Patents by Inventor Liang Huang
Liang Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11945885Abstract: A vinyl-containing copolymer is copolymerized from (a) first compound, (b) second compound, and (c) third compound. (a) First compound is an aromatic compound having a single vinyl group. (b) Second compound is polybutadiene or polybutadiene-styrene having side vinyl groups. (c) Third compound is an acrylate compound. The vinyl-containing copolymer includes 0.003 mol/g to 0.010 mol/g of benzene ring, 0.0005 mol/g to 0.008 mol/g of vinyl group, and 1.2*10?5 mol/g to 2.4*10?4 mol/g of ester group.Type: GrantFiled: December 29, 2022Date of Patent: April 2, 2024Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Cheng-Po Kuo, Shin-Liang Kuo, Shu-Chuan Huang, Yan-Ting Jiang, Jian-Yi Hang, Wen-Sheng Chang
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Patent number: 11945528Abstract: A hip joint mechanism includes: a hip joint frame; an upper leg movably connected to the hip joint frame; a hip actuator configured to drive the hip joint frame to rotate; two upper leg actuators mounted on the hip joint frame; two transmission mechanisms configured to transmit motion from the two upper leg actuators to the upper leg, wherein each of the upper leg actuators comprises a casing connected to the hip joint frame, and an output shaft connected to one corresponding transmission mechanism, each of the two transmission mechanisms comprises an output end; and three connecting mechanisms, wherein the output ends and the hip joint frame are movably connected to the upper leg through the three connecting mechanisms, the three connecting mechanisms are arranged at three vertices of a triangle.Type: GrantFiled: December 24, 2020Date of Patent: April 2, 2024Assignee: UBTECH ROBOTICS CORP LTDInventors: Liang Huang, Hongyu Ding, Youjun Xiong
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Patent number: 11948954Abstract: An electrode controls transmittance of a blocking layer over a photodiode of a pixel sensor (e.g., a photodiode of a small pixel detector) by changing oxidation of a metal material included in the blocking layer. By using the electrode to adjust transmittance of the blocking layer, pixel sensors for different uses and/or products may be produced using a single manufacturing process. As a result, power and processing resources are conserved that otherwise would have been expended in switching manufacturing processes. Additionally, production time is decreased (e.g., by eliminating downtime that would otherwise have been used to reconfigure fabrication machines.Type: GrantFiled: January 10, 2023Date of Patent: April 2, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Li-Wen Huang, Chung-Liang Cheng, Ping-Hao Lin, Kuo-Cheng Lee
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Patent number: 11946802Abstract: An ambient light sensor includes a substrate, a metasurface disposed on the substrate, and an aperture layer disposed on the substrate. The metasurface includes a plurality of nanostructures and a filling layer laterally surrounding the plurality of nanostructures. The aperture layer laterally separates the metasurface into a plurality of sub-meta groups.Type: GrantFiled: March 29, 2023Date of Patent: April 2, 2024Assignee: VISERA TECHNOLOGIES COMPANY LIMITEDInventors: Shih-Liang Ku, Zi-Han Liao, Chun-Wei Huang
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Publication number: 20240103879Abstract: Block data load with transpose techniques are described. In one example, an input is received, at a control unit, specifying an instruction to load a block of data to at least one memory module using a transpose operation. Responsive to the receiving the input by the control unit, the block of data is caused to be loaded to the at least one memory module by transposing the block of data to form a transposed block of data and storing the transposed block of data in the at least one memory.Type: ApplicationFiled: September 25, 2022Publication date: March 28, 2024Applicant: Advanced Micro Devices, Inc.Inventors: Bin He, Michael John Mantor, Brian Emberling, Liang Huang, Chao Liu
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Publication number: 20240105550Abstract: A device includes an integrated circuit die attached to a substrate; a lid attached to the integrated circuit die; a sealant on the lid; a spacer structure attached to the substrate adjacent the integrated circuit die; and a cooling cover attached to the spacer structure, wherein the cooling cover extends over the lid, wherein the cooling cover attached to the lid by the sealant. In an embodiment, the device includes a ring structure on the substrate, wherein the ring structure is between the spacer structure and the integrated circuit die.Type: ApplicationFiled: January 10, 2023Publication date: March 28, 2024Inventors: Tung-Liang Shao, Yu-Sheng Huang, Hung-Yi Kuo, Chen-Hua Yu
