Abstract: In certain aspects, a method for temperature monitoring comprises receiving temperature readings from a plurality of temperature sensors on a chip, and determining an average or a sum of the temperature readings from the temperature sensors. The sum may be a weighted sum of the temperature readings. The method also comprises computing a temperature at a location on the chip based on the average or sum of the temperature readings. The location may be located at approximately a centroid of the locations of the temperature sensors, an estimated hotspot location on the chip, or another location on the chip.

Abstract: A capacitor includes a semiconductor substrate. The capacitor also includes a first terminal having a fin disposed on a surface of the semiconductor substrate. The capacitor further includes a dielectric layer disposed onto the fin. The capacitor still further includes a second terminal having a FinFET compatible high-K metal gate disposed proximate and adjacent to the fin.

Abstract: A memory device comprises a memory array, at least one row address buffer, a set of row data buffers, a row decoder, an array of sense amplifiers, and a demultiplexer. The memory array comprises data elements organized into rows and columns. Each of the rows is addressable by a row address. Each of the data elements in each of the rows is addressable by a column address. The at least one row address buffer holds a selected row address of a set of successive selected row addresses. The set of row data buffers holds respective contents of selected rows that correspond to the set of successive selected row addresses. The row decoder decodes the selected row address to access a selected row. The array of sense amplifier reads the selected row and transmits content of the selected row to one of the row data buffers through the demultiplexer, and writes the content of the selected row back to the selected row.

Abstract: A memory device comprises a memory array, at least one row address buffer, a set of row data buffers, a row decoder, an array of sense amplifiers, and a demultiplexer. The memory array comprises data elements organized into rows and columns. Each of the rows is addressable by a row address. Each of the data elements in each of the rows is addressable by a column address. The at least one row address buffer holds a selected row address of a set of successive selected row addresses. The set of row data buffers holds respective contents of selected rows that correspond to the set of successive selected row addresses. The row decoder decodes the selected row address to access a selected row. The array of sense amplifier reads the selected row and transmits content of the selected row to one of the row data buffers through the demultiplexer, and writes the content of the selected row back to the selected row.

Abstract: A memory device comprises a memory array, at least one row address buffer, a set of row data buffers, a row decoder, an array of sense amplifiers, and a demultiplexer. The memory array comprises data elements organized into rows and columns. Each of the rows is addressable by a row address. Each of the data elements in each of the rows is addressable by a column address. The at least one row address buffer holds a selected row address of a set of successive selected row addresses. The set of row data buffers holds respective contents of selected rows that correspond to the set of successive selected row addresses. The row decoder decodes the selected row address to access a selected row. The array of sense amplifier reads the selected row and transmits content of the selected row to one of the row data buffers through the demultiplexer, and writes the content of the selected row back to the selected row.

Abstract: A capacitor includes a semiconductor substrate. The capacitor also includes a first terminal having a fin disposed on a surface of the semiconductor substrate. The capacitor further includes a dielectric layer disposed onto the fin. The capacitor still further includes a second terminal having a FinFET compatible high-K metal gate disposed proximate and adjacent to the fin.

Abstract: A memory device comprises a memory array, at least one row address buffer, a set of row data buffers, a row decoder, an array of sense amplifiers, and a demultiplexer. The memory array comprises data elements organized into rows and columns. Each of the rows is addressable by a row address. Each of the data elements in each of the rows is addressable by a column address. The at least one row address buffer holds a selected row address of a set of successive selected row addresses. The set of row data buffers holds respective contents of selected rows that correspond to the set of successive selected row addresses. The row decoder decodes the selected row address to access a selected row. The array of sense amplifier reads the selected row and transmits content of the selected row to one of the row data buffers through the demultiplexer, and writes the content of the selected row back to the selected row.

Abstract: A computing system includes at least one functional unit and a magnetic random access memory (MRAM) block coupled to the at least one functional unit. The MRAM block is configured to store a functional state of the at least one functional unit during a power down state of the at least one functional unit.

