Abstract: A process and structure for forming an optical subassembly in an integrated circuit, comprising: defining electrically conducting lines and bonding pads in a metallization layer on a substrate; depositing a passivation layer over the metallization layer; etching the passivation layer to remove the passivation layer from each of the bonding pads and a portion of the metallization layer associated with each of the bonding pads; diffusing Cr from the lines proximate said bonding pads to prevent solder wetting down lines; bonding an optical device to one of the bonding pads; and attaching the substrate to a carrier utilizing solder bond attachment.

Abstract: A composite electronic and/or optical substrate including polymeric and ceramic material wherein the composite substrate has a dielectric constant less than 4 and a coefficient of thermal expansion of 8 to 14 ppm/°C. at 100° C. The composite substrate may be either ceramic-filled polymeric material or polymer-filled ceramic material.

Abstract: A process and structure for forming an optical subassembly in an integrated circuit, comprising: defining electrically conducting lines and bonding pads in a metallization layer on a substrate; depositing a passivation layer over the metallization layer; etching the passivation layer to remove the passivation layer from each of the bonding pads and a portion of the metallization layer associated with each of the bonding pads; diffusing Cr from the lines proximate said bonding pads to prevent solder wetting down lines; bonding an optical device to one of the bonding pads; and attaching the substrate to a carrier utilizing solder bond attachment.

Abstract: A process wherein a low viscosity, metal-containing paste is screened onto a ceramic greensheet and then sets up to increase its viscosity. In one method, the low viscosity is caused by excess solvent which is then blotted or otherwise removed so that the viscosity of the paste is increased. In an alternative method, the low viscosity paste contains a cross-linking agent which causes the paste to increase its viscosity after screening.

Abstract: A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.

Abstract: A method and structure for personalizing a multi-layer substrate structure includes supplying a generic layer having electrical features and altering the electrical features to produce a personalized layer of the multi-layer substrate.

Abstract: A method and structure for personalizing a multi-layer substrate structure includes supplying a generic layer having electrical features and altering the electrical features to produce a personalized layer of the multi-layer substrate.

Abstract: A process wherein a low viscosity, metal-containing paste is screened onto a ceramic greensheet and then sets up to increase its viscosity. In one method, the low viscosity is caused by excess solvent which is then blotted or otherwise removed so that the viscosity of the paste is increased. In an alternative method, the low viscosity paste contains a cross-linking agent which causes the paste to increase its viscosity after screening.

Abstract: Disclosed is a flex die punching apparatus for forming an aperture in at least one sheet of material. There is a flexible, extrudable platen which, upon exertion of a force against it, extrudes at least a portion of at least one sheet of material through an aperture of a die. The flexible, extrudable platen may have a punch feature, corresponding to the shape and position of the die aperture, which assists in the extruding of the flexible, extrudable platen through the die aperture and also in the formation of the aperture in the sheet of material. In another embodiment of the invention, there may be a second die wherein the at least one sheet of material is placed between the first and second dies to form the aperture in the sheet of material.

Abstract: A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.

Abstract: Disclosed is a flex die punching apparatus for forming an aperture in at least one sheet of material. There is a flexible, extrudable platen which, upon exertion of a force against it, extrudes at least a portion of at least one sheet of material through an aperture of a die. The flexible, extrudable platen may have a punch feature, corresponding to the shape and position of the die aperture, which assists in the extruding of the flexible, extrudable platen through the die aperture and also in the formation of the aperture in the sheet of material. In another embodiment of the invention, there may be a second die wherein the at least one sheet of material is placed between the first and second dies to form the aperture in the sheet of material.

Abstract: The present invention relates generally to a new process for hermetically sealing of a high thermally conductive substrate, such as, an aluminum nitride substrate, using a low thermally conductive interposer and structure thereof. More particularly, the invention encompasses a hermetic cap which is secured to an aluminum nitride substrate using the novel thermal interposer. The novel thermal interposer basically comprises of layers of relatively high thermal conductive metallic materials sandwiching a core layer of low thermal conductive metallic material.

Abstract: Disclosed is a flex die punching apparatus for forming an aperture in at least one sheet of material. There is a flexible, extrudable platen which, upon exertion of a force against it, extrudes at least a portion of at least one sheet of material through an aperture of a die. The flexible, extrudable platen may have a punch feature, corresponding to the shape and position of the die aperture, which assists in the extruding of the flexible, extrudable platen through the die aperture and also in the formation of the aperture in the sheet of material. In another embodiment of the invention, there may be a second die wherein the at least one sheet of material is placed between the first and second dies to form the aperture in the sheet of material.

Abstract: The present invention relates generally to a new process for hermetically sealing of a high thermally conductive substrate, such as, an aluminum nitride substrate, using a low thermally conductive interposer and structure thereof. More particularly, the invention encompasses a hermetic cap which is secured to an aluminum nitride substrate using the novel thermal interposer. The novel thermal interposer basically comprises of layers of relatively high thermal conductive metallic materials sandwiching a core layer of low thermal conductive metallic material.

Abstract: A method and apparatus for flattening a ceramic body comprised primarily of an aluminum nitride system having a liquid phase additive necessary for low temperature sintering during a firing thereof is disclosed. The ceramic body is referred to as an aluminum nitride multilayer ceramic (AlN MLC). The method and apparatus include a support tile having a first coating on a contact surface thereof, the AlN MLC for being placed upon the contact surface of the support tile. A load flattening tile having a second coating on a contact surface thereof is provided, the load flattening tile for being placed with its coated surface upon and in contact with the AlN MLC. Lastly, a furnace is provided for heating the support tile, AlN MLC, and load flattening tile at temperatures greater than 1500.degree. C.

Abstract: A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.

Abstract: Disclosed is a method of forming an aluminum nitride article. The method includes the steps of adding platinum to a composition including a binder, aluminum nitride particles and a sintering aid; forming the composition into an article; placing the article in a substantially non-carbonaceous container; and sintering the article in a reducing atmosphere to cause removal of the binder and densification of the aluminum nitride article, wherein the platinum catalyzes the removal of the binder.

Abstract: Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.

Abstract: Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.