Abstract: A method and an apparatus for cooling a semiconductor device. The method comprises the steps of contacting a surface of the semiconductor device with respective end portions of an array of contact elements thermally coupled to a cooling fluid, and disposing a flexible, heat conductive sheet between the respective end portions of the contact elements and the surface of the semiconductor device for transferring heat generated in the semiconductor device to the cooling fluid via the sheet and the contact elements.

Abstract: A method and an apparatus for cooling a semiconductor device. The method comprises the steps of contacting a surface of the semiconductor device with respective end portions of an array of contact elements thermally coupled to a cooling fluid, and disposing a flexible, heat conductive sheet between the respective end portions of the contact elements and the surface of the semiconductor device for transferring heat generated in the semiconductor device to the cooling fluid via the sheet and the contact elements.

Abstract: An apparatus and method for cooling a semiconductor device. The apparatus comprises a chamber configured for receiving a cooling fluid; and a plurality of contact elements comprising respective first ends disposed within the chamber; wherein, during operation, respective second ends of contact elements contact a surface of the semiconductor device for transferring heat generated in the semiconductor device to the cooling fluid.

Abstract: A wafer stage and a method of supporting a wafer for inspection. the wafer stage comprises a platform for supporting a wafer such that a backside of the wafer is suspended above a cavity of the platform; and a support structure disposed substantially within the cavity for supporting a portion of the wafer; wherein the wafer stage is adapted for relative movement of the platform with respect to the support structure for alignment of the wafer with respect to a probe.

Abstract: A wafer stage and a method of supporting a wafer for inspection. the wafer stage comprises a platform for supporting a wafer such that a backside of the wafer is suspended above a cavity of the platform; and a support structure disposed substantially within the cavity for supporting a portion of the wafer; wherein the wafer stage is adapted for relative movement of the platform with respect to the support structure for alignment of the wafer with respect to a probe.

Abstract: A method and system for measuring laser induced phenomena changes of at least one of a resistance, a capacitance and an inductance in a semiconductor device. The method comprises applying a biasing voltage from an emitter-follower circuit to a device under test (DUT); inducing said changes in the DUT; and measuring a voltage change in a collector portion of the emitter-follower circuit as a measure for said changes.

Abstract: An apparatus and method for cooling a semiconductor device. The apparatus comprises a chamber configured for receiving a cooling fluid; and a plurality of contact elements comprising respective first ends disposed within the chamber; wherein, during operation, respective second ends of contact elements contact a surface of the semiconductor device for transferring heat generated in the semiconductor device to the cooling fluid.

Abstract: A solid immersion lens optics assembly, a test station for probing and testing of integrated circuits on a semiconductor wafer, and a method of landing a SIL on an object. The optics assembly comprises an objective lens housing for receiving an objective lens, and a solid immersion lens (SIL) housing for mounting an SIL and adapted for connection to the objective lens housing; wherein a peripheral wall of the SIL housing comprises an integrated spring section adapted to provide a biased support for the SIL.

Abstract: A solid immersion lens optics assembly, a test station for probing and testing of integrated circuits on a semiconductor wafer, and a method of landing a SIL on an object. The optics assembly comprises an objective lens housing for receiving an objective lens, and a solid immersion lens (SIL) housing for mounting an SIL and adapted for connection to the objective lens housing; wherein a peripheral wall of the SIL housing comprises an integrated spring section adapted to provide a biased support for the SIL.

Abstract: A wafer stage and a method of supporting a wafer for inspection. the wafer stage comprises a platform for supporting a wafer such that a backside of the wafer is suspended above a cavity of the platform; and a support structure disposed substantially within the cavity for supporting a portion of the wafer; wherein the wafer stage is adapted for relative movement of the platform with respect to the support structure for alignment of the wafer with respect to a probe.

Abstract: A method and system for measuring laser induced phenomena changes of at least one of a resistance, a capacitance and an inductance in a semiconductor device. The method comprises applying a biasing voltage from an emitter-follower circuit to a device under test (DUT); inducing said changes in the DUT; and measuring a voltage change in a collector portion of the emitter-follower circuit as a measure for said changes.

Abstract: A method of testing an electronic circuit is provided. The method comprises radiating a laser beam onto the electronic circuit, and determining a plurality of samples of a response signal output by the electronic circuit during the period when the laser beam is radiated. The method further comprises accumulating the plurality of samples to generate a value, and generating a test result based on the value.

Abstract: A method and system for measuring laser induced phenomena changes of at least one of a resistance, a capacitance and an inductance in a semiconductor device. The method comprises interconnecting an electrical bridge circuit across the semiconductor device, the semiconductor device being connected as one of at least four circuit elements of the bridge circuit; inducing the changes in the semiconductor; and monitoring a balance condition of the bridge circuit.

Abstract: Apparatus for and methods of inspection using laser beam induced alteration are provided. In one aspect, an apparatus is provided that includes a laser scanning microscope for directing a laser beam at a circuit structure and a source for biasing and thereby establishing a power condition in the circuit structure. A detection circuit is provided for detecting a change in the power condition in response to illumination of the circuit structure by the laser beam and generating a first output signal based on the detected change. A signal processor is provided for processing the first output signal and generating a second output signal based thereon. A control system is operable to scan the laser beam according to a pattern that has a plurality of pixel locations, whereby the laser beam may be moved to a given pixel location and allowed to dwell there for a selected time before being moved to another pixel location.