are provided in which the aluminum alloys exhibit high strength at atmospheric temperatures and maintain high strength and ductility at extremely low temperatures. The alloy is produced by blending about 89 atomic % to 99 atomic % aluminum, 1 atomic % to 11 atomic % of a secondary metal selected from the group consisting of magnesium, lithium, silicon, titanium, zirconium, and combinations thereof, and up to about 10 atomic % of a tertiary metal selected from the group consisting of Be, Ca, Sr, Ba, Ra, Sc, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, W, and combinations thereof. The alloy is produced by nanostructure material synthesis, such as cryomilling, in the absence of refractory dispersoids. The synthesized alloy is then canned, degassed, consolidated, extruded, and optionally forged into a solid metallic component. Grain size within the alloy is less than 0.5 ?m, and alloys with grain size less than 0.

Abstract: Superconducting cables and magnetic devices are disclosed.

Abstract: The invention relates to multi-layer articles and methods of making such articles. The methods include first conditioning the surface of an underlying layer, such as a buffer layer or a superconductor layer, then disposing a layer of material on the conditioned surface. The conditioned surface can be a high quality surface. Superconductor articles formed by these methods can exhibit relatively high critical current densities.

Abstract: Superconducting cables and magnetic devices are disclosed.

Abstract: High strength aluminum alloy powders, extrusions, and forgings are provided in which the aluminum alloys exhibit high strength at atmospheric temperatures and maintain high strength and ductility at extremely low temperatures. The alloy is produced by blending about 89 atomic % to 99 atomic % aluminum, 1 atomic % to 11 atomic % of a secondary metal selected from the group consisting of magnesium, lithium, silicon, titanium, zirconium, and combinations thereof, and up to about 10 atomic % of a tertiary metal selected from the group consisting of Be, Ca, Sr, Ba, Ra, Sc, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, W, and combinations thereof. The alloy is produced by nanostructure material synthesis, such as cryomilling, in the absence of refractory dispersoids. The synthesized alloy is then canned, degassed, consolidated, extruded, and optionally forged into a solid metallic component. Grain size within the alloy is less than 0.5 ?m, and alloys with grain size less than 0.

Abstract: The invention relates to superconductor articles, and compositions and methods for making superconductor articles. The methods can include using a precursor solution having a relatively small concentration of total free acid. The articles can include more than one layer of superconductor material in which at least one layer of superconductor material can be formed by a solution process, such as a solution process involving the use of metalorganic precursors.