Abstract: An amorphous upconversion phosphor comprising barium fluoride a combination of rare-earth fluorides including yttrium and lanthanum and dopants, and a waveguide thereof on a substrate selected to have a refractive index lower than a thin film of the phosphor material or any other substrate with an appropriate buffer layer of lower refractive index that the film wherein infrared radiation and visible light are convened to ultraviolet and visible light The amorphous upconversion phosphor is deposited at temperatures low enough to permit integration into semiconductor materials.

Abstract: A highly oriented thin film of specific barium fluoride materials deposited at low temperatures are useful as Upconversion waveguides.

Abstract: A multilayer structure has an a nonlinear optical film epitaxially grown on an underlying buffer layer of substantially lower refractive index. The buffer layer itself is epitaxially grown on a single crystal substrate with an intermediate epitaxial electrode.

Abstract: A multilayer structure is disclosed which includes a single crystal semiconductor substrate. On the substrate is an epitaxial buffer layer, and on the buffer is an epitaxial fluoride outer layer exhibiting upconversion excitation upon red or infrared irradiation.

Abstract: A multilayer structure comprising in order: an oriented single crystal substrate, an epitaxial buffer layer, an epitaxial metal electrode, and an epitaxial metal oxide upper layer deposited on the metal electrode. The substrate is a semiconductor selected from the group consisting of Si compounds, Ge compounds, and compounds having at least one element selected from the group consisting of Al, Ga, and In and at least one element selected from the group consisting of N, P, As, and Sb.

Abstract: A multilayer waveguide having an optical film of LiN.sub.b Ta.sub.1-x O.sub.3 formed on the surface of a buffer layer or substrate of material having a nearly identical lattice structure and substantially low refractive index.

Abstract: A multilayer structure comprising in order: a (111)-oriented single crystal substrate and an epitaxial metal oxide buffer layer. The substrate is doped or undoped. The substrate is a semiconductor selected from the group consisting of Si compounds, Ge compounds, and compounds having at least one element selected from the group consisting of Al, Ga, and In and at least one element selected from the group consisting of N, P, As, and Sb. The substrate defines a substrate superlattice dimension equal to 3 times a sublattice constant of the substrate. The epitaxial metal oxide buffer layer has a three-fold rotation symmetry about the substrate (111) direction. The buffer layer defines a buffer layer superlattice dimension equal to 4 times the oxygen-to-oxygen lattice spacing of the buffer layer. The buffer layer superlattice dimension is within 15 percent of the substrate superlattice dimension.

Abstract: A method for patterning precursor film, a product thereof, a method for preparing a patterned ceramic film and a processing workpiece. The method for patterning precursor film includes the steps of depositing a blocking layer over the precursor film, patterning the overlaid blocking layer to uncover portions of the precursor film, irradiating the patterned blocking layer and uncovered portions of the precursor film with a beam sufficiently energetic to radiation modify the full thickness of unmasked portions of the precursor film and insufficiently energetic to radiation modify portions of the precursor film covered by the blocking layer, and developing the precursor film. The blocking layer has a lesser thickness than the precursor film, but is sufficiently thick to block an irradiating beam having the minimal energy necessary to radiation modify the full thickness of the precursor layer.

Abstract: A conductive film of crystalline bismuth mixed alkaline earth oxide containing silver is disclosed. A process for promoting the growth of crystalline bismuth mixed alkaline earth oxide grains by incorporating silver prior to sintering is also disclosed.

Abstract: An electrically conductive article is disclosed comprised of a support, a barrier and a heavy pnictide mixed alkaline earth copper oxide crystalline coating. The support is an austenitic metal alloy of chromium and one or more group VIII period 4 metals, and the barrier is comprised of a high density hafnia layer.

Abstract: A process is disclosed of promoting the growth of crystalline bismuth mixed alkaline earth copper oxide grains in forming a conductive film by incorporating silver in the bismuth mixed alkaline earth copper oxide prior to sintering.

Abstract: An electrically conductive article is disclosed comprised of a support, a barrier and a heavy pnictide mixed alkaline earth copper oxide crystalline coating. The support is an austenitic metal alloy of chromium and one or more group VIII period 4 metals, and the barrier is comprised of a zirconia layer containing fissures and an oxide compatible with the electrically conductive crystalline layer located in the fissures.

Abstract: Articles are disclosed in which an electrically conductive layer on a substrate exhibits a superconducting transistion temperature in excess of 90.degree. K. Conductive layers are disclosed comprised of a crystalline heavy pnictide mixed alkaline earth copper oxide. Processes of preparing these articles are disclosed in which a mixed oxide precursor composition is coated and heated to its thermal decomposition temperature to create an amorphous mixed metal oxide layer. The amorphous layer is then heated to its crystallization temperature.

Abstract: A process is disclosed of producing on a crystalline silicon substrate a barrier layer triad capable of protecting a rare earth alkaline earth copper oxide conductive coating from direct interaction with the substrate. A silica layer of at least 2000 .ANG. in thickness is deposited on the silicon substrate, and followed by deposition on the silica layer of a Group 4 heavy metal to form a layer having a thickness in the range of from 1500 to 3000 .ANG.. Heating the layers in the absence of a reactive atmosphere to permit oxygen migration from the silica layer forms a barrier layer triad consisting of a silica first triad layer located adjacent the silicon substrate, a heavy Group 4 metal oxide third triad layer remote from the silicon substrate, and a Group 4 heavy metal silicide second triad layer interposed between the first and third triad layers.

Abstract: A flexible electrically conductive article is disclosed comprised of an organic film, a conductive crystalline cuprate layer, and a release layer that together form a flexible electrically conductive assembly. The article is prepared by forming a conductive cuprate layer on a refractory substrate with the release interposed. After the cuprate layer is formed, the organic film is bonded to it, permitting the cuprate layer to be stripped intact from the substrate with the organic film. A crystal growth accelerating agent can be associated with the cuprate layer during its formation to minimize the heat energy required for crystallization.

Abstract: A metalorganic deposition method is disclosed for manufacturing a heavy pnictide superconducting oxide film on a substrate, in which a mixed metalorganic precursor is coated and heated to its thermal decomposition temperature to create an amorphous mixed metal oxide layer. The amorphous layer is then converted to a crystalline coating by further heating followed by cooling in the presence of oxygen.

Abstract: A barrier layer triad intended to protect a silicon substrate and an overlying conductive layer from mutual contamination is disclosed as well as a process for its preparation. The barrier layer triad is comprised of a first triad layer located adjacent the silicon substrate consisting essentially of silica, a third triad layer remote from the silicon substrate consisting essentially of at least one Group 4 heavy metal oxide, and a second triad layer interposed between the first and third triad layers consisting essentially of a mixture of silica and at least one Group 4 heavy metal oxide.