Abstract: Provided are devices for camera cleaning and flare reduction for vehicles, which can include a cleaning device for cleaning a transparent window of a housing containing a camera system. The devices can include optical panels with different properties that can be moved in front of the transparent window for flare reduction. Methods are provided which can include analyzing at least one image to determine a presence of an optical flare within the at least one image, and, based on detecting the optical flare, causing at least one optical panel to be moved into a position in front of a lens of the imaging device. Computer program products are also provided.

Abstract: A light-emitting element includes a pair of electrodes, a first light-emitting unit, a second light-emitting unit, and a charge generation layer. The first light-emitting unit, between the pair of electrodes, and the first light-emitting unit, includes a first light-emitting layer. The second light-emitting unit, between the pair of electrodes, includes a second light-emitting layer. A first luminescent layer includes a first main body material, a second main body material, a first guest material, and a first auxiliary material, and the first main body material forms a first excimer complex with the second main body material. A first excited triplet state energy level of the first auxiliary material is lower than a first excited triplet state energy level of the first excimer complex, and the first excited triplet state energy level of the first auxiliary material is higher than that of the first guest material.

Abstract: Disclosed herein is a flexible sensing interface, comprising: a sensor, comprising: a core; an inner electrode in the form of a conductive material in contact with the core; an inner dielectric material substantially encasing the inner electrode; an outer electrode in the form of a conductive material in contact with the inner dielectric material and in electrical communication with the inner electrode; and an outer dielectric material substantially encasing the outer electrode; wherein the inner dielectric material and the outer dielectric material comprise an elastic material. Also disclosed herein are systems and methods for making and using the same.

Abstract: A semiconductor device structure is provided. The device includes one or more first semiconductor layers, each first semiconductor layer of the one or more first semiconductor layers is surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material.

Abstract: A method for manufacturing a memory device is provided. The method includes etching an opening in a first dielectric layer; forming a bottom electrode, a resistance switching element, and a top electrode in the opening in the first dielectric layer; forming a second dielectric layer over the bottom electrode, the resistance switching element, and the top electrode; and forming an electrode via connected to a top surface of the top electrode in the second dielectric layer.

Abstract: A projection screen includes an optical collimating layer and a surface diffusion layer which are arranged in sequence. A grating absorption layer for absorbing ambient light from various directions except a projection light direction is also provided between the optical collimating layer and the surface diffusion layer. The grating absorption layer includes a plurality of light-absorption ring-shaped units with different radii. The plurality of light-absorption ring-shaped units are arranged in a concentric ring. Each of the light-absorption ring-shaped units consists of a plurality of gratings arranged in the circumferential direction of the concentric ring. By taking a vertical symmetrical center line of the projection screen as a center, in a direction extending along the circumferential direction of the concentric ring to the left side and the right side of the projection screen, the distance between two adjacent gratings in the same light-absorption ring-shaped unit gradually increases.

Abstract: A local apparatus is configured to perform resolution on a conflict field generated by code files of a plurality of versions, and send a conflict resolution result to the service apparatus. The conflict field includes at least one conflict block, and the conflict resolution result includes at least one of a resolution result of a local resolvable conflict block and an identifier of a local irresolvable conflict block. The remote apparatus is configured to obtain the conflict resolution result from the service apparatus, generate a collaborative processing window based on the conflict resolution result, and receive a result of processing the conflict resolution result by a remote user based on the collaborative processing window.

Abstract: A data transmission method includes receiving, by first UE, bearer configuration information sent by a serving node; and performing, by the first UE, bearer configuration. A data transmission method, includes: sending, by a first base station, a sidelink (SL) data forwarding request to a second base station; and receiving, by the first base station, an SL data forwarding response sent by the second base station.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: The present disclosure provides a testis-targeted lycopene (LYC)/ZIF-90 nanocomposite and a preparation method and use thereof, belonging to the technical field of targeted drugs. In the present disclosure, a ZIF-90 metal-organic framework (MOF) material is combined with LYC through aldol condensation; when entering areas of inflammatory response and oxidative stress response, ZIF-90 may disintegrate and collapse in a slightly-acidic environment, releasing the LYC, thereby avoiding easy oxidation of the LYC and improving a bioavailability of the LYC; in addition, the disintegrated and collapsed ZIF-90 may also be utilized by organisms, thus greatly reducing a damage to the organisms. Moreover, the LYC/ZIF-90 nanocomposite is further loaded with follicle-stimulating hormone (FSH).

