Patents by Inventor Li-Hsun Ho
Li-Hsun Ho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9988264Abstract: A method of fabricating an integrated structure for MEMS device and semiconductor device comprises steps of: providing a substrate having a transistor thereon in a semiconductor device region and a first MEMS component thereon in a MEMS region; performing a interconnect process on the substrate in the semiconductor device region to form a plurality of first dielectric layers, at least a conductive plug and at least a conductive layer in the first dielectric layers; forming a plurality of second dielectric layers and an etch stopping device in the second dielectric layers on the substrate in a etch stopping device region; forming a plurality of third dielectric layers and at least a second MEMS component in the third dielectric layers on the substrate in the MEMS region; and performing an etching process to remove the third dielectric layers in the MEMS region.Type: GrantFiled: September 18, 2014Date of Patent: June 5, 2018Assignee: UNITED MICROELECTRONICS CORP.Inventors: Bang-Chiang Lan, Li-Hsun Ho, Wei-Cheng Wu, Hui-Min Wu, Min Chen, Tzung-I Su, Chien-Hsin Huang
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Patent number: 9783408Abstract: A structure of micro-electro-mechanical systems (MEMS) electroacoustic transducer is disclosed. The MEMS electroacoustic transducer includes a substrate having a MEMS device region, a diaphragm having openings and disposed in the MEMS device region, a silicon material layer disposed on the diaphragm and sealing the diaphragm, and a conductive pattern disposed beneath the diaphragm in the MEMS device region. Preferably, a first cavity is also formed between the diaphragm and the substrate.Type: GrantFiled: June 18, 2014Date of Patent: October 10, 2017Assignee: UNITED MICROELECTRONICS CORP.Inventors: Bang-Chiang Lan, Ming-I Wang, Li-Hsun Ho, Hui-Min Wu, Min Chen, Chien-Hsin Huang
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Publication number: 20150004732Abstract: A method of fabricating an integrated structure for MEMS device and semiconductor device comprises steps of: providing a substrate having a transistor thereon in a semiconductor device region and a first MEMS component thereon in a MEMS region; performing a interconnect process on the substrate in the semiconductor device region to form a plurality of first dielectric layers, at least a conductive plug and at least a conductive layer in the first dielectric layers; forming a plurality of second dielectric layers and an etch stopping device in the second dielectric layers on the substrate in a etch stopping device region; forming a plurality of third dielectric layers and at least a second MEMS component in the third dielectric layers on the substrate in the MEMS region; and performing an etching process to remove the third dielectric layers in the MEMS region.Type: ApplicationFiled: September 18, 2014Publication date: January 1, 2015Inventors: Bang-Chiang Lan, Li-Hsun Ho, Wei-Cheng Wu, Hui-Min Wu, Min Chen, Tzung-I Su, Chien-Hsin Huang
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Patent number: 8872287Abstract: The present invention relates to an integrated structure for a MEMS device and a semiconductor device and a method of fabricating the same, in which an etch stopping element is included on a substrate between the MEMS device and the semiconductor device for protecting the semiconductor device from lateral damage when an oxide releasing process is performed to fabricate the MEMS device. The etch stopping element has various profiles and is selectively formed by an individual fabricating process or is simultaneously formed with the semiconductor device in the same fabricating process. It is a singular structure or a combined stacked multilayered structure, for example, a plurality of rows of pillared etch-resistant material plugs, one or a plurality of wall-shaped etch-resistant material plugs, or a multilayered structure of a stack of which and an etch-resistant material layer.Type: GrantFiled: March 27, 2008Date of Patent: October 28, 2014Assignee: United Microelectronics Corp.Inventors: Bang-Chiang Lan, Li-Hsun Ho, Wei-Cheng Wu, Hui-Min Wu, Min Chen, Tzung-I Su, Chien-Hsin Huang
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Publication number: 20140291787Abstract: A structure of micro-electro-mechanical systems (MEMS) electroacoustic transducer is disclosed. The MEMS electroacoustic transducer includes a substrate having a MEMS device region, a diaphragm having openings and disposed in the MEMS device region, a silicon material layer disposed on the diaphragm and sealing the diaphragm, and a conductive pattern disposed beneath the diaphragm in the MEMS device region. Preferably, a first cavity is also formed between the diaphragm and the substrate.Type: ApplicationFiled: June 18, 2014Publication date: October 2, 2014Inventors: Bang-Chiang Lan, Ming-I Wang, Li-Hsun Ho, Hui-Min Wu, Min Chen, Chien-Hsin Huang
