Abstract: A plasma apparatus including a chamber, an electrode set and a gas supplying tube set is provided. The chamber has a supporting table. The gas supplying tube set is disposed in the chamber and located between the supporting table and the electrode set. The gas supplying tube set includes at least one outer gas supplying tube and at least one first inner gas supplying tube. The first inner gas supplying tube is telescoped within the outer gas supplying tube. The outer gas supplying tube and the first inner gas supplying tube both have a plurality of gas apertures, and an amount of the gas apertures of the outer gas supplying tube is greater than an amount of the gas apertures of the first inner gas supplying tube.

Abstract: An embodiment of the invention provides a compound barrier layer, including: a first barrier layer disposed on a substrate; and a second barrier layer disposed on the first barrier layer, wherein the first barrier layer and second barrier layer both include a plurality of alternately arranged inorganic material regions and organo-silicon material regions and the inorganic material regions and the organo-silicon material regions of the first barrier layer and second barrier layer are alternatively stacked vertically.

Abstract: An evaporation apparatus proposed includes a gas storage chamber, a first evaporator, a pressure gauge, a pyrolysis chamber and a deposition chamber. The first evaporator is connected with the gas storage chamber through a first pipe and the first pipe has a first valve. The pressure gauge is connected with the gas storage chamber through a second pipe. The pyrolysis chamber is connected with the gas storage chamber through a third pipe and the third pipe has a second valve, wherein the first evaporator is connected with the pyrolysis chamber through the gas storage chamber, and the gas storage chamber is disposed between the first evaporator and the pyrolysis chamber. The deposition chamber is connected with the pyrolysis chamber through a fourth pipe.

Abstract: A power-saving controlling method includes steps as follows. An electrical information is captured from an electrical equipment by an intelligent socket device. The electrical information is calculated and a rule table is generated. An automatic controlling signal is generated according to the rule table. The intelligent socket device is switched off or switched on according to the automatic controlling signal.

Abstract: A method of forming an organic film is provided and includes followings. An apparatus is provided and includes a gas storage chamber, an evaporator, a pressure gauge, a pyrolysis chamber connected with the gas storage chamber, and a deposition chamber. The evaporator connects with the pyrolysis chamber through the gas storage. An organic material in the evaporator is evaporated to form organic gas, wherein the organic gas is passed into the gas storage chamber. When pressure of the organic gas in the gas storage chamber, measured by the pressure gauge, reaches a predetermined value, a valve between the evaporator and the gas storage chamber is turned off and another valve is turned on for passing the organic gas into the pyrolysis chamber. The organic gas is pyrolyzed in the pyrolysis chamber to form a monomer. The monomer is delivered to the deposition chamber for deposition to form an organic film.

Abstract: A light-emitting diode (LED) element is provided. The LED element includes a substrate, a diode structure layer and several light-guide structures. The light-guide structures are formed on at least one of the substrate and the diode structure layer. Each light-guide structure has an inner sidewall, and several spiral slits formed on the inner side wall.

Abstract: An evaporation apparatus proposed includes a gas storage chamber, a first evaporator, a pressure gauge, a pyrolysis chamber and a deposition chamber. The first evaporator is connected with the gas storage chamber through a first pipe and the first pipe has a first valve. The pressure gauge is connected with the gas storage chamber through a second pipe. The pyrolysis chamber is connected with the gas storage chamber through a third pipe and the third pipe has a second valve. The deposition chamber is connected with the pyrolysis chamber through a fourth pipe.

Abstract: An optical lens for modulating light generated by a surface-emitting laser chip is disclosed. The optical lens includes a main body with a recess. A bottom surface of the recess is configured with a light-entering curved face, and an outer surface of the main body opposite to the bottom surface is configured with a light-existing curved face. Here, the recess is for accommodating the surface-emitting laser chip, and the surface-emitting laser chip is arranged a distance from the light-entering curved face. A light-emitting module adopting the aforementioned optical lens is also provided. The aforementioned optical lens would cause the incident light to first diverge and then converge at a predetermined angle, so that the output illuminating light is more uniform and the projecting distance is extended.

Abstract: The invention provides a flexible base material and a flexible electronic device. The flexible base material includes a flexible substrate having a first surface and a second surface opposite to the first surface. A first organic composite barrier layer is deposited on the first surface of the flexible substrate, wherein the first organic composite barrier layer applies a first stress to the flexible substrate. An anti-curved layer is deposited on the second surface of the flexible substrate, wherein the anti-curved layer applies a second stress, which is cancelled off more than 90% of the first stress, to the flexible substrate.

Abstract: A semiconductor device includes a ZnO thin film. The semiconductor device comprises a substrate and a ZnO thin film. The ZnO thin film includes at least two zones with different carrier types. The current invention also discloses a manufacturing method of a semiconductor device having ZnO thin film. A ZnO thin film doped with dopant is deposited on a substrate. Thereafter, a laser irradiates on the ZnO thin film to activate the dopant in the irradiated zone of the ZnO thin film to change the carrier type.