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Patent number: 11941411Abstract: Embodiments of this disclosure provide a method for starting an application and a related apparatus. The method includes the following: A user terminal may acquire a configuration parameter of a target application from a data management server when a start instruction for the target application is detected. The configuration parameter includes plugin configuration information and code package configuration information. The target application can be executed by using a target code package and a locally cached target plugin.Type: GrantFiled: March 30, 2022Date of Patent: March 26, 2024Assignee: Tencent Technology (Shenzhen) Company LimitedInventors: Lingbo Cai, Liang Ma, Qingjie Lin, Hongzheng Ke, Yue Hu, Canhui Huang, Yuyang Peng, Deming Zhang
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Patent number: 11942433Abstract: In an embodiment, a structure includes: a first integrated circuit die including first die connectors; a first dielectric layer on the first die connectors; first conductive vias extending through the first dielectric layer, the first conductive vias connected to a first subset of the first die connectors; a second integrated circuit die bonded to a second subset of the first die connectors with first reflowable connectors; a first encapsulant surrounding the second integrated circuit die and the first conductive vias, the first encapsulant and the first integrated circuit die being laterally coterminous; second conductive vias adjacent the first integrated circuit die; a second encapsulant surrounding the second conductive vias, the first encapsulant, and the first integrated circuit die; and a first redistribution structure including first redistribution lines, the first redistribution lines connected to the first conductive vias and the second conductive vias.Type: GrantFiled: January 17, 2022Date of Patent: March 26, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Hua Yu, Jen-Fu Liu, Ming Hung Tseng, Tsung-Hsien Chiang, Yen-Liang Lin, Tzu-Sung Huang
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Patent number: 11937932Abstract: An acute kidney injury predicting system and a method thereof are proposed. A processor reads the data to be tested, the detection data, the machine learning algorithm and the risk probability comparison table from a main memory. The processor trains the detection data according to the machine learning algorithm to generate an acute kidney injury prediction model, and inputs the data to be tested into the acute kidney injury prediction model to generate an acute kidney injury characteristic risk probability and a data sequence table. The data sequence table lists the data to be tested in sequence according to a proportion of each of the data to be tested in the acute kidney injury characteristics. The processor selects one of the medical treatment data from the risk probability comparison table according to the acute kidney injury characteristic risk probability.Type: GrantFiled: July 8, 2022Date of Patent: March 26, 2024Assignees: TAICHUNG VETERANS GENERAL HOSPITAL, TUNGHAI UNIVERSITYInventors: Chieh-Liang Wu, Chun-Te Huang, Cheng-Hsu Chen, Tsai-Jung Wang, Kai-Chih Pai, Chun-Ming Lai, Min-Shian Wang, Ruey-Kai Sheu, Lun-Chi Chen, Yan-Nan Lin, Chien-Lun Liao, Ta-Chun Hung, Chien-Chung Huang, Chia-Tien Hsu, Shang-Feng Tsai
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Publication number: 20240094638Abstract: An optimization method for a mask pattern optical transfer includes steps as follows: First, a projection optical simulation is performed to obtain an optimal pupil configuration scheme corresponding to a virtual mask pattern. Next, a position scanning is performed to change the optimal pupil configuration scheme, so as to generate a plurality of adjusted pupil configuration schemes. A mask pattern transfer simulation is performed to obtain a plurality of pupil configuration schemes-critical dimension relationship data corresponding to the virtual mask pattern. Subsequently, an actual pupil configuration scheme suitable for an actual mask pattern is selected according to the plurality of pupil configuration schemes-critical dimension relationship data, and upon which an actual mask pattern transfer is performed.Type: ApplicationFiled: November 9, 2022Publication date: March 21, 2024Inventors: Chun-Yi CHANG, Wen-Liang HUANG
