Patents by Inventor Lewis Reynolds
Lewis Reynolds has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7626542Abstract: A method and receiver are disclosed for mitigating or substantially canceling signal interference between signals detected at the receiver. Once a presumed interfering signal(s) is acquired, parameters are determined that allow the interferer(s) to be modeled. The phase invariance of the process eliminates the need to acquire the interferer's phase. An orthogonal projection (for projecting onto a detection subspace which is orthogonal to a subspace spanned by the interferer(s)) is applied to the composite of all signals (y) for thereby projecting y onto the detection subspace. The interference subspace is non-orthogonal to a representation of desired (but interfered) signal of the composite signals. With the receiver properly equipped to perform this projection operation, interfering signals, multipath, multipath-like, and structured jamming signals can be effectively diminished.Type: GrantFiled: February 23, 2006Date of Patent: December 1, 2009Assignee: Data Fusion CorporationInventors: Wolfgang Kober, Robert Kent Krumvieda, Lewis Reynolds, Steven Alan Kadlec
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Publication number: 20090141775Abstract: A method and receiver are disclosed for mitigating or substantially canceling signal interference between signals detected at the receiver. Once a presumed interfering signal(s) is acquired, parameters are determined that allow the interferer(s) to be modeled. The phase invariance of the process eliminates the need to acquire the interferer's phase. An orthogonal projection (for projecting onto a detection subspace which is orthogonal to a subspace spanned by the interferer(s)) is applied to the composite of all signals (y) for thereby projecting y onto the detection subspace. The interference subspace is non-orthogonal to a representation of desired (but interfered) signal of the composite signals. With the receiver properly equipped to perform this projection operation, interfering signals, multipath, multipath-like, and structured jamming signals can be effectively diminished.Type: ApplicationFiled: February 23, 2006Publication date: June 4, 2009Applicant: Data Fusion CorporationInventors: Wolfgang Kober, Robert Kent Krumvieda, Lewis Reynolds, Steven Alan Kadlec
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Patent number: 6895134Abstract: The invention is an optoelectronic device and method of fabrication where at least two optical devices are formed on a single semiconductor substrate, with each optical device including an active region such as a multi-quantum well region. The active devices are spatially separated and optically coupled by a passive waveguide formed over the substrate which provides butt joints with the active regions. The butt joints can be optimized independently from the active regions thus improving yield.Type: GrantFiled: November 10, 2001Date of Patent: May 17, 2005Assignee: Triquint Technology Holding Co.Inventors: Kenneth Gerard Glogovsky, Charles William Lentz, Abdallah Ougazzaden, Claude Lewis Reynolds, Jr.
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Patent number: 6862394Abstract: A method of increasing the monomolecular recombination and the immunity to noise of a continuously tunable laser is disclosed. A concentration of recombination centers in the range of about 1×1016 cm?3 to about 1×1018 cm?3 in the tuning region of the laser device is achieved by doping the waveguide layer with impurity atoms, by irradiating the waveguide layer with high energy particles or by varying the growth conditions of the waveguide layer to introduce native point defects due to lattice mismatch. This way, the monomolecular recombination is increased and the radiative recombination over low current ranges is reduced. By increasing the monomolecular recombination, the immunity to noise is improved but the tuning efficiency is reduced. Nevertheless, only a minimal effect on the tuning efficiency is noted over high current ranges and, therefore, the overall tuning range is only insignificantly changed.Type: GrantFiled: January 7, 2002Date of Patent: March 1, 2005Assignee: Triquint Technology Holding Co.Inventors: David A. Ackerman, John E. Johnson, David V. Lang, C. Lewis Reynolds, Jr.
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Publication number: 20040202402Abstract: The invention is an optoelectronic device and method of fabrication where at least two optical devices are formed on a single semiconductor substrate, with each optical device including an active region such as a multi-quantum well region. The active devices are spatially separated and optically coupled by a passive waveguide formed over the substrate which provides butt joints with the active regions. The butt joints can be optimized independently from the active regions thus improving yield.Type: ApplicationFiled: November 10, 2001Publication date: October 14, 2004Inventors: Kenneth Gerard Glogovsky, Charles William Lentz, Abdallah Ougazzaden, Claude Lewis Reynolds
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Publication number: 20030198267Abstract: The invention is a semiconductor optical device and method of fabrication where the device includes an active region with an active layer having a first index of refraction, and a blocking region having a second, lower index of refraction. A semiconductor layer having an index of refraction higher than the blocking region formed over both the active and blocking regions so that the layer is in closer proximity to the active layer in areas not covered by the blocking region so as to decrease the difference between the effective index of refraction in the active region and the effective refractive index of the blocking region. Such devices are particularly useful for pumping optical amplifiers since greater power can be achieved while maintaining single mode emission.Type: ApplicationFiled: December 20, 2000Publication date: October 23, 2003Inventors: Si Hyung Cho, William Crossley Dautremont-Smith, Sun-Yuan Huang, Charles H. Joyner, Ronald Eugene Leibenguth, Abdallah Ougazzaden, Claude Lewis Reynolds
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Patent number: 6635502Abstract: The invention is a semiconductor optical device and method of fabrication where the device includes an active region with an active layer having a first index of refraction, and a blocking region having a second, lower index of refraction. A semiconductor layer having an index of refraction higher than the blocking region is formed over both the active and blocking regions so that the semiconductor layer is in closer proximity to the active layer in areas not covered by the blocking region so as to decrease the difference between the effective index of refraction in the active region and the effective refractive index of the blocking region. Such devices are particularly useful for pumping optical amplifiers since greater power can be achieved while maintaining single mode emission.Type: GrantFiled: December 20, 2000Date of Patent: October 21, 2003Assignee: TriQuint Technology Holding Co.Inventors: Si Hyung Cho, William Crossley Dautremont-Smith, Sun-Yuan Huang, Charles H Joyner, Ronald Eugene Leibenguth, Abdallah Ougazzaden, Claude Lewis Reynolds, Jr.
