Patents by Inventor Ligiong Wei

Ligiong Wei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Biasing technique for a high density SRAM
    Patent number: 6775181
    Abstract: According to one embodiment, a memory cell is disclosed. The memory cell includes a first PMOS transistor, a first NMOS transistor coupled to the first PMOS transistor, a second PMOS transistor and a second NMOS transistor coupled to the first PMOS transistor. The first and second PMOS transistors receiving a bias control signal.
    Type: Grant
    Filed: July 3, 2003
    Date of Patent: August 10, 2004
    Assignee: Intel Corporation
    Inventors: Kevin X. Zhang, Ligiong Wei
  • Biasing technique for a high density SRAM
    Publication number: 20040095811
    Abstract: According to one embodiment, a memory cell is disclosed. The memory cell includes a first PMOS transistor, a first NMOS transistor coupled to the first PMOS transistor, a second PMOS transistor and a second NMOS transistor coupled to the first PMOS transistor. The first and second PMOS transistors receiving a bias control signal.
    Type: Application
    Filed: July 3, 2003
    Publication date: May 20, 2004
    Inventors: Kevin X. Zhang, Ligiong Wei