Patents by Inventor Liang-Ying Huang
Liang-Ying Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8298455Abstract: An alignment material composition including an alignment material, an ultraviolet absorbent, a light stabilizer and a solvent is provided. The ultraviolet absorbent has a formula 1 shown as below: wherein X represents hydrogen, alkyl group or halogen while R1 represents benzene ring carbon long-chain derivative. The light stabilizer has a formula 2 shown as below: wherein R2 represents ester-based derivative or amine-based derivative, R3 represents hydrogen, hydroxyl group (—OH) or alkyl group.Type: GrantFiled: May 19, 2009Date of Patent: October 30, 2012Assignee: Au Optronics CorporationInventors: Yi-Hau Shiau, Suo-Chun Hsu, Hsin-An Cheng, Yang-Chu Lin, Liang-Ying Huang, Tai-Hsiang Huang
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Publication number: 20120015115Abstract: A display panel includes a first substrate, a second substrate, a liquid crystal material between the first and second substrates, and an alignment layer on at least one of the first and second substrates. The liquid crystal material includes 10-90 wt % of a non-polar liquid crystal compound and 10-90 wt % of a polar liquid crystal compound, wherein a total amount of the non-polar and the polar liquid crystal compounds is 100 wt %. The non-polar liquid crystal compound has a dielectric anisotropy (??) of ?1????1, and the polar liquid crystal compound has a dielectric anisotropy (??) of ???1. The alignment layer has at least one of a polyamic acid and a cyclodehydration of the polyamic acid, wherein the polyamic acid is obtained by reacting a diamine compound with a tetracarboxylic acid dianhyhydirde compound.Type: ApplicationFiled: November 12, 2010Publication date: January 19, 2012Applicant: AU OPTRONICS CORPORATIONInventors: Yang-Chu Lin, Li-Wei Kung, Liang-Ying Huang, Hsin-An Cheng, Norio Sugiura, Wei-Lung Liau
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Patent number: 7872263Abstract: A method of TFT (Thin Film Transistor) manufacturing and a substrate structure are provided. The structure includes a substrate and a self-alignment mask. A self-alignment mask on a substrate is first manufactured and then the self-alignment mask may synchronously extend with the substrate during the thermal process. When an exposure light source is provided on the side without a TFT formed, the self-alignment mask can overcome the problem that when a plastic substrate extends, the positions of the source and drain to be formed on the plastic substrate are incorrect, which has a great effect on the accuracy of alignment. As the result, the positions of the source and drain can be defined accurately.Type: GrantFiled: July 24, 2006Date of Patent: January 18, 2011Assignee: Industrial Technology Research InstituteInventors: Liang-Ying Huang, Yi-Kai Wang, Tarng-Shiang Hu, Jia-Chong Ho
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Patent number: 7834357Abstract: A structure of a thin film transistor (TFT) is provided. A substrate has a first surface and a second surface opposite to each other, in which the first surface has a patterned mask layer. A patterned first electrode layer is disposed on the second surface of the substrate and has a gate portion and a capacitor electrode portion. A patterned second electrode layer is disposed on the second surface of the substrate and has a source and a drain, in which the patterned second electrode layer is self-aligned with the patterned first electrode layer by exposing the first surface of the substrate with the patterned mask layer as a mask. An insulating layer is disposed between the patterned first electrode layer and the patterned second electrode layer.Type: GrantFiled: October 11, 2007Date of Patent: November 16, 2010Assignee: Industrial Technology Research InstituteInventors: Yi-Kai Wang, Liang-Ying Huang, Tarng-Shiang Hu, Yu-Yuan Shen
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Patent number: 7829398Abstract: A method for making a thin film transistor (TFT) is provided. A mask is first formed on the backside of a substrate, and is used to fabricate a gate, source, and drain of the transistor by backside exposure, such that the source and drain can be self-aligned with the gate pattern. In this way, an alignment shift due to expansion or contraction after performing a high temperature process on an insulating layer can be avoided. Further, since the backside mask previously formed on the substrate can be shifted with the expansion or contraction of the substrate, the process is simplified. Moreover, the source/drain can be accurately aligned with the gate, so that parasitic capacitance can be reduced and flickering of the panel can be avoided.Type: GrantFiled: October 11, 2007Date of Patent: November 9, 2010Assignee: Industrial Technology Research InstituteInventors: Yi-Kai Wang, Liang-Ying Huang, Tarng-Shiang Hu, Yu-Yuan Shen
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Publication number: 20100213423Abstract: An alignment material composition including an alignment material, an ultraviolet absorbent, a light stabilizer and a solvent is provided. The ultraviolet absorbent has a formula 1 shown as below: wherein X represents hydrogen, alkyl group or halogen while R1 represents benzene ring carbon long-chain derivative. The light stabilizer has a formula 2 shown as below: wherein R2 represents ester-based derivative or amine-based derivative, R3 represents hydrogen, hydroxyl group (—OH) or alkyl group.Type: ApplicationFiled: May 19, 2009Publication date: August 26, 2010Applicant: AU OPTRONICS CORPORATIONInventors: Yi-Hau Shiau, Suo-Chun Hsu, Hsin-An Cheng, Yang-Chu Lin, Liang-Ying Huang, Tai-Hsiang Huang