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Patent number: 6614115Abstract: A method for cooling an MOVPE deposited, As-containing, P-type contact layer includes cooling the contact layer in an arsine environment to preserve the contact layer during the initial stages of the cooling process until a threshold temperature in the range of 560 to 580° C. is attained. During the cooling process, the arsine flow is reduced with respect to the arsine flow used during the MOVPE deposition. After the threshold temperature is attained, the arsine gas is withdrawn and the contact layer is cooled further. Because of the removal of the arsine gas at the threshold temperature, free carrier concentration within the contact layer is enhanced above the atomic concentration of the P-type dopant, and contact resistance is improved to a suitably low level. A semiconductor optoelectronic device is formed to include such a contact layer, the P-type dopant impurity present in an atomic concentration and the contact layer having a free carrier concentration being greater than the atomic concentration.Type: GrantFiled: July 1, 2002Date of Patent: September 2, 2003Assignee: Agere Systems Inc.Inventors: Marlin Focht, Ronald Eugene Leibenguth, Claude Lewis Reynolds
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Publication number: 20030128950Abstract: A method of increasing the monomolecular recombination and the immunity to noise of a continuously tunable laser is disclosed. A concentration of recombination centers in the range of about 1×1016 cm−3 to about 1×1018 cm−3 in the tuning region of the laser device is achieved by doping the waveguide layer with impurity atoms, by irradiating the waveguide layer with high energy particles or by varying the growth conditions of the waveguide layer to introduce native point defects due to lattice mismatch. This way, the monomolecular recombination is increased and the radiative recombination over low current ranges is reduced. By increasing the monomolecular recombination, the immunity to noise is improved but the tuning efficiency is reduced. Nevertheless, only a minimal effect on the tuning efficiency is noted over high current ranges and, therefore, the overall tuning range is only insignificantly changed.Type: ApplicationFiled: January 7, 2002Publication date: July 10, 2003Inventors: David A. Ackerman, John E. Johnson, David V. Lang, C. Lewis Reynolds
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Patent number: 6542686Abstract: The present invention provides an optoelectronic device and a method of manufacture therefor, that prevents dopant diffusion and controls the dopant concentration therein. The optoelectronic device includes an active region formed over a substrate, and an interface barrier layer and barrier layer located over the active region. The optoelectronic device further includes an upper cladding layer located over the interface barrier layer and the barrier layer. In an exemplary embodiment of the invention, the interface barrier layer is an indium phosphide interface barrier layer and the barrier layer is an indium gallium arsenide phosphide barrier layer.Type: GrantFiled: August 25, 2000Date of Patent: April 1, 2003Assignee: Lucent Technologies Inc.Inventors: Michael Geva, Claude Lewis Reynolds, Jr., Lawrence E. Smith
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Publication number: 20020175344Abstract: A method for cooling an MOVPE deposited, As-containing, P-type contact layer includes cooling the contact layer in an arsine environment to preserve the contact layer during the initial stages of the cooling process until a threshold temperature in the range of 560 to 580° C. is attained. During the cooling process, the arsine flow is reduced with respect to the arsine flow used during the MOVPE deposition. After the threshold temperature is attained, the arsine gas is withdrawn and the contact layer is cooled further. Because of the removal of the arsine gas at the threshold temperature, free carrier concentration within the contact layer is enhanced above the atomic concentration of the P-type dopant, and contact resistance is improved to a suitably low level. A semiconductor optoelectronic device is formed to include such a contact layer, the P-type dopant impurity present in an atomic concentration and the contact layer having a free carrier concentration being greater than the atomic concentration.Type: ApplicationFiled: July 1, 2002Publication date: November 28, 2002Inventors: Marlin Focht, Ronald Eugene Leibenguth, Claude Lewis Reynolds
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Patent number: 6440764Abstract: A method for cooling an MOVPE deposited, As-containing, P-type contact layer includes cooling the contact layer in an arsine environment to preserve the contact layer during the initial stages of the cooling process until a threshold temperature in the range of 560 to 580° C. is attained. During the cooling process, the arsine flow is reduced with respect to the arsine flow used during the MOVPE deposition. After the threshold temperature is attained, the arsine gas is withdrawn and the contact layer is cooled further. Because of the removal of the arsine gas at the threshold temperature, free carrier concentration within the contact layer is enhanced above the atomic concentration of the P-type dopant, and contact resistance is improved to a suitably low level.Type: GrantFiled: November 22, 2000Date of Patent: August 27, 2002Assignee: Agere Systems Guardian Corp.Inventors: Marlin Focht, Ronald Eugene Leibenguth, Claude Lewis Reynolds