Abstract: A method includes following steps. A photoresist-coated substrate is received to an extreme ultraviolet (EUV) tool. An EUV radiation is directed from a radiation source onto the photoresist-coated substrate, wherein the EUV radiation is generated by an excitation laser hitting a plurality of target droplets ejected from a first droplet generator. The first droplet generator is replaced with a second droplet generator at a temperature not lower than about 150° C.

Abstract: An integrated circuit is disclosed. The integrated circuit is coupled to a circuit board. The circuit board includes several signal pair channels. The integrated circuit includes several output terminals and a control circuit. The control circuit is configured to configure several output signals output to several signal pair channels by several output terminals, so that a first signal pair channel and a second signal pair channel of several signal pair channels receive and output several output signals, so that a third signal pair channel of several signal pair channels shields an interference between the first signal pair channel and the second signal pair channel. The third signal pair channel is adjacent to the first signal pair channel and the second signal pair channel, and the third signal pair channel is located between the first signal pair channel and the second signal pair channel.

Abstract: A method of lithography process is provided. The method includes forming a conductive layer over a reticle. The method includes applying ionized particles to the reticle by a discharging device. The method includes forming a photoresist layer over a semiconductor substrate. The method includes securing the semiconductor substrate by a wafer electrostatic-clamp. The method also includes patterning the photoresist layer by emitting radiation from a radiation source via the reticle.

Abstract: A semiconductor device includes: M*1st conductors in a first layer of metallization (M*1st layer) and being aligned correspondingly along different corresponding ones of alpha tracks and representing corresponding inputs of a cell region in the semiconductor device; and M*2nd conductors in a second layer of metallization (M*2nd layer) aligned correspondingly along beta tracks, and the M*2nd conductors including at least one power grid (PG) segment and one or more of an output pin or a routing segment; and each of first and second ones of the input pins having a length sufficient to accommodate at most two access points; each of the access points of the first and second input pins being aligned to a corresponding different one of first to fourth beta tracks; and the PG segment being aligned with one of the first to fourth beta tracks.

Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector mirror, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device, one or more coils for generating an inductively coupled plasma (ICP), a gas inlet for providing a source gas for the ICP, and a chamber enclosing at least the collector mirror and the rotatable debris collection device. The gas inlet and the one or more coils are configured such that the ICP is spaced apart from the collector mirror.

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

Abstract: An example method of performing memory access operations comprises: receiving a request to perform a memory access operation with respect to a set of memory cells connected to a wordline of a memory device; identifying a block family associated with the set of memory cells; determining, for each logical programming level of a plurality of logical programming levels, a corresponding default block family error avoidance (BFEA) threshold voltage offset value associated with the block family; determining a value of a data state metric associated with the set of memory cells; responsive to determining that the value of the data state metric satisfies a threshold criterion, determining, for each logical programming level of a plurality of logical programming levels, a corresponding sub-BFEA threshold voltage offset value; and performing the memory access operation by applying, for each logical programming level of the plurality of logical programming levels, a combination of the default BFEA threshold voltage value

Abstract: Certain aspects of the present disclosure provide methods and apparatus for amplifying an input signal. One example apparatus is a differential amplifier that includes a positive input node, a negative input node, a positive output node, a negative output node, a positive input transistor having a gate coupled to the positive input node and having a drain coupled to the negative output node, a negative input transistor having a gate coupled to the negative input node and having a drain coupled to the positive output node, a first common-gate amplifier having an output coupled to the negative output node, a second common-gate amplifier having an output coupled to the positive output node, a first capacitive element coupled between the negative input node and an input of the first common-gate amplifier, and a second capacitive element coupled between the positive input node and an input of the second common-gate amplifier.

Abstract: Certain aspects of the present disclosure provide methods and apparatus for amplifying an input signal. One example apparatus is a differential amplifier that includes a positive input node, a negative input node, a positive output node, a negative output node, a positive input transistor having a gate coupled to the positive input node and having a drain coupled to the negative output node, a negative input transistor having a gate coupled to the negative input node and having a drain coupled to the positive output node, a first common-gate amplifier having an output coupled to the negative output node, a second common-gate amplifier having an output coupled to the positive output node, a first capacitive element coupled between the negative input node and an input of the first common-gate amplifier, and a second capacitive element coupled between the positive input node and an input of the second common-gate amplifier.

