Abstract: A substrate having buried address lines and a first dielectric layer is provided. A conductive electrode is formed in the first conductive layer. A top portion of the conductive electrode is exposed. A second dielectric layer is deposited on surface of the exposed top portion. The second dielectric layer defines a recess around the top portion. A third dielectric layer is deposited over the second dielectric layer. A portion of the third dielectric layer and a portion of the second dielectric layer are removed, thereby exposing a top surface of the top portion of the conductive electrode. The top portion of the conductive electrode is salicidized to form a heating stem. The remaining third dielectric layer is selectively removed from the recess. A phase-change material layer covers the heating stem and the second dielectric layer. The phase-change material layer is etched, thereby forming a phase-change storage cap.

Abstract: A phase-change memory cell structure includes a bottom diode on a substrate; a heating stem on the bottom diode; a first dielectric layer surrounding the heating stem, wherein the first dielectric layer forms a recess around the heating stem; a phase-change storage cap capping the heating stem and the first dielectric layer; and a second dielectric layer covering the first dielectric layer and the phase-change storage cap wherein the second dielectric layer defines an air gap in the recess.

Abstract: A substrate having buried address lines and a first dielectric layer is provided. A conductive electrode is formed in the first conductive layer. A top portion of the conductive electrode is exposed. A second dielectric layer is deposited on surface of the exposed top portion. The second dielectric layer defines a recess around the top portion. A third dielectric layer is deposited over the second dielectric layer. A portion of the third dielectric layer and a portion of the second dielectric layer are removed, thereby exposing a top surface of the top portion of the conductive electrode. The top portion of the conductive electrode is salicidized to form a heating stem. The remaining third dielectric layer is selectively removed from the recess. A phase-change material layer covers the heating stem and the second dielectric layer. The phase-change material layer is etched, thereby forming a phase-change storage cap.

Abstract: A phase-change memory cell structure includes a bottom diode on a substrate; a heating stem on the bottom diode; a first dielectric layer surrounding the heating stem, wherein the first dielectric layer forms a recess around the heating stem; a phase-change storage cap capping the heating stem and the first dielectric layer; and a second dielectric layer covering the first dielectric layer and the phase-change storage cap wherein the second dielectric layer defines an air gap in the recess.

Abstract: A phase change memory device is provided, including a semiconductor substrate with a first conductive semiconductor layer disposed thereover, wherein the first conductive semiconductor layer has a first conductivity type. A first dielectric layer is disposed over the semiconductor substrate. A second conductive semiconductor layer having a second conductivity type opposite to the first conductivity type is disposed in the first dielectric layer. A heating electrode is disposed in the first dielectric layer and formed over the second conductive semiconductor layer, wherein the heating electrode has a tapered cross section and includes metal silicide. A second dielectric layer is disposed over the first dielectric layer. A phase change material layer is disposed in the second dielectric layer. An electrode is disposed over the second dielectric layer, covering the phase change material layer.

Abstract: Phase change memory devices and methods for fabricating the same are provided. A phase change memory device includes a first conductive electrode disposed in a first dielectric layer. A second dielectric layer is disposed over the first dielectric layer. A phase change material layer is disposed in the second dielectric layer and electrically connected to the first conductive electrode. A space is disposed in the second dielectric layer to at least isolate a sidewall of the phase change material layer and the second dielectric layer adjacent thereto. A second conductive electrode is disposed in the second dielectric layer and electrically connected to the phase change material layer.

Abstract: Phase change memory devices and methods for fabricating the same are provided. A phase change memory device includes a first conductive electrode disposed in a first dielectric layer. A second dielectric layer is disposed over the first dielectric layer. A phase change material layer is disposed in the second dielectric layer and electrically connected to the first conductive electrode. A space is disposed in the second dielectric layer to at least isolate a sidewall of the phase change material layer and the second dielectric layer adjacent thereto. A second conductive electrode is disposed in the second dielectric layer and electrically connected to the phase change material layer.

Abstract: An exemplary memory device includes a first dielectric layer with a first conductive contact therein. A phase change material (PCM) is disposed on top of the first dielectric layer and provided with an insulating layer integrally on a top surface of the PCM. A first electrode is disposed over the first dielectric layer and covered a portion of the first conductive contact and the insulating layer in a first direction, contacting to the first conductive contact and a first side of the PCM. A second electrode is disposed over the first dielectric layer and covered a portion of the insulating layer in a second direction, contacting to a second side of the PCM. A second dielectric layer is disposed over the first dielectric layer to cover the first electrode, the second electrode, the insulating layer and the PCM, including a second conductive contact connected to the second electrode.