Abstract: Embodiments of the present disclosure relate to methods, devices and computer readable media for communication. A terminal device transmits uplink data in an inactive state to a network device, and if a resume of a connection with the network device is to be performed at a cell where the transmission has been performed, the terminal device performs the resume of the connection by at least one of the following: maintaining, in a PDCP re-establishment, a state variable of PDCP entities of UM DRBs or SRBs; or at least one of initiating a PDCP recovery for at least DRBs supporting a transmission in the inactive state or discarding PDCP SDUs and PDCP PDUs for SRBs supporting a transmission in the inactive state. In this way, security during a SDT procedure can be enhanced.

Abstract: A keyswitch includes a board, a cap located above the board, a membrane circuit board disposed on the board to make first and second engaging structures of the board protrude from first and second holes of the membrane circuit board respectively, and a lifting device. The lifting device is connected to the cap and the board and includes first and second support members. The first support member is movably connected to the cap and has a pivot end portion. The pivot end portion is movably connected to the first and second engaging structures and has a first abutting portion extending toward edges of the first and second holes along a pivot axis of the first engaging structure. The first abutting portion abuts on the membrane circuit board. The second support member rotatably intersects with the first support member and is movably connected to the cap and the board.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.

Abstract: A semiconductor device includes a substrate, a first dielectric layer, a second dielectric layer, and a third dielectric layer. The first dielectric layer is disposed on the substrate, around a first metal interconnection. The second dielectric layer is disposed on the first dielectric layer, around a via and a second metal interconnection. The second metal interconnection directly contacts the first metal interconnection. The third dielectric layer is disposed on the second dielectric layer, around a first magnetic tunneling junction (MTJ) structure and a third metal interconnection. The third metal interconnection directly contacts top surfaces of the first MTJ structure and the second metal interconnection, and the first MTJ structure directly contacts the via.

Abstract: A semiconductor memory device includes a substrate having a memory area and a logic circuit area thereon, a first interlayer dielectric layer on the substrate, and a second interlayer dielectric layer on the substrate. An embedded memory cell structure is disposed within the memory area between the first interlayer dielectric layer and the second interlayer dielectric layer. The second interlayer dielectric layer includes a first portion covering the embedded memory cell structure within the memory area and a second portion covering the logic circuit area. A top surface of the first portion is coplanar with a top surface of the second portion.

Abstract: A hierarchical health index evaluation method for an intelligent substation includes: obtaining a basic health index of a device based on static information and dynamic information of the device; obtaining a device correlation based on a communication connection relationship between the device and another device, and correcting the basic health index of the device based on the device correlation to obtain a health index of the device; obtaining a layer-based health index of a layer based on a device health index and a device importance weight of the layer; obtaining a whole-station health index of an intelligent substation based on a layer-based health index of each layer and a sum of device importance weights of each layer; and regulating the intelligent substation based on a health index of each device in the intelligent substation, the layer-based health index of each layer, and the whole-station health index.

Abstract: This application provides a method of generating a description for a picture set performed at a computer device, and a storage medium. The method includes: acquiring a picture set to be processed; performing picture feature extraction on each picture in the picture set to acquire a picture feature corresponding to the picture, and forming a picture feature sequence corresponding to the picture set by using the picture features corresponding to the pictures; performing scene feature extraction on a picture feature sub-sequence corresponding to each scene in the picture feature sequence to acquire a scene feature corresponding to the scene, and forming a scene feature sequence corresponding to the picture set by using the scene features corresponding to the scenes; and generating textual description information of the picture set according to the picture feature sequence and the scene feature sequence that correspond to the picture set.

Abstract: The present invention discloses a extra thick hot rolled H section steel and a production method therefor. The extra thick hot rolled H section steel contains, by mass, the following chemical components: 0.04-0.11% of C, 0.10-0.40% of Si, 0.40-1.00% of Mn, 0.40-1.00% of Cr, 0.10-0.40% of Cu, 0.020-0.060% of Nb, 0.040-0.100% of V, 0.010-0.025% of Ti, 0.010-0.030% of Al, 0.0060-0.0120% of N, not more than 0.015% of P, not more than 0.005% of S, not more than 0.0060% of O, and the balance Fe and trace residual elements, wherein 0.090%?Nb+V+Ti?0.170%, 6.5?(V+Ti)/N?10.5, and 0.30%?CEV?0.48%. The extra thick hot rolled H section steel has a flange thickness of 90 mm-150 mm, has excellent comprehensive mechanical properties, and can well meet the needs for heavy supporting structural parts of high-rise buildings, large squares, bridge structures, etc.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.

Abstract: A method for fabricating semiconductor device includes the step of forming a magnetic tunneling junction (MTJ) on a substrate, in which the MTJ includes a pinned layer on the substrate, a barrier layer on the pinned layer, and a free layer on the barrier layer and the free layer includes a magnesium oxide (MgO) compound. According to an embodiment of the present invention, the free layer includes a first cap layer on the barrier layer, a spacer on the first cap layer, and a second cap layer on the spacer.