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Patent number: 8798291Abstract: A structure of a micro-electro-mechanical systems (MEMS) electroacoustic transducer includes a substrate, a diaphragm, a silicon material layer, and a conductive pattern. The substrate includes an MEMS device region. The diaphragm has openings, and is disposed in the MEMS device region. A first cavity is formed between the diaphragm and the substrate. The silicon material layer is disposed on the diaphragm and seals the diaphragm. The conductive pattern is disposed beneath the diaphragm in the MEMS device region.Type: GrantFiled: September 19, 2008Date of Patent: August 5, 2014Assignee: United Microelectronics Corp.Inventors: Bang-Chiang Lan, Ming-I Wang, Li-Hsun Ho, Hui-Min Wu, Min Chen, Chien-Hsin Huang
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Publication number: 20120205045Abstract: A semiconductor machine and a cleaning process are provided. The semiconductor machine includes a chamber and a cleaning module. The cleaning process includes the following steps. Firstly, the semiconductor machine is used to perform a semiconductor manufacturing process, wherein a titanium-based material is etched in the semiconductor manufacturing process. Then, a cleaning task is activated to clean the semiconductor machine by using a cleaning agent including a gas mixture of a fluoride compound and oxygen.Type: ApplicationFiled: February 11, 2011Publication date: August 16, 2012Applicant: UNITED MICROELECTRONICS CORP.Inventors: Li-Hsun HO, Ching-Shing Huang, Chih-Hui Shen, Tao-Min Chang
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Patent number: 8096048Abstract: A method for fabricating a MEMS is described as follows. A substrate is provided, including a circuit region and a MEMS region separated from each other. A first metal interconnection structure is formed on the substrate in the circuit region, and simultaneously a first dielectric structure is formed on the substrate in the MEMS region. A second metal interconnection structure is formed on the first metal interconnection structure, and simultaneously a second dielectric structure, at least two metal layers and at least one protection ring are formed on the first dielectric structure. The metal layers and the protection ring are formed in the second dielectric structure and the protection ring connects two adjacent metal layers to define an enclosed space between two adjacent metal layers. The first dielectric structure and the second dielectric structure outside the enclosed space are removed to form a MEMS device in the MEMS region.Type: GrantFiled: August 3, 2010Date of Patent: January 17, 2012Assignee: United Microelectronics Corp.Inventors: Bang-Chiang Lan, Ming-I Wang, Li-Hsun Ho, Hui-Min Wu, Min Chen, Chien-Hsin Huang, Tzung-I Su
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Patent number: 7898081Abstract: A MEMS device includes a vent hole structure and a MEMS structure disposed on a same side of a substrate. The vent hole structure adjoins the MEMS structure with an etch stop structure therebetween. The MEMS structure includes a chamber, the vent hole structure includes a metal layer having at least a hole thereon as a vent hole to connect the chamber of the MEMS structure through the etch stop structure. Accordingly, the MEMS device has a lateral vent hole. Furthermore, as the vent hole structure and the MEMS structure are disposed on the same side of the substrate, the manufacturing process is convenient and timesaving.Type: GrantFiled: July 3, 2008Date of Patent: March 1, 2011Assignee: United Microelectronics Corp.Inventors: Bang-Chiang Lan, Li-Hsun Ho, Wei-Cheng Wu, Hui-Min Wu, Min Chen, Chien-Hsin Huang, Ming-I Wang
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Publication number: 20100317138Abstract: A method for fabricating a MEMS is described as follows. A substrate is provided, including a circuit region and an MEMS region separated from each other. A first metal interconnection structure is formed on the substrate in the circuit region, and simultaneously a first dielectric structure is formed on the substrate in the MEMS region. A second metal interconnection structure is formed on the first metal interconnection structure, and simultaneously a second dielectric structure, at least two metal layers and at least one protection ring are formed on the first dielectric structure. The metal layers and the protection ring are formed in the second dielectric structure and the protection ring connects two adjacent metal layers to define an enclosed space between two adjacent metal layers. The first dielectric structure and the second dielectric structure outside the enclosed space are removed to form an MEMS device in the MEMS region.Type: ApplicationFiled: August 3, 2010Publication date: December 16, 2010Applicant: UNITED MICROELECTRONICS CORP.Inventors: Bang-Chiang Lan, Ming-I Wang, Li-Hsun Ho, Hui-Min Wu, Min Chen, Chien-Hsin Huang, Tzung-I Su
