Patents by Inventor Lih-Wei Lin
Lih-Wei Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10347336Abstract: The disclosure provides a method for obtaining optimal operating condition of a resistive random access memory (RRAM). The method includes: retrieving an RRAM chip and performing a forming operation and an initial reset operation thereto based on a first operating condition; segmenting the RRAM chip into blocks; performing a set operation to each of the blocks based on various operating voltages; obtaining a fail bit value of each of the blocks; generating an operating characteristic curve related to the RRAM chip based on the fail bit value of each of the blocks and the operating voltages, wherein the operating characteristic curve has a lowest fail bit value and an operating voltage window; and when the lowest fail bit value and the operating voltage window satisfy a first condition and a second condition, respectively, determining the first operating condition is an optimal operating condition of the RRAM chip.Type: GrantFiled: July 20, 2018Date of Patent: July 9, 2019Assignee: Winbond Electronics Corp.Inventors: Tsung-Huan Tsai, Lih-Wei Lin, I-Hsien Tseng, Wen-Ting Wang
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Publication number: 20190172535Abstract: A resistive memory apparatus including a memory cell array and a voltage selector circuit is provided. The memory cell array includes a plurality of memory cells. The voltage selector circuit is coupled to the memory cell array. The voltage selector circuit performs a voltage applying operation on the memory cells via a plurality of different signal transmission paths. Each of the signal transmission paths passes one of the memory cells. IR drops of two of the signal transmission paths are substantially identical, and signal transmission directions thereof are different. In addition, an operating method of a resistive memory apparatus is also provided.Type: ApplicationFiled: November 1, 2018Publication date: June 6, 2019Applicant: Winbond Electronics Corp.Inventors: Lih-Wei Lin, Yu-Cheng Chuang, Sung-Yi Lee
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Publication number: 20190088321Abstract: An operating method of a resistive memory element includes: performing a thermal step on the resistive memory element; performing a set and reset cycle operation on the resistive memory element to increase a read margin of the resistive memory element after a thermal step; and determining whether the resistive memory element passes a read margin verification.Type: ApplicationFiled: August 31, 2018Publication date: March 21, 2019Applicant: Winbond Electronics Corp.Inventors: Lih-Wei Lin, Tsung-Huan Tsai, Chi-Shun Lin, Seow Fong Lim
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Publication number: 20190074059Abstract: A writing method of a resistive memory storage apparatus includes: applying one of a set voltage and a reset voltage serving as a first selected voltage to a memory cell and obtaining a first read current of the memory cell; applying a disturbance voltage to the memory cell and obtaining a second read current of the memory cell; and determining whether a relationship between the first and second read currents satisfies a preset relationship, and if not, applying the other of the set voltage and the reset voltage serving as a second selected voltage to the memory cell and applying the first selected voltage to the memory cell again. A polarity of the disturbance voltage is different from that of the second selected voltage, and the absolute value of the disturbance voltage is less than that of the second selected voltage. A resistive memory storage apparatus is also provided.Type: ApplicationFiled: August 21, 2018Publication date: March 7, 2019Applicant: Winbond Electronics Corp.Inventors: Lih-Wei Lin, Lung-Chi Cheng, Min-Yen Liu, Huan-Ming Chiang
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Publication number: 20190057738Abstract: A writing method of a resistive memory storage apparatus is provided. The writing method includes: applying a first set voltage on a memory cell, and acquiring a first reading current of the memory cell; applying a first disturbance voltage on the memory cell, and acquiring a second reading current of the memory cell; and determining to apply a second set voltage or a second disturbance voltage on the memory cell according to a magnitude relationship between the first reading current and the second reading current. An absolute value of the first disturbance voltage is smaller than an absolute value of a reset voltage, and an absolute value of the second disturbance voltage is smaller than an absolute value of the second set voltage. In addition, a resistive memory storage apparatus is also provided.Type: ApplicationFiled: July 30, 2018Publication date: February 21, 2019Applicant: Winbond Electronics Corp.Inventors: Lih-Wei Lin, Ju-Chieh Cheng, Tsung-Huan Tsai, I-Hsien Tseng
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Patent number: 9691980Abstract: A method for forming a memory device is provided. The method includes forming a plurality of memory cells. The method also includes performing a first baking on the memory cells. The method further includes setting a specified current, and after performing the first baking, performing a test process on the memory cells. The test process includes reading the current of the memory cells. When the read current of the memory cells is larger than or equal to the specified current, the test process of the memory cell is done. When the read current of the memory cells is smaller than the specified current, a re-forming process is performed on the memory cells to form a plurality of re-formed memory cells, and then the test process is performed on the re-formed memory cells.Type: GrantFiled: October 24, 2016Date of Patent: June 27, 2017Assignee: WINBOND ELECTRONICS CORP.Inventors: Chia-Hung Lin, Lih-Wei Lin, I-Hsien Tseng, Tsung-Huan Tsai
