Patents by Inventor Liang-Yin Chen

Liang-Yin Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • VARIABLE SIZE FIN STRUCTURES
    Publication number: 20220336644
    Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a first fin structure with a first height and a first width formed over the substrate, a second fin structure with a second height and a second width formed over the substrate, and an insulating stack formed over lower portions of the first and second fin structures. The second height can be substantially equal to the first height and the second width can be greater than the first width. A top surface of the insulating stack can be below top surfaces of the first and second fin structures.
    Type: Application
    Filed: June 30, 2022
    Publication date: October 20, 2022
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Su-Hao Liu, Huicheng Chang, Chien-Tai Chan, Liang-Yin Chen, Yee-Chia Yeo, Szu-Ying Chen
  • Transistor Source/Drain Contacts and Methods of Forming the Same
    Publication number: 20220328631
    Abstract: In an embodiment, a device includes: a gate structure on a channel region of a substrate; a gate mask on the gate structure, the gate mask including a first dielectric material and an impurity, a concentration of the impurity in the gate mask decreasing in a direction extending from an upper region of the gate mask to a lower region of the gate mask; a gate spacer on sidewalls of the gate mask and the gate structure, the gate spacer including the first dielectric material and the impurity, a concentration of the impurity in the gate spacer decreasing in a direction extending from an upper region of the gate spacer to a lower region of the gate spacer; and a source/drain region adjoining the gate spacer and the channel region.
    Type: Application
    Filed: June 10, 2021
    Publication date: October 13, 2022
    Inventors: Wei-Ting Chien, Wen-Yen Chen, Li-Ting Wang, Su-Hao Liu, Liang-Yin Chen, Huicheng Chang
  • Semiconductor Devices Including Backside Power Rails and Methods of Manufacture
    Publication number: 20220310785
    Abstract: A method of forming a semiconductor device including performing an ion implantation on a substrate and etching the substrate and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes forming a transistor on a first side of a substrate; performing an ion implantation on a second side of the substrate opposite the first side; after performing the ion implantation, etching the substrate to remove the substrate and form a first recess; and forming a dielectric layer in the first recess.
    Type: Application
    Filed: December 30, 2021
    Publication date: September 29, 2022
    Inventors: Chun-Hung Wu, Chia-Ling Chung, Su-Hao Liu, Liang-Yin Chen, Shun-Wu Lin, Huicheng Chang, Yee-Chia Yeo
  • Semiconductor device having a contact plug with an air gap spacer
    Patent number: 11456383
    Abstract: A device includes a fin extending from a semiconductor substrate; a gate stack over the fin; a first spacer on a sidewall of the gate stack; a source/drain region in the fin adjacent the first spacer; an inter-layer dielectric layer (ILD) extending over the gate stack, the first spacer, and the source/drain region, the ILD having a first portion and a second portion, wherein the second portion of the ILD is closer to the gate stack than the first portion of the ILD; a contact plug extending through the ILD and contacting the source/drain region; a second spacer on a sidewall of the contact plug; and an air gap between the first spacer and the second spacer, wherein the first portion of the ILD extends across the air gap and physically contacts the second spacer, wherein the first portion of the ILD seals the air gap.
    Type: Grant
    Filed: May 21, 2020
    Date of Patent: September 27, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Su-Hao Liu, Kuo-Ju Chen, Kai-Hsuan Lee, I-Hsieh Wong, Cheng-Yu Yang, Liang-Yin Chen, Huicheng Chang, Yee-Chia Yeo, Syun-Ming Jang, Meng-Han Chou
  • Semiconductor device and method
    Patent number: 11456373
    Abstract: In an embodiment, a device includes: a fin on a substrate, fin having a Si portion proximate the substrate and a SiGe portion distal the substrate; a gate stack over a channel region of the fin; a source/drain region adjacent the gate stack; a first doped region in the SiGe portion of the fin, the first doped region disposed between the channel region and the source/drain region, the first doped region having a uniform concentration of a dopant; and a second doped region in the SiGe portion of the fin, the second doped region disposed under the source/drain region, the second doped region having a graded concentration of the dopant decreasing in a direction extending from a top of the fin to a bottom of the fin.