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Patent number: 7851975Abstract: A microelectromechanical system (MEMS) structure and a fabricating method thereof are described. The MEMS structure includes a fixed part and a movable part. The fixed part is disposed on and connects with a substrate. The movable part including at least two first metal layers, a first protection ring and a first dielectric layer is suspended on the substrate. The first protection ring connects two adjacent first metal layers, so as to define a first enclosed space between the two adjacent first metal layers. The first dielectric layer is disposed in the enclosed space and connects the two adjacent first metal layers.Type: GrantFiled: September 2, 2008Date of Patent: December 14, 2010Assignee: United Microelectronics Corp.Inventors: Bang-Chiang Lan, Ming-I Wang, Li-Hsun Ho, Hui-Min Wu, Min Chen, Chien-Hsin Huang, Tzung-I Su
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Publication number: 20100074458Abstract: A structure of a micro-electro-mechanical systems (MEMS) electroacoustic transducer includes a substrate, a diaphragm, a silicon material layer, and a conductive pattern. The substrate includes an MEMS device region. The diaphragm has openings, and is disposed in the MEMS device region. A first cavity is formed between the diaphragm and the substrate. The silicon material layer is disposed on the diaphragm and seals the diaphragm. The conductive pattern is disposed beneath the diaphragm in the MEMS device region.Type: ApplicationFiled: September 19, 2008Publication date: March 25, 2010Applicant: United Microelectronics Corp.Inventors: Bang-Chiang Lan, Ming-I Wang, Li-Hsun Ho, Hui-Min Wu, Min Chen, Chien-Hsin Huang
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Publication number: 20100052179Abstract: A microelectromechanical system (MEMS) structure and a fabricating method thereof are described. The MEMS structure includes a fixed part and a movable part. The fixed part is disposed on and connects with a substrate. The movable part including at least two first metal layers, a first protection ring and a first dielectric layer is suspended on the substrate. The first protection ring connects two adjacent first metal layers, so as to define a first enclosed space between the two adjacent first metal layers. The first dielectric layer is disposed in the enclosed space and connects the two adjacent first metal layers.Type: ApplicationFiled: September 2, 2008Publication date: March 4, 2010Applicant: UNITED MICROELECTRONICS CORP.Inventors: Bang-Chiang Lan, Ming-I Wang, Li-Hsun Ho, Hui-Min Wu, Min Chen, Chien-Hsin Huang, Tzung-I Su
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Publication number: 20100002894Abstract: A MEMS device includes a vent hole structure and a MEMS structure disposed on a same side of a substrate. The vent hole structure adjoins the MEMS structure with an etch stop structure therebetween. The MEMS structure includes a chamber, the vent hole structure includes a metal layer having at least a hole thereon as a vent hole to connect the chamber of the MEMS structure through the etch stop structure. Accordingly, the MEMS device has a lateral vent hole. Furthermore, as the vent hole structure and the MEMS structure are disposed on the same side of the substrate, the manufacturing process is convenient and timesaving.Type: ApplicationFiled: July 3, 2008Publication date: January 7, 2010Inventors: Bang-Chiang Lan, Li-Hsun Ho, Wei-Cheng Wu, Hui-Min Wu, Min Chen, Chien-Hsin Huang, Ming-I Wang
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Publication number: 20090243004Abstract: The present invention relates to an integrated structure for a MEMS device and a semiconductor device and a method of fabricating the same, in which an etch stopping device is included on a substrate between the MEMS device and the semiconductor device for protecting the semiconductor device from lateral damage when an oxide releasing process is performed to fabricate the MEMS device. The etch stopping device has various profiles and is selectively formed by an individual fabricating process or is simultaneously formed with the semiconductor device in the same fabricating process. It is a singular structure or a combined stacked multilayered structure, for example, a plurality of rows of pillared etch-resistant material plugs, one or a plurality of wall-shaped etch-resistant material plugs, or a multilayered structure of a stack of which and an etch-resistant material layer.Type: ApplicationFiled: March 27, 2008Publication date: October 1, 2009Inventors: Bang-Chiang Lan, Li-Hsun Ho, Wei-Cheng Wu, Hui-Min Wu, Min Chen, Tzung-I Su, Chien-Hsin Huang