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Patent number: 9627059Abstract: A resistive memory and a data writing method for a resistive memory cell thereof are provided. The method includes: receiving and decoding a column address signal for generating a decoded result, and providing a word line voltage to a word line of the resistive memory cell; providing a constant current to one of a bit line and a source line of the resistive memory cell, and coupling a reference ground voltage to another one of the bit line and the source line of the resistive memory cell.Type: GrantFiled: December 22, 2015Date of Patent: April 18, 2017Assignee: Winbond Electronics Corp.Inventors: Lih-Wei Lin, I-Hsien Tseng, Ju-Chieh Cheng, Chia-Hung Lin, Tsung-Huan Tsai, Po-Wei Huang
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Patent number: 9620208Abstract: A memory-programming device includes a voltage generator, a resistive random-access memory, a current detector, and a controller. The voltage generator is configured to generate a program voltage. The resistive random-access memory receives the program voltage to generate a program current. The current detector detects the program current. The controller executes a program procedure. The program procedure includes: gradually ramping up the program voltage by the voltage generator and detecting the program current by the current detector; discovering the maximum of the program current to be a reference current; continuing to ramp up the program voltage by the voltage generator and determining whether the program current detected by the current detector is not less than the reference current; controlling the voltage generator to stop generating the program voltage when the program current is not less than the reference current.Type: GrantFiled: June 23, 2016Date of Patent: April 11, 2017Assignee: Winbond Electronics Corp.Inventors: Lih-Wei Lin, Tsung-Huan Tsai, Chia-Hung Lin, I-Hsien Tseng, Ju-Chieh Cheng
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Publication number: 20170011798Abstract: A memory-programming device includes a voltage generator, a resistive random-access memory, a current detector, and a controller. The voltage generator is configured to generate a program voltage. The resistive random-access memory receives the program voltage to generate a program current. The current detector detects the program current. The controller executes a program procedure. The program procedure includes: gradually ramping up the program voltage by the voltage generator and detecting the program current by the current detector; discovering the maximum of the program current to be a reference current; continuing to ramp up the program voltage by the voltage generator and determining whether the program current detected by the current detector is not less than the reference current; controlling the voltage generator to stop generating the program voltage when the program current is not less than the reference current.Type: ApplicationFiled: June 23, 2016Publication date: January 12, 2017Inventors: Lih-Wei LIN, Tsung-Huan TSAI, Chia-Hung LIN, I-Hsien TSENG, Ju-Chieh CHENG
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Patent number: 9543010Abstract: A measurement system including a testing machine and a resistive memory is provided. The resistive memory includes a first storage cell. The first storage cell includes a transistor and a variable resistor. During a specific period, the testing machine provides a write voltage to change the state of the variable resistor. During a maintaining period, the testing machine maintains the level of the write voltage and measures the current passing through the variable resistor. When the current passing through the variable resistor does not arrive at a pre-determined value, the testing machine increases the level of the write voltage. Furthermore, a resistive memory utilizing the testing machine is also provided.Type: GrantFiled: February 9, 2016Date of Patent: January 10, 2017Assignee: WINBOND ELECTRONICS CORP.Inventors: Lih-Wei Lin, Chia-Hung Lin, Tsung-Huan Tsai, Ju-Chieh Cheng, I-Hsien Tseng
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Publication number: 20160276027Abstract: A resistive memory and a data writing method for a resistive memory cell thereof are provided. The method includes: receiving and decoding a column address signal for generating a decoded result, and providing a word line voltage to a word line of the resistive memory cell; providing a constant current to one of a bit line and a source line of the resistive memory cell, and coupling a reference ground voltage to another one of the bit line and the source line of the resistive memory cell.Type: ApplicationFiled: December 22, 2015Publication date: September 22, 2016Inventors: Lih-Wei Lin, I-Hsien Tseng, Ju-Chieh Cheng, Chia-Hung Lin, Tsung-Huan Tsai, Po-Wei Huang