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Publication number: 20240096800Abstract: A semiconductor device includes first and second active regions extending in parallel in a substrate, a plurality of conductive patterns, each conductive pattern of the plurality of conductive patterns extending on the substrate across each of the first and second active regions, and a plurality of metal lines, each metal line of the plurality of metal lines overlying and extending across each of the first and second active regions. Each conductive pattern of the plurality of conductive patterns is electrically connected in parallel with each metal line of the plurality of metal lines.Type: ApplicationFiled: November 27, 2023Publication date: March 21, 2024Inventors: Fei Fan DUAN, Fong-yuan CHANG, Chi-Yu LU, Po-Hsiang HUANG, Chih-Liang CHEN
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Publication number: 20240096707Abstract: A method includes forming a gate stack, which includes a first portion over a portion of a first semiconductor fin, a second portion over a portion of a second semiconductor fin, and a third portion connecting the first portion to the second portion. An anisotropic etching is performed on the third portion of the gate stack to form an opening between the first portion and the second portion. A footing portion of the third portion remains after the anisotropic etching. The method further includes performing an isotropic etching to remove a metal gate portion of the footing portion, and filling the opening with a dielectric material.Type: ApplicationFiled: November 28, 2023Publication date: March 21, 2024Inventors: Ming-Chi Huang, Kuo-Bin Huang, Ying-Liang Chuang, Ming-Hsi Yeh
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Publication number: 20240096609Abstract: The physical vapor deposition tool includes a magnet component, a single cathode, and a power circuit for biasing a pedestal that supports a semiconductor substrate. During a deposition operation that deposits an inert metal material, the physical vapor deposition tool may modulate an electromagnetic field emanating from the magnet component that includes spiral-shaped bands having different ranges of magnetic strength. The physical vapor deposition tool may have an increased throughput relative to a physical vapor deposition tool without the magnet component, the single cathode, and the power circuit. Additionally, or alternatively, the inert metal material may have a grain size that is greater relative to a grain size of an inert metal material deposited using the physical vapor deposition tool without the magnet component, the single cathode, and the power circuit.Type: ApplicationFiled: January 31, 2023Publication date: March 21, 2024Inventors: Yen-Liang LIN, Yu-Kang HUANG, Yu-Chuan TAI
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Patent number: 11935947Abstract: An enhancement mode high electron mobility transistor (HEMT) includes a group III-V semiconductor body, a group III-V barrier layer and a gate structure. The group III-V barrier layer is disposed on the group III-V semiconductor body, and the gate structure is a stacked structure disposed on the group III-V barrier layer. The gate structure includes a gate dielectric and a group III-V gate layer disposed on the gate dielectric, and the thickness of the gate dielectric is between 15 nm to 25 nm.Type: GrantFiled: October 8, 2019Date of Patent: March 19, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chih-Tung Yeh, Chun-Ming Chang, Bo-Rong Chen, Shin-Chuan Huang, Wen-Jung Liao, Chun-Liang Hou
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Patent number: 11935804Abstract: In an embodiment, a device includes: an integrated circuit die; an encapsulant at least partially surrounding the integrated circuit die, the encapsulant including fillers having an average diameter; a through via extending through the encapsulant, the through via having a lower portion of a constant width and an upper portion of a continuously decreasing width, a thickness of the upper portion being greater than the average diameter of the fillers; and a redistribution structure including: a dielectric layer on the through via, the encapsulant, and the integrated circuit die; and a metallization pattern having a via portion extending through the dielectric layer and a line portion extending along the dielectric layer, the metallization pattern being electrically coupled to the through via and the integrated circuit die.Type: GrantFiled: April 10, 2023Date of Patent: March 19, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tzu-Sung Huang, Ming Hung Tseng, Yen-Liang Lin, Hao-Yi Tsai, Chi-Ming Tsai, Chung-Shi Liu, Chih-Wei Lin, Ming-Che Ho
