Patents by Inventor Lester A. D'Cruz
Lester A. D'Cruz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7777197Abstract: Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber, a heating device in communication with the vacuum chamber, and combinations thereof are provided. In one embodiment, the vacuum chamber comprises an electron source wherein the electron source comprises a cathode connected to a high voltage source, an anode connected to a low voltage source, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.Type: GrantFiled: June 22, 2006Date of Patent: August 17, 2010Assignee: Applied Materials, Inc.Inventors: Amir Al-Bayati, Lester A. D'Cruz, Alexandros T. Demos, Dale R. Dubois, Khaled A. Elsheref, Naoyuki Iwasaki, Hichem M'Saad, Juan Carlos Rocha-Alvarez, Ashish Shah, Takashi Shimizu
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Patent number: 7611996Abstract: Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.Type: GrantFiled: March 21, 2005Date of Patent: November 3, 2009Assignee: Applied Materials, Inc.Inventors: Francimar Schmitt, Yi Zheng, Kang Sub Yim, Sang H. Ahn, Lester A. D'Cruz, Dustin W. Ho, Alexandros T. Demos, Li-Qun Xia, Derek R. Witty, Hichem M'Saad
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Patent number: 7547643Abstract: Adhesion of a porous low K film to an underlying barrier layer is improved by forming an intermediate layer lower in carbon content, and richer in silicon oxide, than the overlying porous low K film. This adhesion layer can be formed utilizing one of a number of techniques, alone or in combination. In one approach, the adhesion layer can be formed by introduction of a rich oxidizing gas such as O2/CO2/etc. to oxidize Si precursors immediately prior to deposition of the low K material. In another approach, thermally labile chemicals such as alpha-terpinene, cymene, and any other non-oxygen containing organics are removed prior to low K film deposition. In yet another approach, the hardware or processing parameters, such as the manner of introduction of the non-silicon containing component, may be modified to enable formation of an oxide interface prior to low K film deposition.Type: GrantFiled: January 28, 2005Date of Patent: June 16, 2009Assignee: Applied Materials, Inc.Inventors: Francimar Schmitt, Alexandros T. Demos, Derek R. Witty, Hichem M'Sadd, Sang H. Ahn, Lester A. D'Cruz, Khaled A. Elsheref, Zhenjiang Cui
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Publication number: 20090011148Abstract: Adhesion between a copper metallization layer and a dielectric barrier film may be promoted by stabilizing a flow of a silicon-containing precursor in a divert line leading to the chamber exhaust. The stabilized gas flow is then introduced to the processing chamber to precisely form a silicide layer over the copper. This silicidation step creates a network of strong Cu—Si bonds that prevent delamination of the barrier layer, while not substantially altering the sheet resistance and other electrical properties of the resulting metallization structure.Type: ApplicationFiled: June 17, 2008Publication date: January 8, 2009Applicant: Applied Materials, Inc.Inventors: Nagarajan Rajagopalan, Bok Heon Kim, Lester A. D'Cruz, Zhenjiang Cui, Girish A. Dixit, Visweswaren Sivaramakrishnan, Hichem M'Saad, Meiyee Shek, Li-Qun Xia
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Publication number: 20080099920Abstract: Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.Type: ApplicationFiled: October 22, 2007Publication date: May 1, 2008Applicant: APPLIED MATERIALS, INC. A Delaware corporationInventors: Francimar Schmitt, Yi Zheng, Kang Yim, Sang Ahn, Lester D'Cruz, Dustin Ho, Alexandros Demos, Li-Qun Xia, Derek Witty, Hichem M'Saad
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Publication number: 20060289795Abstract: Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber; and a heating device in communication with the vacuum chamber and combinations thereof are provided. In one embodiment, the vacuum chamber comprises a cathode, an anode, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.Type: ApplicationFiled: May 15, 2006Publication date: December 28, 2006Inventors: Dale Dubois, Juan Rocha-Alvarez, Amir Al-Bayati, Khaled Elsheref, Alexandros Demos, Lester D'Cruz, Hichem M'Saad, Ashish Shah, Takashi Shimizu, Naoyuki Iwasaki
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Publication number: 20060272772Abstract: Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber, a heating device in communication with the vacuum chamber, and combinations thereof are provided. In one embodiment, the vacuum chamber comprises an electron source wherein the electron source comprises a cathode connected to a high voltage source, an anode connected to a low voltage source, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.Type: ApplicationFiled: June 22, 2006Publication date: December 7, 2006Inventors: Amir Al-Bayati, Lester D'Cruz, Alexandros Demos, Dale Dubois, Khaled Elsheref, Naoyuki Iwasaki, Hichem M'Saad, Juan Rocha-Alvarez, Ashish Shah, Takashi Shimizu
