Abstract: Semiconductor structures and methods of forming the same are provided. A semiconductor structure according to one embodiment includes first nanostructures, a first gate structure wrapping around each of the first nanostructures and disposed over an isolation structure, and a backside gate contact disposed below the first nanostructures and adjacent to the isolation structure. A bottom surface of the first gate structure is in direct contact with the backside gate contact.

Abstract: A breathable and waterproof non-woven fabric is manufactured by a manufacturing method including the following steps. Performing a kneading process on 87 to 91 parts by weight of a polyester, 5 to 7 parts by weight of a water repellent, and 3 to 6 parts by weight of a flow promoter to form a mixture, in which the polyester has a melt index between 350 g/10 min and 1310 g/10 min at a temperature of 270° C., and the mixture has a melt index between 530 g/10 min and 1540 g/10 min at a temperature of 270° C. Performing a melt-blowing process on the mixture, such that the flow promoter is volatilized and a melt-blown fiber is formed, in which the melt-blown fiber has a fiber body and the water repellent disposed on the fiber body with a particle size (D90) between 350 nm and 450 nm.

Abstract: A breathable and waterproof non-woven fabric is manufactured by a manufacturing method including the following steps. Performing a kneading process on 87 to 91 parts by weight of a polyester, 5 to 7 parts by weight of a water repellent, and 3 to 6 parts by weight of a flow promoter to form a mixture, in which the polyester has a melt index between 350 g/10 min and 1310 g/10 min at a temperature of 270° C., and the mixture has a melt index between 530 g/10 min and 1540 g/10 min at a temperature of 270° C. Performing a melt-blowing process on the mixture, such that the flow promoter is volatilized and a melt-blown fiber is formed, in which the melt-blown fiber has a fiber body and the water repellent disposed on the fiber body with a particle size (D90) between 350 nm and 450 nm.

Abstract: A method of lithography process is provided. The method includes forming a conductive layer over a reticle. The method includes applying ionized particles to the reticle by a discharging device. The method includes forming a photoresist layer over a semiconductor substrate. The method includes securing the semiconductor substrate by a wafer electrostatic-clamp. The method also includes patterning the photoresist layer by emitting radiation from a radiation source via the reticle.

Abstract: A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a stack of channel structures over a base structure. The semiconductor device structure also includes a first epitaxial structure and a second epitaxial structure sandwiching the channel structures. The semiconductor device structure further includes a gate stack wrapped around each of the channel structures and a backside conductive contact connected to the second epitaxial structure. A first portion of the backside conductive contact is directly below the base structure, and a second portion of the backside conductive contact extends upwards to approach a bottom surface of the second epitaxial structure. In addition, the semiconductor device structure includes an insulating spacer between a sidewall of the base structure and the backside conductive contact.

Abstract: A virtual machine backup method, performed by a first host, includes: capturing a request to write data from a virtual machine to a hard disk image file, wherein the request includes written data and input and output location information, copying the written data to a temporary storage area, calculating a first key of the written data, storing the first key, the input and output location information into a first resource location structure, pausing an operation of the virtual machine and generating a second resource location structure according to the first resource location structure, the first key and a second key, and outputting a backup data set to a second host according to the second resource location structure, wherein the backup data set includes the second resource location structure and only one of existing data and the written data when the first key and the second key are the same.

Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: A breathable and waterproof non-woven fabric is manufactured by a manufacturing method including the following steps. Performing a kneading process on 87 to 91 parts by weight of a polyester, 5 to 7 parts by weight of a water repellent, and 3 to 6 parts by weight of a flow promoter to form a mixture, in which the polyester has a melt index between 350 g/10 min and 1310 g/10 min at a temperature of 270° C., and the mixture has a melt index between 530 g/10 min and 1540 g/10 min at a temperature of 270° C. Performing a melt-blowing process on the mixture, such that the flow promoter is volatilized and a melt-blown fiber is formed, in which the melt-blown fiber has a fiber body and the water repellent disposed on the fiber body with a particle size (D90) between 350 nm and 450 nm.

Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.

Abstract: In a method of cleaning a lithography system, during idle mode, a stream of air is directed, through a first opening, into a chamber of a wafer table of an EUV lithography system. One or more particles is extracted by the directed stream of air from surfaces of one or more wafer chucks in the chamber of the wafer table. The stream of air and the extracted one or more particle are drawn, through a second opening, out of the chamber of the wafer table.

