Abstract: A measurement system for taking a reading in a test zone on a surface of a substrate. A chamber forms an environment, a surface treatment station dispenses a stabilizing chemical in the test zone, a charge deposition station deposits a charge in the test zone, and a QV measurement station takes a QV based measurement in the test zone. Where the surface treatment station, the charge deposition station, and the QV measurement station all interact with the substrate within the chamber. In this manner, reliable QV measurements are taken on the substrate by controlling charge spreading with the stabilizing chemical. QV measurement stability is also improved by reducing the influence of the time trending on substrates with reactive dielectrics, such as on silicon oxynitride and high-k surfaces.

Abstract: A method for measuring a characteristic of a substrate, including directing an incident beam at an inspection grid of points on the substrate, receiving the reflected beam with a position sensitive detector, measuring the displacement of the reflected beam from its expected location, compiling a database of the displacement measurements, examining the database for effects of a pattern induced anomaly in the displacement measurements, producing an adjusted database, and deriving the characteristic of the substrate from the adjusted database. Thus, pattern induced errors from the displacement measurements are corrected. In this manner, problems with interpreting the reflection angles of a beam in substrate stress analysis equipment are overcome where distortions in the reflection angles are caused by deposition patterns on the substrates.

Abstract: Methods and systems for preparing a sample for thin film analysis are provided. One system includes an energy beam source configured to generate an energy beam. The system also includes an energy beam delivery subsystem configured to direct the energy beam to a sample and to modify the energy beam such that the energy beam has a substantially flat-top profile on the sample. The energy beam removes a portion of a contaminant layer on the sample to expose an analysis area of a thin film on the sample. One method includes generating an energy beam and modifying the energy beam such that the energy beam has a substantially flat-top profile. The method also includes directing the energy beam to a sample. The energy beam removes a portion of a contaminant layer on the sample to expose an analysis area of a thin film on the sample.

Abstract: A plasma processing apparatus and a method of operating a plasma processing apparatus are disclosed. In one embodiment, a first RF signal at a carrier frequency and a second RF signal at a second frequency are generated. An amplitude modulated signal is formed by modulating the first RF signal with the second RF signal. A plasma is generated within the plasma processing chamber using the amplitude modulated signal. Generating plasma using a frequency modulated signal is also disclosed.

Abstract: In at least one embodiment, the invention is a temperature sensor having a temperature sensitive material positioned within a shell. The shell has a first section and a second section, which are attached together by a non-adhesive bond. The non-adhesive bond being an atomic bond, such as a diffusion bond. The temperature sensitive material is capable of emitting a radiation signal which varies in its magnitude and character as the material's temperature changes. The shell allows transmission of the radiation signal through the shell to an external processor. Analysis of the emitted radiation signal by the processor can provide a temperature measurement. The temperature sensitive material is a phosphorescent, such as a phosphor. The shell may be made of a material which can be diffusion bonded, such materials include a silicon comprising material, a glass, a plastic, a sapphire and a quartz.

Abstract: In at least one embodiment, the invention is a temperature sensor having a temperature sensitive material positioned within a shell. The shell has a first section and a second section, which are attached together by a non-adhesive bond. The non-adhesive bond being an atomic bond, such as a diffusion bond. The temperature sensitive material is capable of emitting a radiation signal which varies in its magnitude and character as the material's temperature changes. The shell allows transmission of the radiation signal through the shell to an external processor. Analysis of the emitted radiation signal by the processor can provide a temperature measurement. The temperature sensitive material is a phosphorescent, such as a phosphor. The shell may be made of a material which can be diffusion bonded, such materials include a silicon comprising material, a glass, a plastic, a sapphire and a quartz.

Abstract: A multi-gas sensor is provided which modulates a polarized light beam over a broadband of wavelengths between two alternating orthogonal polarization components. The two orthogonal polarization components of the polarization modulated beam are directed along two distinct optical paths. At least one optical path contains one or more spectral discrimination means, with each spectral discrimination means having spectral absorption features of one or more gases of interest being measured. The two optical paths then intersect, and one orthogonal component of the intersected components is transmitted and the other orthogonal component is reflected. The combined polarization modulated beam is partitioned into one or more smaller spectral regions of interest where one or more gases of interest has an absorption band.

Abstract: A conduit has a heating system disposed therein. The heating system generates heat in response to magnetic flux generated by an inductive coil. The heating system has a heat transfer element and a plurality of ferromagnetic elements. The heat transfer element may be displaced within the conduit to control the amount of heat generated.