    Type: Grant
    Filed: April 29, 2020
    Date of Patent: September 27, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chia-Ling Chan, Liang-Yin Chen, Wei-Ting Chien
  • Ion implant process for defect elimination in metal layer planarization
    Patent number: 11450565
    Abstract: The present disclosure describes a method for the planarization of ruthenium metal layers in conductive structures. The method includes forming a first conductive structure on a second conductive structure, where forming the first conductive structure includes forming openings in a dielectric layer disposed on the second conductive structure and depositing a ruthenium metal in the openings to overfill the openings. The formation of the first conductive structure includes doping the ruthenium metal and polishing the doped ruthenium metal to form the first conductive structure.
    Type: Grant
    Filed: August 19, 2020
    Date of Patent: September 20, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Cheng Chen, Huicheng Chang, Fu-Ming Huang, Kei-Wei Chen, Liang-Yin Chen, Tang-Kuei Chang, Yee-Chia Yeo, Wei-Wei Liang, Ji Cui
  • Doping for semiconductor device with conductive feature
    Patent number: 11450741
    Abstract: The present disclosure relates generally to doping for conductive features in a semiconductor device. In an example, a structure includes an active region of a transistor. The active region includes a source/drain region, and the source/drain region is defined at least in part by a first dopant having a first dopant concentration. The source/drain region further includes a second dopant with a concentration profile having a consistent concentration from a surface of the source/drain region into a depth of the source/drain region. The consistent concentration is greater than the first dopant concentration. The structure further includes a conductive feature contacting the source/drain region at the surface of the source/drain region.
    Type: Grant
    Filed: March 15, 2021
    Date of Patent: September 20, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Su-Hao Liu, Huicheng Chang, Chia-Cheng Chen, Liang-Yin Chen, Kuo-Ju Chen, Chun-Hung Wu, Chang-Miao Liu, Huai-Tei Yang, Lun-Kuang Tan, Wei-Ming You
  • Wafer Positioning Method and Apparatus
    Publication number: 20220293448
    Abstract: A method of correcting a misalignment of a wafer on a wafer holder and an apparatus for performing the same are disclosed. In an embodiment, a semiconductor alignment apparatus includes a wafer stage; a wafer holder over the wafer stage; a first position detector configured to detect an alignment of a wafer over the wafer holder in a first direction; a second position detector configured to detect an alignment of the wafer over the wafer holder in a second direction; and a rotational detector configured to detect a rotational alignment of the wafer over the wafer holder.
    Type: Application
    Filed: March 12, 2021
    Publication date: September 15, 2022
    Inventors: Chia-Cheng Chen, Chih-Kai Yang, Liang-Yin Chen, Huicheng Chang, Yee-Chia Yeo
  • Reducing Spacing Between Conductive Features Through Implantation
    Publication number: 20220230911
    Abstract: A method includes forming a first dielectric layer over a source/drain region, and forming a source/drain contact plug over and electrically connecting to the source/drain region. A top portion of the source/drain contact plug has a first lateral dimension. An implantation process is performed to implant a dopant into the first dielectric layer. The implantation process results in the source/drain contact plug to have a second lateral dimension smaller than the first lateral dimension. The method further includes forming a second dielectric layer over the etch stop layer, and forming a gate contact plug adjacent to the source/drain contact plug.
    Type: Application
    Filed: January 15, 2021
    Publication date: July 21, 2022
    Inventors: Kuo-Ju Chen, Su-Hao Liu, Liang-Yin Chen, Huicheng Chang, Yee-Chia Yeo, Meng-Han Chou
  • Ion exposure method and apparatus
    Patent number: 11393695
    Abstract: A method of exposing a wafer to a high-tilt angle ion beam and an apparatus for performing the same are disclosed. In an embodiment, a method includes forming a patterned mask layer over a wafer, the patterned mask layer including a patterned mask feature; exposing the wafer to an ion beam, a surface of the wafer being tilted at a tilt angle with respect to the ion beam; and moving the wafer along a scan line with respect to the ion beam, a scan angle being defined between the scan line and an axis perpendicular to an axis of the ion beam, a difference between the tilt angle and the scan angle being less than 50°.