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Patent number: 7632705Abstract: A method of high precision printing for manufacturing organic thin film transistor, comprising the following steps of: forming a gate on a substrate; forming an insulator layer on the substrate; forming a conducting wire electrode film on the insulator layer; forming a organic interlayer; forming a organic semiconductor layer on the organic interlayer; forming a polymer layer for channel length on the organic semiconductor layer; forming a organic electrode film; and forming a protective layer. Moreover, a means for forming layers of above mentioned method is a high precision printing selected from the consisting of Inkject Printing, Screen Printing, Blade Coating, Roller Coating, Nanoimprinting, Micro Contact Printing, Flexographic printing, Table coating and Spin Coating, etc.Type: GrantFiled: May 4, 2005Date of Patent: December 15, 2009Assignee: Industrial Technology Research InstituteInventors: Jia-Chong Ho, Liang-Ying Huang, Tarng-Shiang Hu, Cheng-Chung Lee
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Publication number: 20090117686Abstract: A method of fabricating an organic semiconductor device includes following steps. A gate conductive layer is formed on a substrate, and then a gate dielectric layer is formed. Next, patterned metal layers are formed on the gate dielectric layer beside the gate conductive layer. An electrode modified layer is then formed on the surface and the sidewall of each patterned metal layer, and the patterned metal layers and the electrode modified layers formed thereon serve as a source and a drain. Thereafter, an organic semiconductor layer is formed on the source and the drain and on a portion of the gate dielectric layer exposed between the source and the drain to be an active layer.Type: ApplicationFiled: January 8, 2009Publication date: May 7, 2009Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Liang-Ying Huang, Tsung-Hsien Lin, Hsiang-Yuan Cheng, Tarng-Shiang Hu
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Patent number: 7495253Abstract: An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.Type: GrantFiled: July 27, 2007Date of Patent: February 24, 2009Assignee: Industrial Technology Research InstituteInventors: Liang-Ying Huang, Jia-Chong Ho, Cheng-Chung Lee, Tarng-Shiang Hu, Wen-Kuei Huang, Wei-Ling Lin, Cheng-Chung Hsieh
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Publication number: 20080157070Abstract: An organic semiconductor element having multi protection layers and process of making the same are provided. Firstly, forming a first protection layer on the thin film transistor. Next, forming a second protection layer which is thick enough to serve as the photo spacers on said first protection layer. The multi protection layers are then grown on said organic thin film transistor, so as to enable the second protection layer to have the additional function of the photo spacers by the patterning process. Thus the organic thin film transistor can be prevented from being damaged, and achieving the simplification of the manufacturing process and the reduction of the production cost.Type: ApplicationFiled: January 18, 2008Publication date: July 3, 2008Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Cheng-Chung Hsieh, Liang-Ying Huang, Tarng-Shiang Hu, Cheng-Chung Lee
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Publication number: 20080099843Abstract: A structure of a thin film transistor (TFT) is provided. A substrate has a first surface and a second surface opposite to each other, in which the first surface has a patterned mask layer. A patterned first electrode layer is disposed on the second surface of the substrate and has a gate portion and a capacitor electrode portion. A patterned second electrode layer is disposed on the second surface of the substrate and has a source and a drain, in which the patterned second electrode layer is self-aligned with the patterned first electrode layer by exposing the first surface of the substrate with the patterned mask layer as a mask. An insulating layer is disposed between the patterned first electrode layer and the patterned second electrode layer.Type: ApplicationFiled: October 11, 2007Publication date: May 1, 2008Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yi-Kai Wang, Liang-Ying Huang, Tarng-Shiang Hu, Yu-Yuan Shen
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Publication number: 20080102567Abstract: A method for making a thin film transistor (TFT) is provided. A mask is first formed on the backside of a substrate, and is used to fabricate a gate, source, and drain of the transistor by backside exposure, such that the source and drain can be self-aligned with the gate pattern. In this way, an alignment shift due to expansion or contraction after performing a high temperature process on an insulating layer can be avoided. Further, since the backside mask previously formed on the substrate can be shifted with the expansion or contraction of the substrate, the process is simplified. Moreover, the source/drain can be accurately aligned with the gate, so that parasitic capacitance can be reduced and flickering of the panel can be avoided.Type: ApplicationFiled: October 11, 2007Publication date: May 1, 2008Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yi-Kai Wang, Liang-Ying Huang, Tarng-Shiang Hu, Yu-Yuan Shen
