Patents by Inventor Lianghong Liu
Lianghong Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11988023Abstract: The disclosure is an intelligent electronic lock. The intelligent electronic lock includes: an electronic lock shell, a wireless communication module, an instruction input device, the instruction input device is arranged on the electronic lock shell for instruction input, a processor, the processor is connected to the wireless communication module and the instruction input device is connected to receive and send signals, and the electronic rope.Type: GrantFiled: June 8, 2021Date of Patent: May 21, 2024Assignee: Shenzhen Joint Technology Co., LtdInventors: Zunyan Chen, Jun Chen, Lianghong Wu, Jinghui Chen, Fan Liu
-
Publication number: 20220372652Abstract: The present invention provides a preparation method of a gallium nitride single crystal based on a ScAlMgO4 substrate, comprising following steps: (1) providing a ScAlMgO4 substrate; (2) growing a buffer layer on a surface of the ScAlMgO4 substrate; (3) annealing the buffer layer; (4) growing a GaN crystal on the buffer layer; (5) performing cooling, so that the GaN crystal is automatically peeled off from the ScAlMgO4 substrate. The present invention does not need to use a complex MOCVD process for GaN deposition and preprocessing to make a mask or a separation layer, which effectively reduces production costs; compared with traditional substrates such as sapphire, it has higher quality and a larger radius of curvature, and will not cause a problem of OFFCUT non-uniformity for growing GaN over 4 inches; finally, the present invention can realize continuous growth into a crystal bar with a thickness of more than 5 mm, which further reduces the costs.Type: ApplicationFiled: April 27, 2021Publication date: November 24, 2022Inventors: Haitao ZHANG, Bin XU, Bo PANG, Lianghong LIU
-
Patent number: 9263266Abstract: Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.Type: GrantFiled: June 15, 2015Date of Patent: February 16, 2016Assignee: Kyma Technologies, Inc.Inventors: Andrew D. Hanser, Lianghong Liu, Edward Preble, Denis Tsvetkov, N. Mark Williams, Xueping Xu
-
Publication number: 20150279675Abstract: Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.Type: ApplicationFiled: June 15, 2015Publication date: October 1, 2015Inventors: Andrew D. Hanser, Lianghong Liu, Edward Preble, Denis Tsvetkov, N. Mark Williams, Xueping Xu
-
Publication number: 20150200256Abstract: Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.Type: ApplicationFiled: April 4, 2013Publication date: July 16, 2015Applicant: Kyma Technologies, Inc.Inventors: Andrew D. Hanser, Lianghong Liu, Edward Preble, Denis Tsvetkov, N. Mark Williams, Xueping Xu
-
Patent number: 9082890Abstract: Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.Type: GrantFiled: April 4, 2013Date of Patent: July 14, 2015Assignee: Kyma Technologies, Inc.Inventors: Andrew D. Hanser, Lianghong Liu, Edward Preble, Denis Tsvetkov, N. Mark Williams, Xueping Xu
-
Patent number: 8871556Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.Type: GrantFiled: December 17, 2013Date of Patent: October 28, 2014Assignee: Kyma Technologies, Inc.Inventors: Edward Preble, Lianghong Liu, Andrew D. Hanser, N. Mark Williams, Xueping Xu
-
Publication number: 20140162441Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.Type: ApplicationFiled: December 17, 2013Publication date: June 12, 2014Applicant: Kyma Technologies, Inc.Inventors: Edward Preble, Lianghong Liu, Andrew D. Hanser, N. Mark Williams, Xueping Xu
-
Patent number: 8637848Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.Type: GrantFiled: December 6, 2012Date of Patent: January 28, 2014Assignee: Kyma Technologies, Inc.Inventors: Edward Preble, Lianghong Liu, Andrew D. Hanser, N. Mark Williams, Xueping Xu
-
Patent number: 8435879Abstract: Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.Type: GrantFiled: November 30, 2006Date of Patent: May 7, 2013Assignee: Kyma Technologies, Inc.Inventors: Andrew D. Hanser, Lianghong Liu, Edward A. Preble, Denis Tsvetkov, Nathaniel Mark Williams, Xueping Xu
-
Patent number: 8349711Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.Type: GrantFiled: January 27, 2011Date of Patent: January 8, 2013Assignee: Kyma Technologies, Inc.Inventors: Edward A. Preble, Lianghong Liu, Andrew D. Hanser, N. Mark Williams, Xueping Xu
-