    Type: Grant
    Filed: March 18, 2021
    Date of Patent: July 19, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Cheng Chen, Wei-Ting Chien, Liang-Yin Chen, Huicheng Chang, Yee-Chia Yeo
  • SEMICONDUCTOR DEVICE AND METHODS OF FORMING THE SAME
    Publication number: 20220216147
    Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a gate structure, a dielectric structure and a contact structure. The substrate has source/drain (S/D) regions. The gate structure is on the substrate and between the S/D regions. The dielectric structure covers the gate structure. The contact structure penetrates through the dielectric structure to connect to the S/D region. A lower portion of a sidewall of the contact structure is spaced apart from the dielectric structure by an air gap therebetween, while an upper portion of the sidewall of the contact structure is in contact with the dielectric structure.
    Type: Application
    Filed: March 23, 2022
    Publication date: July 7, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Pei-Yu Chou, Jr-Hung Li, Liang-Yin Chen, Su-Hao Liu, Tze-Liang Lee, Meng-Han Chou, Kuo-Ju Chen, Huicheng Chang, Tsai-Jung Ho, Tzu-Yang Ho
  • Variable size fin structures
    Patent number: 11380782
    Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a first fin structure with a first height and a first width formed over the substrate, a second fin structure with a second height and a second width formed over the substrate, and an insulating stack formed over lower portions of the first and second fin structures. The second height can be substantially equal to the first height and the second width can be greater than the first width. A top surface of the insulating stack can be below top surfaces of the first and second fin structures.
    Type: Grant
    Filed: August 18, 2020
    Date of Patent: July 5, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Su-Hao Liu, Huicheng Chang, Chien-Tai Chan, Liang-Yin Chen, Yee-Chia Yeo, Szu-Ying Chen
  • SACRIFICIAL LAYER FOR SEMICONDUCTOR PROCESS
    Publication number: 20220181451
    Abstract: A method of forming a semiconductor device includes forming a source/drain region and a gate electrode adjacent the source/drain region, forming a hard mask over the gate electrode, forming a bottom mask over the source/drain region, wherein the gate electrode is exposed, and performing a nitridation process on the hard mask over the gate electrode. The bottom mask remains over the source/drain region during the nitridation process and is removed after the nitridation. The method further includes forming a silicide over the source/drain region after removing the bottom mask.
    Type: Application
    Filed: February 21, 2022
    Publication date: June 9, 2022
    Inventors: Tsan-Chun Wang, Su-Hao Liu, Liang-Yin Chen, Huicheng Chang, Yee-Chia Yeo
  • Source/Drain Structure
    Publication number: 20220173239
    Abstract: Embodiments disclosed herein relate to using an implantation process and a melting anneal process performed on a nanosecond scale to achieve a high surface concentration (surface pile up) dopant profile and a retrograde dopant profile simultaneously. In an embodiment, a method includes forming a source/drain structure in an active area on a substrate, the source/drain structure including a first region comprising germanium, implanting a first dopant into the first region of the source/drain structure to form an amorphous region in at least the first region of the source/drain structure, implanting a second dopant into the amorphous region containing the first dopant, and heating the source/drain structure to liquidize and convert at least the amorphous region into a crystalline region, the crystalline region containing the first dopant and the second dopant.
    Type: Application
    Filed: February 17, 2022
    Publication date: June 2, 2022
    Inventors: Su-Hao Liu, Kuo-Ju Chen, Wen-Yen Chen, Ying-Lang Wang, Liang-Yin Chen, Li-Ting Wang, Huicheng Chang
  • Melt Anneal Source and Drain Regions
    Publication number: 20220140079
    Abstract: A method includes forming a gate stack on a first portion of a semiconductor substrate, removing a second portion of the semiconductor substrate on a side of the gate stack to form a recess, growing a semiconductor region starting from the recess, implanting the semiconductor region with an impurity, and performing a melt anneal on the semiconductor region. At least a portion of the semiconductor region is molten during the melt anneal.
