Patents by Inventor Lin-Fwu Chen

Lin-Fwu Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High-voltage selecting circuit which can generate an output voltage without a voltage drop
    Patent number: 8120984
    Abstract: A high-voltage selecting circuit generates an output voltage with no voltage drop by means of an auxiliary NMOS transistor turning on the corresponding selecting PMOS transistor of the high-voltage selecting circuit when the voltage levels of a first input voltage and a second input voltage are equal. In addition, when one of the first input voltage and the second input voltage is higher than the other one, the high-voltage selecting circuit avoids the leakage current by means of an auxiliary PMOS transistor turning off the corresponding selecting PMOS transistor of the high-voltage selecting circuit. In this way, the high-voltage selecting circuit can correctly generate the output voltage according to the first input voltage and the second input voltage, and avoid the leakage current at the same time.
    Type: Grant
    Filed: March 23, 2010
    Date of Patent: February 21, 2012
    Assignee: eMemory Technology Inc.
    Inventors: Shao-Chang Huang, Wei-Yao Lin, Tang-Lung Lee, Kun-Wei Chang, Lin-Fwu Chen, Wen-Hao Lee, Luan-Yi Yen, Yu-Chun Chang
  • High-voltage selecting circuit which can generate an output voltage without a voltage drop
    Publication number: 20110235454
    Abstract: A high-voltage selecting circuit generates an output voltage with no voltage drop by means of an auxiliary NMOS transistor turning on the corresponding selecting PMOS transistor of the high-voltage selecting circuit when the voltage levels of a first input voltage and a second input voltage are equal. In addition, when one of the first input voltage and the second input voltage is higher than the other one, the high-voltage selecting circuit avoids the leakage current by means of an auxiliary PMOS transistor turning off the corresponding selecting PMOS transistor of the high-voltage selecting circuit. In this way, the high-voltage selecting circuit can correctly generate the output voltage according to the first input voltage and the second input voltage, and avoid the leakage current at the same time.
    Type: Application
    Filed: March 23, 2010
    Publication date: September 29, 2011
    Inventors: Shao-Chang Huang, Wei-Yao Lin, Tang-Lung Lee, Kun-Wei Chang, Lin-Fwu Chen, Wen-Hao Lee, Luan-Yi Yen, Yu-Chun Chang