Abstract: A method of exposing a wafer to a high-tilt angle ion beam and an apparatus for performing the same are disclosed. In an embodiment, a method includes forming a patterned mask layer over a wafer, the patterned mask layer including a patterned mask feature; exposing the wafer to an ion beam, a surface of the wafer being tilted at a tilt angle with respect to the ion beam; and moving the wafer along a scan line with respect to the ion beam, a scan angle being defined between the scan line and an axis perpendicular to an axis of the ion beam, a difference between the tilt angle and the scan angle being less than 50°.

Abstract: A heating device is provided. The heating device is installed on a camera device, and includes a thermal sleeve, a thermally conductive elastomer and a heating sheet. The thermal sleeve has an inner-wall surface and an outer-wall surface. The thermally conductive elastomer is configured on the inner-wall surface of the thermal sleeve. The heating sheet is configured on the outer-wall surface of the thermal sleeve. The heat generated by the heating sheet can be transferred to the lens of the camera through the thermal sleeve and the thermally conductive elastomer to defog and defrost the lens.

Abstract: A heating device is provided. The heating device is installed on a camera device, and includes a thermal sleeve, a thermally conductive elastomer and a heating sheet. The thermal sleeve has an inner-wall surface and an outer-wall surface. The thermally conductive elastomer is configured on the inner-wall surface of the thermal sleeve. The heating sheet is configured on the outer-wall surface of the thermal sleeve. The heat generated by the heating sheet can be transferred to the lens of the camera through the thermal sleeve and the thermally conductive elastomer to defog and defrost the lens.