Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.

Abstract: A high-speed ball bearing includes an outer ring, an inner ring, a plurality of balls, and a ball retainer. The ball retainer includes a plurality of pocket holes for arranging a plurality of balls, an inner circumferential surface of each of the pocket holes have a spherical surface is coaxial to the ball. A gap between an outer circumferential surface of the ball retainer and an inner circumferential surface of the ring is defined as a first gap, and a gap between the pocket hole and the corresponding ball is defined as a second gap. The first gap and the second gap have the following relationship: W2=(W1?r?)×A.

Abstract: A high-speed ball bearing includes an outer ring, an inner ring, a plurality of balls, and a ball retainer. The ball retainer includes a plurality of pocket holes for arranging a plurality of balls, an inner circumferential surface of each of the pocket holes have a spherical surface is coaxial to the ball. A gap between an outer circumferential surface of the ball retainer and an inner circumferential surface of the ring is defined as a first gap, and a gap between the pocket hole and the corresponding ball is defined as a second gap. The first gap and the second gap have the following relationship: W2=(W1?r?)×A.

Abstract: A light-emitting diode (LED) with a bump structure on a sidewall is provided. The LED comprises a substrate, an epitaxial structure, a first conductive bump, a second conductive bump, a first extended electrode and a second extended electrode. The substrate has a top surface, a first side surface and an inclined surface between the top surface and the first side surface. The epitaxial structure is disposed on the top surface of the substrate, and comprises a N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a transparent conductive layer, a P-electrode and a N-electrode. The first extended electrode and the second extended electrode connect the P-electrode and the N-electrode, extend through the inclined surface, and are electrically connected to the first and the second conductive bumps, respectively. A mounting structure comprises said LED, a sub-mount and a connector mounting the LED onto the sub-mount.

Abstract: A light-emitting diode (LED) with a bump structure on a sidewall is provided. The LED comprises a substrate, an epitaxial structure, a first conductive bump, a second conductive bump, a first extended electrode and a second extended electrode. The substrate has a top surface, a first side surface and an inclined surface between the top surface and the first side surface. The epitaxial structure is disposed on the top surface of the substrate, and comprises a N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a transparent conductive layer, a P-electrode and a N-electrode. The first extended electrode and the second extended electrode connect the P-electrode and the N-electrode, extend through the inclined surface, and are electrically connected to the first and the second conductive bumps, respectively. A mounting structure comprises said LED, a sub-mount and a connector mounting the LED onto the sub-mount.

Abstract: The present invention is a stamp cartridge comprising a casing having a predetermined number of channels for receiving a plurality of stampers and a holder portion for holding one of the stampers. The closed side of the casing has a plurality of holes opened therein, each hole being correspondent to one of the stampers and allowing one end of each stamper to extend into one of the holes. The end surface of one end of each stamper is flush with the external surface of the closed side of the casing. Alternatively, the end of each stamper is formed as a post which not only extends into one of the holes but also protrudes beyond the same to the outside of the casing. Therefore, the stamper can be pushed out by pressing one end of the stamper moving it along the channel of the the casing.