Abstract: In certain aspects, a method for controlling wafer stress is disclosed. A semiconductor film is formed on a backside of a wafer. The wafer is deformed by stress associated with a front-side semiconductor structure on a front side of the wafer opposite to the backside of the wafer. A laser application region of the semiconductor film is determined. A laser anneal process is performed in the laser application region of the semiconductor film.

Abstract: A semiconductor device includes a first die including a first stack of layers in a first region on a backside of the first die and a second stack of layers in a second region on the backside of the first die. The first stack of layers has a smaller number of different layers than the second stack of layers. A contact structure is formed in the first region on the backside of the first die. The contact structure extends through the first stack of layers and is configured to conductively connect a first conductive structure on a face side of the first die with a second conductive structure on the backside of the first die. The face side is opposite to the backside.

Abstract: In certain aspects, a method for controlling wafer stress is disclosed. A semiconductor film is formed on a backside of a wafer. The wafer is deformed by stress associated with a front-side semiconductor structure on a front side of the wafer opposite to the backside of the wafer. A laser application region of the semiconductor film is determined. A laser anneal process is performed in the laser application region of the semiconductor film.