Abstract: Some implementations provide a package that includes a first die and a second die adjacent to the first die. The second die is capable of heating the first die. The package also includes a leakage sensor configured to measure a leakage current of the first die. The package also includes a thermal management unit coupled to the leakage sensor. The thermal management unit configured to control a temperature of the first die based on the leakage current of the first die.

Abstract: A capacitor includes a semiconductor substrate. The capacitor also includes a first terminal having a fin disposed on a surface of the semiconductor substrate. The capacitor further includes a dielectric layer disposed onto the fin. The capacitor still further includes a second terminal having a FinFET compatible high-K metal gate disposed proximate and adjacent to the fin.

Abstract: A stacked integrated circuit includes a first tier IC and a second tier IC. Active faces of the first tier IC and the second tier IC face each other. An interconnect structure, such as microbumps, couples the first tier IC to the second tier IC. An active portion of a voltage regulator is integrated in the first semiconductor IC and coupled to passive components (for example a capacitor or an inductor) embedded in a packaging substrate on which the stacked IC is mounted. The passive components may be multiple through vias in the packaging substrate providing inductance to the active portion of the voltage regulator. The inductance provided to the active portion of the voltage regulator is increased by coupling the through via in the packaging substrate to through vias in a printed circuit board that the packaging substrate is mounted on.

Abstract: A stacked integrated circuit includes a first tier IC and a second tier IC. Active faces of the first tier IC and the second tier IC face each other. An interconnect structure, such as microbumps, couples the first tier IC to the second tier IC. An active portion of a voltage regulator is integrated in the first semiconductor IC and coupled to passive components (for example a capacitor or an inductor) embedded in a packaging substrate on which the stacked IC is mounted. The passive components may be multiple through vias in the packaging substrate providing inductance to the active portion of the voltage regulator. The inductance provided to the active portion of the voltage regulator is increased by coupling the through via in the packaging substrate to through vias in a printed circuit board that the packaging substrate is mounted on.

Abstract: An image divided into N pixel blocks, stored block wise in a camera core and transferred block wise from the camera core to a downstream processing engine local to the local memory. A direct handshaking is communicated, between the camera core and the downstream processing engine, in the block wise transfers. Optionally an optical sensor scanner divides the image with a scan rate N times a frame rate, each scan providing a block of the frame. Optionally, the block wise transfer includes a transfer through a local memory, local to the camera core, controlled by the direct handshaking.

Abstract: Methods and circuits for optimizing performance and power consumption in a circuit design and circuit employing one or more lower threshold voltage (Lvt) cells or devices are described. A base supply voltage amplitude is determined for providing operating power for the circuit. The base supply voltage amplitude is a low or lowest voltage level that still satisfies a performance specification for the circuit. Providing a low or lowest base supply voltage level reduces or minimizes the standby (i.e., non-switching) power consumption in the Lvt device(s) since current leakage is reduced as the supply voltage level is reduced. Reducing the supply voltage level used to power the Lvt device(s) also reduces active power consumption for the circuit as well. Thus, total power consumption is optimized or reduced while still receiving the benefit of using Lvt devices to optimize or increase performance of a circuit layout and circuit.

Abstract: Systems and method for a capacitor-less Low Dropout (LDO) voltage regulator. An error amplifier is configured to amplify a differential between a reference voltage and a regulated LDO voltage. Without including an external capacitor in the LDO voltage regulator, a Miller amplifier is coupled to an output of the error amplifier, wherein the Miller amplifier is configured to amplify a Miller capacitance formed at an input node of the Miller amplifier. A capacitor coupled to the output of the error amplifier creates a positive feedback loop for decreasing a quality factor (Q), such that system stability is improved.

Abstract: A semiconductor device having an on-chip voltage regulator to control on-chip voltage regulation and methods for on-chip voltage regulation are disclosed. A semiconductor device includes a circuit positioned between a ground bus and a power bus. A power switch array is positioned between the circuit and one of the ground bus or the power bus to generate a virtual voltage across the circuit. A monitor is positioned between the ground bus and the power bus. The monitor is configured to simulate a critical path of the circuit and to output a voltage adjust signal based on an output of the simulated critical path. A controller is configured to receive the voltage adjust signal and to output a control signal to the power switch array to control the virtual voltage.

Abstract: A stacked integrated circuit (IC) device includes a semiconductor IC having an active face, and an interconnect structure. The active face receives a regulated voltage from a voltage regulator (MEG). An active portion of the VREG, which supplies the regulated voltage to the semiconductor IC is coupled to the interconnect structure. A packaging substrate includes one or more inductors including a first set of through vias. The first set of through vias are coupled to the interconnect structure and cooperate with the active portion to provide the regulated voltage for the semiconductor IC. The IC also includes a printed circuit board (PCB) coupled to the packaging substrate. The PCB includes a second set of through vias coupled to the first set of through vias. The IC also includes one or more conducting paths on the PCB. The conducting path(s) couple together at least two through vias of the second set of through vias.

Abstract: A capacitor includes a semiconductor substrate. The capacitor also includes a first terminal having a fin disposed on a surface of the semiconductor substrate. The capacitor further includes a dielectric layer disposed onto the fin. The capacitor still further includes a second terminal having a FinFET compatible high-K metal gate disposed proximate and adjacent to the fin.

Abstract: Some implementations provide a semiconductor package that includes a first die and a second die adjacent to the first die. The second die is capable of heating the first die. The semiconductor package also includes a leakage sensor configured to measure a leakage current of the first die. The semiconductor package also includes a thermal management unit coupled to the leakage sensor. The thermal management unit configured to control a temperature of the first die based, on the leakage current of the first die.