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Publication number: 20160240268Abstract: A measurement system including a testing machine and a resistive memory is provided. The resistive memory includes a first storage cell. The first storage cell includes a transistor and a variable resistor. During a specific period, the testing machine provides a write voltage to change the state of the variable resistor. During a maintaining period, the testing machine maintains the level of the write voltage and measures the current passing through the variable resistor. When the current passing through the variable resistor does not arrive at a pre-determined value, the testing machine increases the level of the write voltage. Furthermore, a resistive memory utilizing the testing machine is also provided.Type: ApplicationFiled: February 9, 2016Publication date: August 18, 2016Inventors: LIH-WEI LIN, CHIA-HUNG LIN, TSUNG-HUAN TSAI, JU-CHIEH CHENG, I-HSIEN TSENG
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Publication number: 20100041192Abstract: A method for preparing a multi-level flash memory structure comprises the steps of forming a protrusion in a semiconductor substrate, forming a plurality of storage structures at the sides of the protrusion, forming a dielectric layer overlying the storage structures and the protrusion of the semiconductor substrate, forming a gate structure on the dielectric layer, and forming a plurality of diffusion regions at the sides of the protrusion. Each of the storage structures includes a charge-trapping site and an insulation structure isolating the charge-trapping site from the semiconductor substrate.Type: ApplicationFiled: August 12, 2008Publication date: February 18, 2010Applicant: PROMOS TECHNOLOGIES INC.Inventors: Lih Wei Lin, Wei Sheng Hsu
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Publication number: 20100020599Abstract: A multi-level flash memory comprises a semiconductor substrate, a gate structure having a lower block positioned in the semiconductor substrate and an upper block positioned on the semiconductor substrate, and a plurality of storage structures separated by the gate structure. The upper block connects to the lower block of the gate structure, and each of the storage structures includes a charge-trapping site and an insulation structure surrounding the charge-trapping site.Type: ApplicationFiled: July 23, 2008Publication date: January 28, 2010Applicant: PROMOS TECHNOLOGIES INC.Inventors: LIH WEI LIN, WEI SHENG HSU, YAN RU YANG, YEN WEN CHEN
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Publication number: 20100022058Abstract: A method for preparing a multi-level flash memory comprising the steps of forming a recess in a semiconductor substrate, forming a plurality of storage structures at the sides of the recess, and forming a gate structure having a lower block in the recess and an upper block on the lower block. The storage structures are separated by the gate structure, and each of the storage structures includes a charge-trapping site and an insulation structure surrounding the charge-trapping site.Type: ApplicationFiled: July 23, 2008Publication date: January 28, 2010Applicant: PROMOS TECHNOLOGIES INC.Inventors: LIH WEI LIN, WEI SHENG HSU, YAN RU YANG, YEN WEN CHEN
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Publication number: 20100019309Abstract: A multi-level flash memory structure comprises a semiconductor substrate having a protrusion, a plurality of storage structures separated by the protrusion, a dielectric layer overlying the storage structures and the protrusion of the semiconductor substrate, a gate structure positioned on the dielectric layer, and several diffusion regions positioned at the sides of the protrusion. Each of the storage structures includes a charge-trapping site and an insulation structure isolating the charge-trapping site from the semiconductor substrate.Type: ApplicationFiled: July 23, 2008Publication date: January 28, 2010Applicant: PROMOS TECHNOLOGIES INC.Inventors: LIH WEI LIN, WEI SHENG HSU
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Patent number: 7050344Abstract: A failure test method of word line-bit line short circuit in a split gate flash memory is provided. A well leakage-current test is performed to identify a sector with a failed memory cell. After being programmed, memory cells in the sector undergo a first read operation to generate a first bit map of the sector. After being erased, these memory cells in the sector undergo a second read operation to generate a second bit map of the sector. The first bit map and the second bit map are overlaid to identify the actual address of the failed memory cell.Type: GrantFiled: November 4, 2004Date of Patent: May 23, 2006Assignee: ProMOS Technologies Inc.Inventors: Chih-Hung Cho, Ming-Shiahn Tsai, Shih-Tse Hsu, Lih-Wei Lin
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Publication number: 20060098505Abstract: A failure test method of word line-bit line short circuit in a split gate flash memory is provided. A well leakage-current test is performed to identify a sector with a failed memory cell. After being programmed, memory cells in the sector undergo a first read operation to generate a first bit map of the sector. After being erased, these memory cells in the sector undergo a second read operation to generate a second bit map of the sector. The first bit map and the second bit map are overlaid to identify the actual address of the failed memory cell.Type: ApplicationFiled: November 4, 2004Publication date: May 11, 2006Inventors: Chih-Hung Cho, Ming-Shiahn Tsai, Shih-Tse Hsu, Lih-Wei Lin