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Patent number: 7344914Abstract: An organic semiconductor element having multi protection layers and process of making the same are provided. Firstly, forming a first protection layer on the thin film transistor. Next, forming a second protection layer which is thick enough to serve as the photo spacers on said first protection layer. The multi protection layers are then grown on said organic thin film transistor, so as to enable the second protection layer to have the additional function of the photo spacers by the patterning process. Thus the organic thin film transistor can be prevented from being damaged, and achieving the simplification of the manufacturing process and the reduction of the production cost.Type: GrantFiled: June 10, 2005Date of Patent: March 18, 2008Assignee: Industrial Technology Research InstituteInventors: Cheng-Chung Hsieh, Liang-Ying Huang, Tarng-Shiang Hu, Cheng-chung Lee
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Patent number: 7335324Abstract: A color filter manufacturing method for a plastic substrate uses an extrusion process to form a plastic substrate with multiple grooves. Then, it uses inkjet printing method to jet photo resists into the groove of the plastic substrate after defining the primary colors of red R., green G., and blue B. The method can overcome the problem happened in the conventional CF photolithography process. This, therefore, can simplify the manufacturing process, and can apply to the large-area plastic substrate of a color filter.Type: GrantFiled: October 7, 2003Date of Patent: February 26, 2008Assignee: Industrial Technology Research InstituteInventors: Liang-Ying Huang, Ching-Hsiang Chan, Jia-Chong Ho, Chi-Chang Liao, Lung-Pin Hsin
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Publication number: 20080035918Abstract: An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.Type: ApplicationFiled: July 27, 2007Publication date: February 14, 2008Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Liang-Ying Huang, Jia-Chong Ho, Cheng-Chung Lee, Tarng-Shiang Hu, Wen-Kuei Huang, Wei-Ling Lin, Cheng-Chung Hsieh
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Publication number: 20080032440Abstract: An organic semiconductor device is provided. A conductive gate layer and a gate dielectric layer are formed on a substrate. Patterned metal layers are formed on the gate dielectric layer beside the conductive gate layer. An electrode modified layer is formed on a top surface and sidewall of each of the patterned metal layer. The patterned metal layers and the electrode modified layers formed thereon serve a source and a drain. An organic semiconductor layer is formed on the source and the drain.Type: ApplicationFiled: November 29, 2006Publication date: February 7, 2008Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Liang-Ying Huang, Tsung-Hsien Lin, Hsiang-Yuan Cheng, Tarng-Shiang Hu
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Patent number: 7264989Abstract: An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.Type: GrantFiled: May 7, 2004Date of Patent: September 4, 2007Assignee: Industrial Technology Research InstituteInventors: Liang-Ying Huang, Jia-Chong Ho, Cheng-Chung Lee, Tarng-Shiang Hu, Wen-Kuei Huang, Wei-Ling Lin, Cheng-Chung Hsieh
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Patent number: 7259047Abstract: A method for manufacturing an organic thin-film transistor with a plastic substrate, comprising steps of: providing a mold and a plastic substrate, said mold being provided with a relief printing structure; imprinting said plastic substrate by said mold so as to define source/drain electrode regions on said plastic substrate; forming a first electrode layer so as to form source/drain electrodes on said source/drain electrode regions on said plastic substrate; forming a plurality of semiconductor mesas, each of said semiconductor mesas covering a pair of said source/drain electrodes; forming an insulating layer; forming a second electrode layer, being separated from and on said semiconductor mesas by said insulating layer; and forming a passivation layer.Type: GrantFiled: April 1, 2005Date of Patent: August 21, 2007Assignee: Industrial Technology Research InstituteInventors: Liang-Ying Huang, Jia-Chong Ho, Cheng-Chung Lee
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Patent number: 7211463Abstract: The invention related to a process for improving carrier mobility of organic semiconductor, comprising the steps of: forming a gate on a substrate; forming an insulator layer on the substrate and the gate; coating polyimide on the insulator layer to form an interlayer; forming an active layer on the interlayer; and forming a source and a drain.Type: GrantFiled: September 24, 2004Date of Patent: May 1, 2007Assignee: Industrial Technology Research InstituteInventors: Tarng-Shiang Hu, Jia-Chong Ho, Liang-Ying Huang, Wei-Ling Lin
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Publication number: 20070059868Abstract: A method of TFT (Thin Film Transistor) manufacturing and a substrate structure are provided. The structure includes a substrate and a self-alignment mask. A self-alignment mask on a substrate is first manufactured and then the self-alignment mask may synchronously extend with the substrate during the thermal process. When an exposure light source is provided on the side without a TFT formed, the self-alignment mask can overcome the problem that when a plastic substrate extends, the positions of the source and drain to be formed on the plastic substrate are incorrect, which has a great effect on the accuracy of alignment. As the result, the positions of the source and drain can be defined accurately.Type: ApplicationFiled: July 24, 2006Publication date: March 15, 2007Inventors: Liang-Ying Huang, Yi-Kai Wang, Tarng-Shiang Hu, Jia-Chong Ho