Abstract: A method for contacting MOS devices. First openings in a photosensitive material are formed over a substrate having a top dielectric in a first die area and a second opening over a gate stack in a second die area having the top dielectric, a hard mask, and a gate electrode. The top dielectric layer is etched to form a semiconductor contact while etching at least a portion the hard mask layer thickness over a gate contact area exposed by the second opening. An inter-layer dielectric (ILD) is deposited. A photosensitive material is patterned to generate a third opening in the photosensitive material over the semiconductor contact and a fourth opening inside the gate contact area. The ILD is etched through to reopen the semiconductor contact while etching through the ILD and residual hard mask if present to provide a gate contact to the gate electrode.

Abstract: A method for contacting MOS devices. First openings in a photosensitive material are formed over a substrate having a top dielectric in a first die area and a second opening over a gate stack in a second die area having the top dielectric, a hard mask, and a gate electrode. The top dielectric layer is etched to form a semiconductor contact while etching at least a portion the hard mask layer thickness over a gate contact area exposed by the second opening. An inter-layer dielectric (ILD) is deposited. A photosensitive material is patterned to generate a third opening in the photosensitive material over the semiconductor contact and a fourth opening inside the gate contact area. The ILD is etched through to reopen the semiconductor contact while etching through the ILD and residual hard mask if present to provide a gate contact to the gate electrode.

Abstract: A method for contacting MOS devices. First openings in a photosensitive material are formed over a substrate having a top dielectric in a first die area and a second opening over a gate stack in a second die area having the top dielectric, a hard mask, and a gate electrode. The top dielectric layer is etched to form a semiconductor contact while etching at least a portion the hard mask layer thickness over a gate contact area exposed by the second opening. An inter-layer dielectric (ILD) is deposited. A photosensitive material is patterned to generate a third opening in the photosensitive material over the semiconductor contact and a fourth opening inside the gate contact area. The ILD is etched through to reopen the semiconductor contact while etching through the ILD and residual hard mask if present to provide a gate contact to the gate electrode.

Abstract: A method for contacting MOS devices. First openings in a photosensitive material are formed over a substrate having a top dielectric in a first die area and a second opening over a gate stack in a second die area having the top dielectric, a hard mask, and a gate electrode. The top dielectric layer is etched to form a semiconductor contact while etching at least a portion the hard mask layer thickness over a gate contact area exposed by the second opening. An inter-layer dielectric (ILD) is deposited. A photosensitive material is patterned to generate a third opening in the photosensitive material over the semiconductor contact and a fourth opening inside the gate contact area. The ILD is etched through to reopen the semiconductor contact while etching through the ILD and residual hard mask if present to provide a gate contact to the gate electrode.