Patents by Inventor Li-Hsing Huang

Li-Hsing Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240178309
    Abstract: A semiconductor device includes a high electron mobility transistor (HEMT) disposed in an annular active element region, and a resistor disposed in a passive element region surrounded by the annular active element region. The HEM includes a first portion of a compound semiconductor barrier layer stacked on a first portion of a compound semiconductor channel layer. A source electrode, a gate electrode, and a drain electrode are disposed on the first portion of the compound semiconductor barrier layer. The resistor includes a second portion of the compound semiconductor barrier layer stacked on a second portion of the compound semiconductor channel layer. An input terminal electrode is disposed on the second portion of the compound semiconductor barrier layer and located at the center of the passive element region.
    Type: Application
    Filed: November 29, 2022
    Publication date: May 30, 2024
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Li-Fan Chen, Shao-Chang Huang, Jian-Hsing Lee
  • Publication number: 20240168371
    Abstract: Disclosed is a method of manufacturing a semiconductor device. The method includes forming a patterned hardmask over an underlying target layer on a substrate; and performing plasma fabrication operations in parallel on the patterned hardmask and underlying target layer in a plasma etching chamber using a plasma etch gas and a selective source gas. The plasma operations include forming a protective cap on the patterned hardmask; and removing portions of the underlying layer that are not covered by the patterned hardmask. In various embodiments, the selective source gas includes a chemical compound that includes a halogen gas that can be dissociated into a metal and a halogen, and the plasma operations include dissociating the metal and the halogen in the selective source gas and forming a protective cap on the patterned hardmask using the metal that has been dissociated.
    Type: Application
    Filed: February 7, 2023
    Publication date: May 23, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuan-Da Huang, Chun-Fu Kuo, Yi Hsing Yu, Li-Te Lin
  • Publication number: 20050243819
    Abstract: An internet phone system and a peer to peer communication method are described. The internet phone system includes a first area DNS, a first area server, a second area server and an upper layer server. When a user calls the individual number of a second internet phone, the first area server looks up the IP address of the second internet phone, through the DNS system, according to the individual number and of the second internet phone and establishes a peer to peer communication between the first internet phone and the second internet phone. When a user calls the internet phone number of the third internet phone, the second area server looks up the IP address of the third internet phone, through the DNS system, according to the individual number of the third internet phone, and establishes a peer to peer communication between the first internet phone and the third internet phone.
    Type: Application
    Filed: September 9, 2004
    Publication date: November 3, 2005
    Inventors: Chin-Lung Peng, Li-Hsing Huang, Cheng-Hsien Ku