    Type: Application
    Filed: January 17, 2022
    Publication date: May 5, 2022
    Inventors: Su-Hao Liu, Wen-Yen Chen, Li-Heng Chen, Li-Ting Wang, Liang-Yin Chen, Huicheng Chang, Yee-Chia Yeo, Ying-Lang Wang
  • Metal Loss Prevention Using Implantation
    Publication number: 20220122884
    Abstract: The present disclosure provides methods for forming conductive features in a dielectric layer without using adhesion layers or barrier layers and devices formed thereby. In some embodiments, a structure comprising a dielectric layer over a substrate, and a conductive feature disposed through the dielectric layer. The dielectric layer has a lower surface near the substrate and a top surface distal from the substrate. The conductive feature is in direct contact with the dielectric layer, and the dielectric layer comprises an implant species. A concentration of the implant species in the dielectric layer has a peak concentration proximate the top surface of the dielectric layer, and the concentration of the implant species decreases from the peak concentration in a direction towards the lower surface of the dielectric layer.
    Type: Application
    Filed: December 27, 2021
    Publication date: April 21, 2022
    Inventors: Li-Chieh Wu, Tang-Kuei Chang, Kuo-Hsiu Wei, Kei-Wei Chen, Ying-Lang Wang, Su-Hao Liu, Kuo-Ju Chen, Liang-Yin Chen, Huicheng Chang, Ting-Kui Chang, Chia Hsuan Lee
  • SYSTEM AND METHOD FOR MULTIPLE STEP DIRECTIONAL PATTERNING
    Publication number: 20220102139
    Abstract: A semiconductor process system includes an ion source configured to bombard with a photoresist structure on a wafer. The semiconductor process system reduces a width of the photoresist structure by bombarding the photoresist structure with ions in multiple distinct ion bombardment steps having different characteristics.
    Type: Application
    Filed: June 21, 2021
    Publication date: March 31, 2022
    Inventors: Chih-Kai YANG, Yu-Tien SHEN, Hsiang-Ming CHANG, Chun-Yen CHANG, Ya-Hui CHANG, Wei-Ting CHIEN, Chia-Cheng CHEN, Liang-Yin CHEN
  • Semiconductor device and methods of forming the same
    Patent number: 11289417
    Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a gate structure, a dielectric structure and a contact structure. The substrate has source/drain (S/D) regions. The gate structure is on the substrate and between the S/D regions. The dielectric structure covers the gate structure. The contact structure penetrates through the dielectric structure to connect to the S/D region. A lower portion of a sidewall of the contact structure is spaced apart from the dielectric structure by an air gap therebetween, while an upper portion of the sidewall of the contact structure is in contact with the dielectric structure.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: March 29, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Pei-Yu Chou, Jr-Hung Li, Liang-Yin Chen, Su-Hao Liu, Tze-Liang Lee, Meng-Han Chou, Kuo-Ju Chen, Huicheng Chang, Tsai-Jung Ho, Tzu-Yang Ho
  • Semiconductor Device and Method
    Publication number: 20220093758
    Abstract: Methods for improving sealing between contact plugs and adjacent dielectric layers and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first dielectric layer over a conductive feature, a first portion of the first dielectric layer including a first dopant; a metal feature electrically coupled to the conductive feature, the metal feature including a first contact material in contact with the conductive feature; a second contact material over the first contact material, the second contact material including a material different from the first contact material, a first portion of the second contact material further including the first dopant; and a dielectric liner between the first dielectric layer and the metal feature, a first portion of the dielectric liner including the first dopant.
    Type: Application
    Filed: April 6, 2021
    Publication date: March 24, 2022
    Inventors: Kuo-Ju Chen, Shih-Hsiang Chiu, Su-Hao Liu, Liang-Yin Chen, Huicheng Chang, Yee-Chia Yeo
  • Bottom Lateral Expansion of Contact Plugs Through Implantation
    Publication number: 20220059405
    Abstract: A method includes forming a metallic feature, forming an etch stop layer over the metallic feature, implanting the metallic feature with a dopant, forming a dielectric layer over the etch stop layer, performing a first etching process to etch the dielectric layer and the etch stop layer to form a first opening, performing a second etching process to etch the metallic feature and to form a second opening in the metallic feature, wherein the second opening is joined with the first opening, and filling the first opening and the second opening with a metallic material to form a contact plug.
    Type: Application
    Filed: August 24, 2020
    Publication date: February 24, 2022
    Inventors: Meng-Han Chou, Su-Hao Liu, Kuo-Ju Chen, Liang-Yin Chen, Huicheng Chang, Yee-Chia Yeo