Patents by Inventor Li-Chyong Chen

Li-Chyong Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10967361
    Abstract: Disclosed herein are carbon doped tin disulphide (C—SnS2) and other SnS2 composites as visible light photocatalyst for CO2 reduction to solar fuels. The in situ carbon doped SnS2 photocatalyst provide higher efficiency than the undoped pure SnS2. Also disclosed herein are methods for preparing the catalysts.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: April 6, 2021
    Assignees: ACADEMIA SINICA, NATIONAL TAIWAN UNIVERSITY
    Inventors: Kuei-Hsien Chen, Indrajit Shown, Wei-Fu Chen, Li-Chyong Chen Lin
  • Publication number: 20180280942
    Abstract: Disclosed herein are carbon doped tin disulphide (C—SnS2) and other SnS2 composites as visible light photocatalyst for CO2 reduction to solar fuels. The in situ carbon doped SnS2 photocatalyst provide higher efficiency than the undoped pure SnS2. Also disclosed herein are methods for preparing the catalysts.
    Type: Application
    Filed: March 29, 2018
    Publication date: October 4, 2018
    Inventors: Kuei-Hsien CHEN, Indrajit SHOWN, Wei-Fu CHEN, Li-Chyong CHEN LIN
  • Patent number: 10003071
    Abstract: An electrode structure is provided. The electrode structure includes a substrate, a buffer layer, and a nano-material layer. The buffer layer is disposed on the substrate. The nano-material layer is disposed on the buffer layer, wherein the structure of the nano-material layer is nanowall.
    Type: Grant
    Filed: January 29, 2016
    Date of Patent: June 19, 2018
    Assignee: National Taiwan University of Science and Technology
    Inventors: Yian Tai, Bing-Joe Hwang, Kuei-Hsien Chen, Jian-Ming Chiu, Li-Chyong Chen
  • Patent number: 9985230
    Abstract: The present invention is related to a process for reducing surface energy of a hole transport layer. The disclosed process comprises providing a hole transport layer; and providing a fluorine-containing layer directly on said hole transport layer. The configuration of said fluorine-containing layer reduces the structural disorder of an active layer and is able to recover a moisture-degraded hole transport layer, and thereby improves the performance of an electric device containing the same.
    Type: Grant
    Filed: August 12, 2015
    Date of Patent: May 29, 2018
    Assignee: ACADEMIA SINICA
    Inventors: Kuei-Hsien Chen, Hsieh-Cheng Han, Ching-Chun Chang, Li-Chyong Chen, Chan-Yi Du
  • Publication number: 20170018766
    Abstract: An electrode structure is provided. The electrode structure includes a substrate, a buffer layer, and a nano-material layer. The buffer layer is disposed on the substrate. The nano-material layer is disposed on the buffer layer, wherein the structure of the nano-material layer is nanowall.
    Type: Application
    Filed: January 29, 2016
    Publication date: January 19, 2017
    Inventors: Yian Tai, Bing-Joe Hwang, Kuei-Hsien Chen, Jian-Ming Chiu, Li-Chyong Chen
  • Publication number: 20150372247
    Abstract: The present invention is related to a process for reducing surface energy of a hole transport layer. The disclosed process comprises providing a hole transport layer; and providing a fluorine-containing layer directly on said hole transport layer. The configuration of said fluorine-containing layer reduces the structural disorder of an active layer and is able to recover a moisture-degraded hole transport layer, and thereby improves the performance of an electric device containing the same.
    Type: Application
    Filed: August 12, 2015
    Publication date: December 24, 2015
    Applicant: ACADEMIA SINICA
    Inventors: Kuei-Hsien CHEN, Hsieh-Cheng HAN, Ching-Chun CHANG, Li-Chyong CHEN, Chan-Yi DU
  • Publication number: 20140203217
    Abstract: A method for modifying a surface of a powder is provided. The method includes steps of providing a polar aprotic solvent; and mixing the polar aprotic solvent with the powder so that the polar aprotic solvent adheres to the surface of the powder.