Publication number: 20120211917Abstract: A method of forming a sheet wafer 1) passes at least two filaments through a molten material to produce a partially formed sheet wafer, 2) directs a cooling fluid at a flow rate toward the partially formed sheet wafer to convectively cool a given portion of the partially formed sheet wafer, and 3) monitors the thickness of the given portion of the partially formed sheet wafer. To ensure appropriate thicknesses of the wafer, the method controls the flow rate of the cooling fluid as a function of the thickness of the given portion of the partially formed sheet wafer.Type: ApplicationFiled: February 23, 2011Publication date: August 23, 2012Applicant: EVERGREEN SOLAR, INC.Inventors: Leo van Glabbeek, Lianghong Liu, Weidong Huang, David Hitchcock, Stephen Yamartino
-
Publication number: 20110198590Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.Type: ApplicationFiled: January 27, 2011Publication date: August 18, 2011Inventors: Edward A. Preble, Lianghong Liu, Andrew D. Hanser, N. Mark Williams, Xueping Xu
-
Patent number: 7897490Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.Type: GrantFiled: November 30, 2006Date of Patent: March 1, 2011Assignee: Kyma Technologies, Inc.Inventors: Edward A. Preble, Lianghong Liu, Andrew D. Hanser, N. Mark Williams, Xueping Xu
-
Publication number: 20100327291Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.Type: ApplicationFiled: November 30, 2006Publication date: December 30, 2010Applicant: Kyma Technologies, Inc.Inventors: Edward A. Preble, Lianghong Liu, Andrew D. Hanser, N. Mark Williams, Xueping Xu
-
Patent number: 7727874Abstract: Non-polar or semi-polar (Al, Ga, In)N substrates are fabricated by re-growth of (Al, Ga, In)N crystal on (Al, Ga, In)N seed crystals, wherein the size of the seed crystal expands or is increased in the lateral and vertical directions, resulting in larger sizes of non-polar and semi-polar substrates useful for optoelectronic and microelectronic devices. One or more non-polar or semi-polar substrates may be sliced from the re-grown crystal. The lateral growth rate may be greater than the vertical growth rate. The seed crystal may be a non-polar seed crystal. The seed crystal may have crystalline edges of equivalent crystallographic orientation.Type: GrantFiled: September 12, 2008Date of Patent: June 1, 2010Assignee: Kyma Technologies, Inc.Inventors: Andrew David Hanser, Edward Alfred Preble, Lianghong Liu, Terry Lee Clites, Keith Richard Evans
-
Publication number: 20100044718Abstract: Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.Type: ApplicationFiled: November 30, 2006Publication date: February 25, 2010Inventors: Andrew D. Hanser, Lianghong Liu, Edward A. Preble, Denis Tsvetkov, Nathaniel Mark Williams, Xueping Xu
-
Publication number: 20090081857Abstract: Non-polar or semi-polar (Al, Ga, In)N substrates are fabricated by re-growth of (Al, Ga, In)N crystal on (Al, Ga, In)N seed crystals, wherein the size of the seed crystal expands or is increased in the lateral and vertical directions, resulting in larger sizes of non-polar and semi-polar substrates useful for optoelectronic and microelectronic devices. One or more non-polar or semi-polar substrates may be sliced from the re-grown crystal. The lateral growth rate may be greater than the vertical growth rate. The seed crystal may be a non-polar seed crystal.Type: ApplicationFiled: September 12, 2008Publication date: March 26, 2009Applicant: Kyma Technologies, Inc.Inventors: Andrew David Hanser, Edward Alfred Preble, Lianghong Liu, Terry Lee Clites, Keith Richard Evans
-
Publication number: 20070138505Abstract: In a method for making a low-defect single-crystal GaN film, an epitaxial nitride layer is deposited on a substrate. A first GaN layer is grown on the epitaxial nitride layer by HVPE under a growth condition that promotes the formation of pits, wherein after growing the first GaN layer the GaN film surface morphology is rough and pitted. A second GaN layer is grown on the first GaN layer to form a GaN film on the substrate. The second GaN layer is grown by HVPE under a growth condition that promotes filling of the pits, and after growing the second GaN layer the GaN film surface morphology is essentially pit-free. A GaN film having a characteristic dimension of about 2 inches or greater, and a thickness normal ranging from approximately 10 to approximately 250 microns, includes a pit-free surface, the threading dislocation density being less than 1×108 cm?2.Type: ApplicationFiled: November 30, 2006Publication date: June 21, 2007Applicant: Kyma Technologies, Inc.Inventors: Edward Preble, Lianghong Liu, Andrew Hanser, N. Williams, Xueping Xu