Abstract: A process chamber 110 capable of processing a substrate 30 in a plasma of process gas. The chamber 110 comprises a support 200 having a dielectric 210 covering an electrode 220 and a conductor 230 below the electrode 220. A voltage supply 180 supplies a gas energizing voltage to the conductor 220, and the conductor is adapted to capacitively couple the voltage to the electrode 220 to energize the process gas. Alternatively, the voltage may be supplied to the electrode 220 through a connector 195 which can capacitively couple with the conductor 230. A DC power supply 190 may also provide an electrostatic chucking voltage to the electrode 220. In one version, the conductor 230 comprises an interposer 280.

Abstract: Apparatus for measuring wafer support assembly temperature in a semiconductor wafer processing system. The apparatus is a modular plug that is mounted to the support assembly. The plug contains a photoluminescent material that exhibits a decay in luminescence after an excitement which is indicative of the temperature of the support assembly.

Abstract: A process chamber 110 capable of processing a substrate 50 in a plasma comprises a dielectric 210 covering a first electrode 220 and a second electrode 230, a conductor 250 supporting the dielectric 210, and a voltage supply 170 to supply an RF voltage to the first electrode 220 or the second electrode 230 in the dielectric 210. The first electrode 220 capacitively couples with a process electrode 225 to energize process gas in the process chamber 110 and RF voltage applied to the second electrode 230 is capacitively coupled to the conductor 250 and through a collar 260 or the second electrode 230 is directly capacitively coupled through the collar 260.

Abstract: A plasma processing apparatus and a method of operating a plasma processing apparatus are disclosed. In one embodiment, a first RF signal at a carrier frequency and a second RF signal at a second frequency are generated. An amplitude modulated signal is formed by modulating the first RF signal with the second RF signal. A plasma is generated within the plasma processing chamber using the amplitude modulated signal. Generating plasma using a frequency modulated signal is also disclosed.

Abstract: A conduit has a heating system disposed therein. The heating system generates heat in response to magnetic flux generated by an inductive coil. The heating system comprises a transfer element and a plurality of ferromagnetic elements. The heat transfer element may be displaced within the conduit to control the amount of heat generated.

Abstract: A semiconductor wafer chuck for retaining a semiconductor wafer during semiconductor wafer processing in a semiconductor wafer processing system including a connector connecting DC chucking voltage and RF biasing power to an electrode embedded in the body of the chuck. The connector for the chuck includes two or more members joined by resilient banana connections. The connector may be adapted for use as a high temperature connector for an electrostatic chuck operated at an elevated temperature and such connector includes a thermal impedance for reducing the heat transferred from the chuck to the bottom of the connector.

Abstract: An electrostatic chuck 20 for holding a substrate 25 in a process chamber 30 comprises an electrostatic member 115 comprising a polymer 120 covering an electrode 125, the polymer 120 having a receiving surface 135 for receiving the substrate 25. A heater 130 abutting the polymer 120 is provided to heat the substrate 25 during processing of the substrate 25. The heater 130 has a resistance that is sufficiently low to heat the substrate 25 without causing excessive thermal degradation of the polymer 120.

Abstract: A multi-gas sensor is provided which modulates a polarized light beam over a broadband of wavelengths between two alternating orthogonal polarization components. The two orthogonal polarization components of the polarization modulated beam are directed along two distinct optical paths. At least one optical path contains one or more spectral discrimination element, with each spectral discrimination element having spectral absorption features of one or more gases of interest being measured. The two optical paths then intersect, and one orthogonal component of the intersected components is transmitted and the other orthogonal component is reflected. The combined polarization modulated beam is partitioned into one or more smaller spectral regions of interest where one or more gases of interest has an absorption band.

Abstract: A high speed, metal-semiconductor-metal photodetector includes a pair of generally circular, electrically conductive electrodes formed on an optically active semiconductor layer. Various embodiments of the invention include a spiral, intercoiled electrode geometry and an electrode geometry having substantially circular, concentric electrodes which are interposed. These electrode geometries result in photodetectors with lower capacitances, dark currents and lower inductance which reduces the ringing seen in the optical pulse response.

Abstract: A non-mechanical optical switch is provided for alternately switching a monochromatic or quasi-monochromatic light beam along two optical paths. A polarizer polarizes light into a single, e.g., vertical component which is then rapidly modulated into vertical and horizontal components by a polarization modulator. A polarization beam splitter then reflects one of these components along one path and transmits the other along the second path. In the specific application of gas filter correlation radiometry, one path is directed through a vacuum cell and one path is directed through a gas correlation cell containing a desired gas. Reflecting mirrors cause these two paths to intersect at a second polarization beam splitter which reflects one component and transmits the other to recombine them into a polarization modulated beam which can be detected by an appropriate single sensor.