    Type: Application
    Filed: July 18, 2013
    Publication date: July 24, 2014
    Applicant: National Taiwan University of Science and Technology
    Inventors: Bing Joe Hwang, Li-Chyong Chen, Kuei-Hsien Chen, Deniz Po Wong, Han-Ping Tseng
  • Publication number: 20130328018
    Abstract: The present invention is related to a process for reducing surface energy of a hole transport layer. The disclosed process comprises providing a hole transport layer; and providing a fluorine-containing layer directly on said hole transport layer. The configuration of said fluorine-containing layer reduces the structural disorder of an active layer and is able to recover a moisture-degraded hole transport layer, and thereby improves the performance of an electric device containing the same.
    Type: Application
    Filed: June 12, 2012
    Publication date: December 12, 2013
    Applicant: ACADEMIA SINICA
    Inventors: Kuei-Hsien Chen, Hsieh-Cheng Han, Ching-Chun Chang, Li-Chyong Chen, Chan-Yi Du
  • Publication number: 20120156424
    Abstract: A nanosheet includes a 2H—SiC layer having a first surface and a second surface, the first and second surfaces being opposed to each other; a first graphene layer formed of 1-10 graphenes being disposed on the first surface; and a second graphene layer formed of 1-10 graphenes being disposed on the second surface.
    Type: Application
    Filed: December 15, 2010
    Publication date: June 21, 2012
    Applicant: Academia Sinica
    Inventors: Kuei-hsien Chen, Ming-Shien Hu, Chun-Chiang Kuo, Li-chyong Chen
  • Patent number: 8093069
    Abstract: This invention refers to surface modification/functionalization of Nitride nanomaterials and electrochemistry and optical measurement based upon such functionalized Nitride materials. With this invention a variety of bio-molecules such as DNA, protein, and antigens can be immobilized on the surface for measurement to realize ultra-sensitive chemical- and bio-sensing applications.
    Type: Grant
    Filed: February 13, 2008
    Date of Patent: January 10, 2012
    Assignee: Academia Sinica
    Inventors: Kuei-Hsien Chen, Chin-Pei Chen, Abhijit Ganguly, Li-Chyong Chen, Ying-Chin Chang
  • Patent number: 8080824
    Abstract: A semiconductor material structure includes at least one region capable of generating electrons and holes each having an associated mean kinetic energy during operation. A material layer in proximity to the region provides an associated potential energy larger than the mean kinetic energy associated with the generated electrons and the mean kinetic energy associated with the holes.
    Type: Grant
    Filed: November 15, 2006
    Date of Patent: December 20, 2011
    Assignee: Academia Sinica
    Inventors: Kuei-Hsien Chen, Chien-Hung Lin, Chia-Wen Hsu, Li-Chyong Chen
  • Publication number: 20110076598
    Abstract: The invention provides metal-containing corrin compounds as catalysts for oxygen reduction in electrochemical devices, such as in fuel cells. The catalysts provide more efficient reduction at lower cost than conventional noble metal catalyst. Methods for preparing the catalysts are also provided.
    Type: Application
    Filed: September 30, 2009
    Publication date: March 31, 2011
    Applicant: ACADEMIA SINICA
    Inventors: Kuei-Hsien CHEN, Chen-Hao WANG, Hsin-Cheng HSU, Sun-Tang CHANG, Li-Chyong CHEN
  • Publication number: 20100279434
    Abstract: This invention refers to surface modification/functionalization of Nitride nanomaterials and electrochemistry and optical measurement based upon such functionalized Nitride materials. With this invention a variety of bio-molecules such as DNA, protein, and antigens can be immobilized on the surface for measurement to realize ultra-sensitive chemical- and bio-sensing applications.
    Type: Application
    Filed: February 13, 2008
    Publication date: November 4, 2010
    Inventors: Kuei-Hsien Chen, Chin-Pei Chen, Abhitjit Ganguly, Li-Chyong Chen, Ying-Chin Chang
  • Publication number: 20080110499
    Abstract: A semiconductor material structure includes at least one region capable of generating electrons and holes each having an associated mean kinetic energy during operation. A material layer in proximity to the region provides an associated potential energy larger than the mean kinetic energy associated with the generated electrons and the mean kinetic energy associated with the holes.