Abstract: A multi-junction group III-V compound semiconductor solar cell and fabrication method thereof forms a 2D photonic crystal structure in the topmost window layer of the stacked solar cell units by etching holes in the window layer. The 2D photonic crystal structure causes omni-directional reflection of the sunlight along any transverse plane of the 2D photonic crystal structure and directs the oblique sunlight to enter the bottom surface of the holes, thereby increasing the amount of incident light. By applying the property that the 2D photonic crystal structure causes a wider range of wavelengths to have higher transmission efficiency at the window layer to the multi-junction group III-V compound semiconductor solar cell, energy conversion efficiency may be effectively increased.

Abstract: A method for fabricating a III-V compound semiconductor solar cell includes forming a window layer made of III-V compound material over a top surface of an solar cell structure; forming a periodic array of hole textures of the window layer by using a lithography and etching process; and depositing an anti-reflection coating film to cover the window layer. A III-V compound solar cell structure is also provided to enhance the conversion efficiency of photovoltaic.

Abstract: A photovoltaic structure is provided with an added layer inserted between an emitter layer and a window layer. The added layer includes all elements which are same or different both in the emitter layer and the window layer. The addition of the added layer enhances converted current and voltage that improves the conversion efficiency when the structure is applied to a solar cell.

Abstract: A monolithic photo-chip with a solar device and a light-emitting device that can be manufactured by utilizing a method of selective area growth (SAG) is provided, which has the advantages of simple structure, compactness and cost-effectiveness. Moreover, a solar-powered illuminator including the monolithic photo-chip and a rechargeable battery is provided, which has the advantages of small size, compactness, simple integration, easy installation and cost-effectiveness. Accordingly, the solar-powered illuminator is very suitable for versatile application fields, such as the LD application field including a laser pointer, a laser sight, a laser aiming device, a laser level and a laser measuring tool, etc; or the LED application field including a decoration lamp, a courtyard lamp, a garden lamp and a advertisement lamp, a streetlamp, a warning sign and a indication sign for the road application, etc.

Abstract: A cascade solar cell structure includes an amorphous silicon-based solar cell on a non-silicon solar cell to be configured for an anti-reflective surface and absorbing incident light with short wavelength.

Abstract: A solar-powered illuminator, which includes an integrated light receiving and emitting device having a solar chip and a LED chip, a rechargeable battery and an Application-Specific Integrated Circuit (ASIC), is provided. A transparent encapsulant of the integrated light receiving and emitting device focuses the incident sunlight on the solar chip to generate a first voltage. The rechargeable battery is electrically connected to the integrated light receiving and emitting device and is charged by the solar chip in the first voltage. The ASIC is electrically connected to the rechargeable battery and the light receiving and emitting device, and it steps up the first voltage into a second voltage and drives the LED chip to emit light via the discharge of the rechargeable battery in the second voltage. Consequently, the solar-powered illuminator has the advantages of small size, compactness, simple integration, easy installation and cost-effectiveness.

Abstract: The invention relates to a solar energy system with spherical lens. The solar energy system comprises: a spherical lens and a solar energy plate. The spherical lens has a first surface and a second surface. The first surface is used for receiving incident light from a light source at any location. The second surface is used for transmitting concentrated light caused by the incident light to a predetermined region. The solar energy plate is mounted on the predetermined region, and is used for receiving the concentrated light and generating electrical energy. According to the invention, the spherical lens can receive the incident light from any location and transmit the concentrated light to the same predetermined region. The solar energy plate on the predetermined region can always receive the concentrated light from the spherical lens. Therefore, the efficiency of the solar energy system of the invention is high.

Abstract: The present invention discloses a high-efficiency light-focusing package structure for a solar chip, which includes: a solar-chip sustaining substrate, a pair of positive-electrode and negative-electrode lead frames, and a covering. The covering may focus sunlight and also has an anti-reflective function to promote sunlight absorption. Further, the package structure for a solar chip of the present invention is low-cost and can be designed and assembled according to the size and shape required by a user.

Abstract: The invention relates to a vertical cavity surface emitting laser and method for fabricating the same. The vertical cavity surface emitting laser of the invention comprises: a substrate, a first reflector, an active layer, a second reflector, a first electrode layer and a second electrode layer. The second reflector has a first confinement layer with a first aperture and a second confinement layer with a second aperture. The second aperture is smaller than the first aperture. According to the invention, because the second confinement layer is formed by implanting oxygen ion into the second reflector and heating to let the oxygen ion and Al content in the second reflector react to form an oxide layer, the second confinement layer can be used as an optical and electronic confinement layer. Therefore, the width and depth of the second confinement layer can be achieved precisely and easily.