Abstract: An apparatus is disclosed for processing a signal with a divided amplifier. In example implementations, an apparatus includes a first portion of an amplifier, a first port interface, a second port interface, and a switch matrix. The first port interface includes a first transformer; a second portion of the amplifier, which is coupled to the first transformer; and a first switch component that is coupled to at least one of the first transformer or the second portion of the amplifier. The second port interface includes a second transformer and a second switch component that is coupled to the second transformer. The switch matrix is coupled between the first switch component and the first portion of the amplifier and between the second switch component and the first portion of the amplifier. The switch matrix is also coupled between the second portion of the amplifier and the first portion of the amplifier.

Abstract: A method for measuring strokes of CPR and a system using the method are disclosed. The system includes at least one permanent magnet and stroke detecting device which has a magnetic sensor, an accelerometer, a CPR detector, a controller, a power unit, and a housing. The system can measure strokes of CPR without a detector making patients uncomfortable. Meanwhile, the system is tiny and can be used to cooperate with AED.

Abstract: An apparatus is disclosed for processing a signal with a divided amplifier. In example implementations, an apparatus includes a first portion of an amplifier, a first port interface, a second port interface, and a switch matrix. The first port interface includes a first transformer; a second portion of the amplifier, which is coupled to the first transformer; and a first switch component that is coupled to at least one of the first transformer or the second portion of the amplifier. The second port interface includes a second transformer and a second switch component that is coupled to the second transformer. The switch matrix is coupled between the first switch component and the first portion of the amplifier and between the second switch component and the first portion of the amplifier. The switch matrix is also coupled between the second portion of the amplifier and the first portion of the amplifier.

Abstract: A filter circuit may include a first path having a first complex baseband filter. The circuit may further include a second path having a second complex baseband filter. The circuit may further include a combiner coupled to an output of the first complex baseband filter and an output of the second complex baseband filter.

Abstract: A method for measuring strokes of CPR and a system using the method are disclosed. The system includes at least one permanent magnet and stroke detecting device which has a magnetic sensor, an accelerometer, a CPR detector, a controller, a power unit, and a housing. The system can measure strokes of CPR without a detector making patients uncomfortable. Meanwhile, the system is tiny and can be used to cooperate with AED.

Abstract: A low noise amplifier may include a post distortion cancellation block coupled to the low noise amplifier. The post distortion cancellation block may include a diode, and phase-shift logic. The phase-shift logic may be coupled in series with the diode.

Abstract: An N-path filter with one or more branches selectively coupled to a shared circuit node includes a first branch having a first feedback path and a second feedback path. The first feedback path includes a Miller amplifier having an input coupled to an input voltage and a first capacitor coupled to both the input voltage and an output of the Miller amplifier. The second feedback path includes a node in common with the first feedback path. The second feedback path also includes a first high pass filter coupled to the output of the Miller amplifier and a second capacitor coupled to both the first capacitor and the first high pass filter.

Abstract: Amplification with post-distortion compensation is disclosed. In an example aspect, an apparatus includes a voltage rail and a cascode amplifier. The cascode amplifier includes an amplification node, a cascode node, and a common-source node. The cascode amplifier also includes at least one cascode transistor, an input transistor, and a compensation transistor. The cascode transistor is coupled between the amplification node and the cascode node. The input transistor is coupled between the cascode node and the common-source node. The compensation transistor is coupled between the voltage rail and the cascode node.

Abstract: Amplification with post-distortion compensation is disclosed. In an example aspect, an apparatus includes a voltage rail and a cascode amplifier. The cascode amplifier includes an amplification node, a cascode node, and a common-source node. The cascode amplifier also includes at least one cascode transistor, an input transistor, and a compensation transistor. The cascode transistor is coupled between the amplification node and the cascode node. The input transistor is coupled between the cascode node and the common-source node. The compensation transistor is coupled between the voltage rail and the cascode node.

Abstract: This disclosure provides systems and apparatuses for converting a single-ended analog signal into a differential analog signal. In some implementations, a single-ended to differential signal converter may include an N-path filter to generate a 180 degree phase-shifted version of a single-ended input signal. The single-ended input signal and the 180 degree phase-shifted version of the single-ended input signal together may form a differential signal. In some implementations, the N-path filter may delay the single-ended input through a series of switched capacitors.

Abstract: An N-path filter with one or more branches selectively coupled to a shared circuit node includes a first branch having a first feedback path and a second feedback path. The first feedback path includes a Miller amplifier having an input coupled to an input voltage and a first capacitor coupled to both the input voltage and an output of the Miller amplifier. The second feedback path includes a node in common with the first feedback path. The second feedback path also includes a first high pass filter coupled to the output of the Miller amplifier and a second capacitor coupled to both the first capacitor and the first high pass filter.