    Type: Application
    Filed: November 15, 2006
    Publication date: May 15, 2008
    Inventors: Kuei-Hsien Chen, Chien-Hung Lin, Chia-Wen Hsu, Li-Chyong Chen
  • Patent number: 6960528
    Abstract: Nanotip arrays are formed by exposing a substrate to a process gas mixture that simultaneously forms nanomasks on the substrate surface and etches exposed portions of the substrate surface to form the nanotip array. Components of the process gas mixture form nanocrystallites on the surface of the substrate, thereby masking portions of the substrate from other components of the process gas mixture, which etch exposed portions of the substrate. Accordingly, nanotip arrays formed using this technique can have nanocrytallite endpoints.
    Type: Grant
    Filed: September 20, 2002
    Date of Patent: November 1, 2005
    Assignee: Academia Sinica
    Inventors: Kuie-Hsien Chen, Jih Shang Hwang, Debajyoti Das, Hong Chun Lo, Li-Chyong Chen
  • Publication number: 20040056271
    Abstract: Nanotip arrays are formed by exposing a substrate to a process gas mixture that simultaneously forms nanomasks on the substrate surface and etches exposed portions of the substrate surface to form the nanotip array. Components of the process gas mixture form nanocrystallites on the surface of the substrate, thereby masking portions of the substrate from other components of the process gas mixture, which etch exposed portions of the substrate. Accordingly, nanotip arrays formed using this technique can have nanocrytallite endpoints.
    Type: Application
    Filed: September 20, 2002
    Publication date: March 25, 2004
    Inventors: Kuie-Hsien Chen, Jih Shang Hwang, Debajyoti Das, Hong Chun Lo, Li-Chyong Chen
  • Patent number: 6090358
    Abstract: A novel material Si.sub.X C.sub.y N.sub.z, having a crystal structure similar to that of a.Si.sub.3 N.sub.4 with carbon atoms substituting most of the Si sites, is synthesized in crystalline form onto crystalline Si substrates by microwave plasma enhanced decomposition of carbon, silicon and nitrogen containing gasses.
    Type: Grant
    Filed: August 20, 1997
    Date of Patent: July 18, 2000
    Assignee: National Science Council of Republic of China
    Inventors: Li-Chyong Chen, Kuei-Hsien Chen, Dhananjay Manohar Bhusari, Chun-Ku Chen
  • Patent number: 5935705
    Abstract: The present invention provides a novel crystalline material Si.sub.x C.sub.y N.sub.z possessing a direct optical band gap of 3.8 eV. Many optoelectronic applications, such as blue light emitting diode and laser diode, may utilize this property.
    Type: Grant
    Filed: October 15, 1997
    Date of Patent: August 10, 1999
    Assignee: National Science Council of Republic of China
    Inventors: Li-Chyong Chen, Kuei-Hsien Chen, Dhananjay Manohar Bhusari, Yang-Fang Chen, Ying-Sheng Huang
  • Patent number: 5320882
    Abstract: A single step method of forming a composite of ductile niobium particles within a matrix of brittle niobium aluminum is taught. The method involves completely ablating the end of a rod of a niobium aluminum intermetallic with a laser beam to form a plume of vaporous and particulate material and depositing the ablated material on a receiving surface disposed proximate the rod end being ablated. A surface composite structure is formed in a single step and has ductile particles within a brittle matrix.
    Type: Grant
    Filed: April 22, 1992
    Date of Patent: June 14, 1994
    Assignee: General Electric Company
    Inventor: Li-Chyong Chen
  • Patent number: 5284614
    Abstract: Doped tungsten powder, or sintered tungsten bodies formed therefrom, having a fine dispersion of oxide particles of at least one metal from the group zirconium, hafnium, lanthanum, yttrium, and rare earth's are formed by the method of this invention. A mixture of a salt solution comprised of a soluble salt of the metal, and a tungsten blue oxide powder is formed. A hydroxide precipitating solution is admixed with the mixture to form a hydroxide precipitate of the metal on the tungsten blue oxide powder. The tungsten blue oxide powder and hydroxide precipitate are heated in a reducing atmosphere to form the tungsten powder having the dispersion of oxide particles. The doped tungsten powder can be consolidated and sintered to form tungsten bodies having a fine dispersion of the metal oxide.
    Type: Grant
    Filed: June 1, 1992
    Date of Patent: February 8, 1994
    Assignee: General Electric Company
    Inventors: Li-Chyong Chen, Stephen L. Dole, Ronald H. Arendt