Abstract: A method of a storage device controller includes: using an interface circuit for receiving and storing different write address information of different write command signals sent from a host device, the different write address information being out of sequence; and, using multiple processor cores to rearrange the different write address information in sequence and then write data into at least one storage zone according to the different write address information rearranged in sequence.

Abstract: A semiconductor device includes a first dielectric layer, a stack of semiconductor layers disposed over the first dielectric layer, a gate structure wrapping around each of the semiconductor layers and extending lengthwise along a direction, and a dielectric fin structure and an isolation structure disposed on opposite sides of the stack of semiconductor layers and embedded in the gate structure. The dielectric fin structure has a first width along the direction smaller than a second width of the isolation structure along the direction. The isolation structure includes a second dielectric layer extending through the gate structure and the first dielectric layer, and a third dielectric layer extending through the first dielectric layer and disposed on a bottom surface of the gate structure and a sidewall of the first dielectric layer.

Abstract: An immersion cooling system includes a pressure seal tank, an electronic apparatus, a pressure balance pipe and a relief valve. The pressure seal tank is configured to store coolant. A vapor space is formed in the pressure seal tank above the liquid level of the coolant. The electronic apparatus is completely immersed in the coolant. The pressure balance pipe has a gas collection length. The first port of the pressure balance pipe is disposed on the top surface of the pressure seal tank. The relief valve is disposed on the second port of the pressure balance pipe. The second port is farther away from the top surface of the pressure seal tank than the first port. The gas collection length of the pressure equalization tube allows the concentration of vaporized coolant at the first port to be greater than the concentration of vaporized coolant at the second port.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: A thermoelectric module including at least one PN junction device is provided. The PN junction device includes a PN junction structure, top electrodes and at least one bottom electrode. The PN junction structure includes an N-type thermoelectric element and a P-type thermoelectric element, wherein side surfaces of the N-type thermoelectric element and the P-type thermoelectric element facing each other are in contact. The top electrodes are separated from each other and respectively cover a portion of a top surface of the N-type thermoelectric element or a portion of a top surface of the P-type thermoelectric element. The bottom electrode covers a bottom surface of the N-type thermoelectric element and a bottom surface of the P-type thermoelectric element.

Abstract: A lubricant gun includes: a housing having a discharge spout and a longitudinal slide channel; a motor; a plunger disposed in the longitudinal slide channel to perform reciprocating movements; a power transmission unit driven by the motor to actuate the plunger, and including a crank connected to the plunger; a moving element movable along with the crank and the plunger to perform a cycle motion; a sensor mounted proximate to a moving path of the moving element to detect the moving element whenever the moving element moves past the sensor, and to generate a signal representative of a number of the cycle motions performed by the moving element; a processing unit connected to the sensor to produce information according to the signal generated by the sensor; and a display unit displaying the information produced by the processing unit.

Abstract: A lubricant gun includes a housing, a lubricant reservoir, a plunger, and an exhaust valve. The housing includes a discharge spout, a slide channel fluidly communicated with the discharge spout, a lubricant supply passage having a lubricant supply hole fluidly connected to the slide channel, and a gas-discharging hole fluidly communicated with the slide channel. The lubricant reservoir is connected to the housing and is fluidly communicated with the slide channel through the lubricant supply passage and the lubricant supply hole. The plunger has a pushing portion received in the slide channel for sliding reciprocatingly therein. The exhaust valve is mounted on the housing and is fluidly communicated with the gas-discharging hole.

Abstract: A process including providing a semiconductor device including a bond pad, and an under bump metallurgy overlying the bond pad. Forming a solder structure over the under bump metallurgy, and wherein the solder structure includes an outer layer including tin oxide. Producing a plasma from at least one of CF4, SF4, and H2 and exposing the solder structure to the plasma. Heating the solder structure and cooling the same to provide a solder bump on the semiconductor device.

Abstract: A method of fabricating a solder bump including the following steps. A UBM over a substrate.having an exposed pad portion is provided. The UBM being in electrical contact with the pad portion. A first patterning layer is formed over the UBM. The first patterning layer including a photosensitive material sensitive to light having a first wavelength. A second patterning layer is formed over the first patterning layer. The second patterning layer including a photosensitive material sensitive to light having a second wavelength. The first patterning layer is selectively exposed with the light having the first wavelength, leaving a first unexposed portion substantially centered over the pad portion between first exposed portions. The second patterning layer is selectively exposed with the light having the second wavelength, leaving a second unexposed portion wider than, and substantially centered over, the first unexposed portion of the exposed first patterning layer.