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Publication number: 20050230834Abstract: Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.Type: ApplicationFiled: March 21, 2005Publication date: October 20, 2005Applicant: Applied Materials, Inc.Inventors: Francimar Schmitt, Yi Zheng, Kang Yim, Sang Ahn, Lester D'Cruz, Dustin Ho, Alexandros Demos, Li-Qun Xia, Derek Witty, Hichem M'Saad
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Publication number: 20050233591Abstract: Adhesion of a porous low K film to an underlying barrier layer is improved by forming an intermediate layer lower in carbon content, and richer in silicon oxide, than the overlying porous low K film. This adhesion layer can be formed utilizing one of a number of techniques, alone or in combination. In one approach, the adhesion layer can be formed by introduction of a rich oxidizing gas such as O2/CO2/etc. to oxidize Si precursors immediately prior to deposition of the low K material. In another approach, thermally labile chemicals such as alpha-terpinene, cymene, and any other non-oxygen containing organics are removed prior to low K film deposition. In yet another approach, the hardware or processing parameters, such as the manner of introduction of the non-silicon containing component, may be modified to enable formation of an oxide interface prior to low K film deposition.Type: ApplicationFiled: January 28, 2005Publication date: October 20, 2005Applicant: Applied Materials, Inc.Inventors: Francimar Schmitt, Alexandros Demos, Derek Witty, Hichem M'Sadd, Sang Ahn, Lester D'Cruz, Khaled Elsheref, Zhenjiang Cui
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Publication number: 20050186339Abstract: Adhesion between a copper metallization layer and a dielectric barrier film may be promoted by stabilizing a flow of a silicon-containing precursor in a divert line leading to the chamber exhaust. The stabilized gas flow is then introduced to the processing chamber to precisely form a silicide layer over the copper. This silicidation step creates a network of strong Cu—Si bonds that prevent delamination of the barrier layer, while not substantially altering the sheet resistance and other electrical properties of the resulting metallization structure.Type: ApplicationFiled: February 20, 2004Publication date: August 25, 2005Applicant: APPLIED MATERIALS, INC., A Delaware corporationInventors: Nagarajan Rajagopalan, Bok Kim, Lester D'Cruz, Zhenjiang Cui, Girish Dixit, Visweswaren Sivaramakrishnan, Hichem M'Saad, Meiyee Shek, Li-Qun Xia
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Patent number: 6664202Abstract: A mixed-frequency, high temperature PECVD process is utilized to create a high quality silicon nitride layer having highly conformal properties. Deposition in an ammonia rich ambient at high temperature reduces microloading between dense and isolated features by improving surface mobility of precursors. High quality nitride films formed by the instant process are particularly suited for front-end applications such as the formation of spacer structures and the formation of contact etch stop layers.Type: GrantFiled: April 18, 2002Date of Patent: December 16, 2003Assignee: Applied Materials Inc.Inventors: Sum-Yee Tang, May Yuxiang Wang, Lester A. D'Cruz
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Publication number: 20030211244Abstract: A method for depositing a low dielectric constant film having a dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided by reacting a gas mixture including one or more organosilicon compounds and one or more oxidizing gases. In one aspect, the organosilicon compound comprises a hydrocarbon component having one or more unsaturated carbon-carbon bonds, and in another aspect, the gas mixture further comprises one or more aliphatic hydrocarbon compounds having one or more unsaturated carbon-carbon bonds. The low dielectric constant film is post-treated after it is deposited. In one aspect, the post treatment is an electron beam treatment, and in another aspect, the post-treatment is an annealing process.Type: ApplicationFiled: April 8, 2003Publication date: November 13, 2003Applicant: Applied Materials, Inc.Inventors: Lihua Li, Wen H. Zhu, Tzu-Fang Huang, Li-Qun Xia, Ellie Y. Yieh, Son Van Nguyen, Lester A. D'Cruz, Troy Kim, Dian Sugiarto, Peter Wai-Man Lee, Hichem M'Saad, Melissa M. Tam, Yi Zheng, Srinivas D. Nemani
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Publication number: 20030199175Abstract: A mixed-frequency, high temperature PECVD process is utilized to create a high quality silicon nitride layer having highly conformal properties. Deposition in an ammonia rich ambient at high temperature reduces microloading between dense and isolated features by improving surface mobility of precursors. High quality nitride films formed by the instant process are particularly suited for front-end applications such as the formation of spacer structures and the formation of contact etch stop layers.Type: ApplicationFiled: April 18, 2002Publication date: October 23, 2003Applicant: Applied Materials, Inc.Inventors: Sum-Yee Tang, May Yuxiang Wang, Lester A. D'Cruz