Abstract: Systems and methods of leakage control in an asynchronous pipeline are disclosed. In an embodiment, a signal is received from a preceding stage at an operative stage of an asynchronous circuit device, and a switch associated with the operative stage is activated in response to the control signal being sent to the operative stage to enable power to the operative stage.

Abstract: A three dimensional on-chip radio frequency amplifier is disclosed that includes first and second transformers and a first transistor. The first transformer includes first and second inductively coupled inductors. The second transformer includes third and fourth inductively coupled inductors. Each inductor includes multiple first segments in a first metal layer; multiple second segments in a second metal layer; first and second inputs, and multiple through vias coupling the first and second segments to form a continuous path between the first and second inputs. The first input of the first inductor is coupled to an amplifier input; the first input of the second inductor is coupled to the first transistor gate; the first input of the third inductor is coupled to the first transistor drain, the first input of the fourth inductor is coupled to an amplifier output. The second inductor inputs and the first transistor source are coupled to ground.

Abstract: A bandgap sensor which measures temperatures within an integrated circuit is presented. The sensor may include a first transistor having an emitter node coupled in series to a first resistor and a first current source, wherein a PTAT current flows through the first resistor, and a second transistor having a base node coupled to a base node of the first transistor, and a collector node coupled to a collector node of the first transistor, further wherein the first and second transistors are diode connected. The sensor may further include a first operational amplifier providing negative feedback to the first current source, wherein the negative feedback is related to a difference in the base-emitter voltages of the first and second transistors, and a second operational amplifier which couples the base-emitter voltage of the second transistor across a second resistor, wherein a CTAT current flows through the second resistor.

Abstract: An image divided into N pixel blocks, stored block wise in a camera core and transferred block wise from the camera core to a downstream processing engine local to the local memory. A direct handshaking is communicated, between the camera core and the downstream processing engine, in the block wise transfers. Optionally an optical sensor scanner divides the image with a scan rate N times a frame rate, each scan providing a block of the frame. Optionally, the block wise transfer includes a transfer through a local memory, local to the camera core, controlled by the direct handshaking.

Abstract: A bandgap sensor which measures temperatures within an integrated circuit is presented. The sensor may include a first transistor having an emitter node coupled in series to a first resistor and a first current source, wherein a PTAT current flows through the first resistor, and a second transistor having a base node coupled to a base node of the first transistor, and a collector node coupled to a collector node of the first transistor, further wherein the first and second transistors are diode connected. The sensor may further include a first operational amplifier providing negative feedback to the first current source, wherein the negative feedback is related to a difference in the base-emitter voltages of the first and second transistors, and a second operational amplifier which couples the base-emitter voltage of the second transistor across a second resistor, wherein a CTAT current flows through the second resistor.

Abstract: A stacked integrated circuit (IC) device includes a semiconductor IC having an active face, and an interconnect structure. The active face receives a regulated voltage from a voltage regulator (MEG). An active portion of the VREG, which supplies the regulated voltage to the semiconductor IC is coupled to the interconnect structure. A packaging substrate includes one or more inductors including a first set of through vias. The first set of through vias are coupled to the interconnect structure and cooperate with the active portion to provide the regulated voltage for the semiconductor IC. The IC also includes a printed circuit board (PCB) coupled to the packaging substrate. The PCB includes a second set of through vias coupled to the first set of through vias. The IC also includes one or more conducting paths on the PCB. The conducting path(s) couple together at least two through vias of the second set of through vias.

Abstract: A re-programmable gate logic includes a plurality of non-volatile re-configurable resistance state-based memory circuits in parallel, wherein the circuits are re-configurable to implement or change a selected gate logic, and the plurality of non-volatile re-configurable resistance state-based memory circuits are each adapted to receive a logical input signal. An evaluation switch in series with the plurality of parallel non-volatile re-configurable resistance state-based memory circuits is configured to provide an output signal based on the programmed states of the memory circuits. A sensor is configured to receive the output signal and provide a logical output signal on the basis of the output signal and a reference signal provided to the sensor. The reconfigurable logic may be implemented based on using spin torque transfer (STT) magnetic tunnel junction (MTJ) magnetoresistance random access memory (MRAM) as the re-programmable memory elements. The logic configuration is retained without power.

Abstract: A semiconductor device having an on-chip voltage regulator to control on-chip voltage regulation and methods for on-chip voltage regulation are disclosed. A semiconductor device includes a circuit positioned between a ground bus and a power bus. A power switch array is positioned between the circuit and one of the ground bus or the power bus to generate a virtual voltage across the circuit. A monitor is positioned between the ground bus and the power bus. The monitor is configured to simulate a critical path of the circuit and to output a voltage adjust signal based on an output of the simulated critical path. A controller is configured to receive the voltage adjust signal and to output a control signal to the power switch array to control the virtual voltage.

Abstract: In one particular embodiment, an integrated circuit includes a package and a substrate electrically and physically coupled to the package. The package includes a first package-substrate connection, a second package-substrate connection, and metallization coupling the first package-substrate connection to the second package-substrate connection. The substrate is coupled to the package via the first package-substrate connection and the second package-substrate connection. The substrate includes a plurality of power domains and a power control unit. The second package-substrate connection of the package is coupled to a particular power domain of the plurality of power domains. The power control unit includes logic and a switch, where the switch includes a first terminal coupled to a voltage supply terminal, a control terminal coupled to the logic, and a second terminal coupled to the first package-substrate connection of the package.