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Patent number: 11933928Abstract: An irregular seismic data collection method is based on forward modeling. The method includes: fully collecting geological information of a work area to build a geological model, determining arrangement parameters of receiver points and shot points for regular high-density collection and irregular sparse collection, performing irregular optimization design on positions of the shot points based on forward modeling, performing irregular optimization design on positions of the receiver points based on forward modeling, and outputting a preferred irregular sparse observation system.Type: GrantFiled: March 23, 2023Date of Patent: March 19, 2024Assignee: Institute of Geology and Geophysics, Chinese Academy of SciencesInventors: Shengqiang Mu, Shoudong Huo, Guoxu Shu, Xuhui Zhou, Jiaru Zou, Liang Huang
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Publication number: 20240084370Abstract: The disclosure provides a kit for detecting microsatellite instability and a method therefor. The kit includes a negative control, a plurality of qPCR reaction solutions, a qPCR premix and a sterile enzyme-free water; the plurality of qPCR reaction solutions includes 6 pairs of upstream primers and downstream primers of which the MSI mutation site is amplified, and a reference probe for the internal reference and a detection probe for the mutation site. The difference between the amplification of the gene and the gene at the mutation site of the samples and the negative control is used to detect the microsatellite instability. The method and kit as provided is easy and simple without the need of normal tissues being a control, and the need to open the cap. By doing so, aerosol pollution is avoided and sample supplies are conserved.Type: ApplicationFiled: January 18, 2023Publication date: March 14, 2024Inventors: Chun MENG, Jing HONG, Liang GUO, Wenxiao MA, Yiwei HUANG, Xiaodie LIN, Liling XIE, Xiaoya WANG, Qixin LIN
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Publication number: 20240086625Abstract: An information processing method and apparatus, a terminal, and a storage medium. The information processing method comprises: determining first content in response to a first operation event of a first control in a first document (S11); and adding the first content to the first document on the basis of content information and type information of the first content (S12). The type information comprises first type information and/or second type information, the second type information having an association with the first type information. In the described method, first content can be added to a first document according to content information and type information of the first content, so as to distinguish different ways of adding the first content.Type: ApplicationFiled: November 16, 2023Publication date: March 14, 2024Inventors: Lu ZHANG, Wenzong MA, Xinlei GUO, Xiaolin FANG, Hao HUANG, Liang CHEN, Lanjin ZHOU, Linghui ZHOU, Yingtao LIU, Dirun HUANG, Xuebing ZENG, Zejian LIN, Yingjie YOU, Yunzhao TONG, Yuxiang CHEN, Jiawei CHEN
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Publication number: 20240087890Abstract: A method includes depositing a photoresist layer over a target layer, the photoresist layer comprising an organometallic material; exposing the photoresist layer to an extreme ultraviolet (EUV) radiation; developing the exposed photoresist layer to form a photoresist pattern; forming a spacer on a sidewall of the photoresist pattern; removing the photoresist pattern; after removing the photoresist pattern, patterning the target layer through the spacer.Type: ApplicationFiled: August 26, 2022Publication date: March 14, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yu-Lien HUANG, Chih-Cheng LIU, Tze-Liang LEE
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Publication number: 20240088195Abstract: An image sensor device includes a semiconductor substrate, a radiation sensing member, a shallow trench isolation, and a color filter layer. The radiation sensing member is in the semiconductor substrate. An interface between the radiation sensing member and the semiconductor substrate includes a direct band gap material. The shallow trench isolation is in the semiconductor substrate and surrounds the radiation sensing member. The color filter layer covers the radiation sensing member.Type: ApplicationFiled: November 16, 2023Publication date: March 14, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Yu WEI, Yen-Liang LIN, Kuo-Cheng LEE, Hsun-Ying HUANG, Hsin-Chi CHEN