Abstract: An on-chip sensor measures dynamic power supply noise, such as voltage droop, on a semiconductor chip. In-situ logic is employed, which is sensitive to noise present on the power supply of functional logic of the chip. Exemplary functional logic includes a microprocessor, adder, and/or other functional logic of the chip. The in-situ logic performs some operation, and the amount of time required for performing that operation (i.e., the operational delay) is sensitive to noise present on the power supply. Thus, by evaluating the operational delay of the in-situ logic, the amount of noise present on the power supply can be measured.

Abstract: An on-chip sensor measures dynamic power supply noise, such as voltage droop, on a semiconductor chip. In-situ logic is employed, which is sensitive to noise present on the power supply of functional logic of the chip. Exemplary functional logic includes a microprocessor, adder, and/or other functional logic of the chip. The in-situ logic performs some operation, and the amount of time required for performing that operation (i.e., the operational delay) is sensitive to noise present on the power supply. Thus, by evaluating the operational delay of the in-situ logic, the amount of noise present on the power supply can be measured.

Abstract: Systems, circuits and methods for software programmable logic using Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) technology are disclosed. Magnetic tunnel junction (MTJ) storage elements can be formed into input planes and output planes. The input planes and output planes can be coupled together to form complex arrays that allow for the realization of logic functions.

Abstract: Systems, circuits and methods for software programmable logic using Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) technology are disclosed. Magnetic tunnel junction (MTJ) storage elements can be formed into input planes and output planes. The input planes and output planes can be coupled together to form complex arrays that allow for the realization of logic functions.

Abstract: Systems, circuits and methods for software programmable logic using Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) technology are disclosed. Magnetic tunnel junction (MTJ) storage elements can be formed into input planes and output planes. The input planes and output planes can be coupled together to form complex arrays that allow for the realization of logic functions.

Abstract: Electronic circuits use latches including a magnetic tunnel junction (MTJ) structure and logic circuitry arranged to produce a selective state in the MTJ structure. Because the selective state is maintained magnetically, the state of the latch or electronic circuit can be maintained even while power is removed from the electronic device.

Abstract: Systems, circuits and methods for software programmable logic using Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) technology are disclosed. Magnetic tunnel junction (MTJ) storage elements can be formed into input planes and output planes. The input planes and output planes can be coupled together to form complex arrays that allow for the realization of logic functions.

Abstract: Systems, circuits and methods for software programmable logic using Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) technology are disclosed. Magnetic tunnel junction (MTJ) storage elements can be formed into input planes and output planes. The input planes and output planes can be coupled together to form complex arrays that allow for the realization of logic functions.

Abstract: A computing system includes at least one functional unit and a magnetic random access memory (MRAM) block coupled to the at least one functional unit. The MRAM block is configured to store a functional state of the at least one functional unit during a power down state of the at least one functional unit.

Abstract: A full-scan latch is provided that may be used to incorporate design for test functionality in an integrated circuit. The full-scan latch includes a shadow latch, a multiplexer, and a slave latch. The full-scan latch has a test mode and a normal mode. When in the normal mode, the device operates as a transparent latch, passing a data input to its output. When in test mode, the device is operable to pass scan data down a scan chain and to inject scan data into the data path.

Abstract: Systems, circuits and methods for software programmable logic using Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) technology are disclosed. Magnetic tunnel junction (MTJ) storage elements can be formed into input planes and output planes. The input planes and output planes can be coupled together to form complex arrays that allow for the realization of logic functions.

Abstract: A full-scan latch is provided that may be used to incorporate design for test functionality in an integrated circuit. The full-scan latch includes a shadow latch, a multiplexer, and a slave latch. The full-scan latch has a test mode and a normal mode. When in the normal mode, the device operates as a transparent latch, passing a data input to its output. When in test mode, the device is operable to pass scan data down a scan chain and to inject scan data into the data path.