Patents by Inventor Linard N. Karklin

Linard N. Karklin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7523027
    Abstract: A method and apparatus for inspecting a photolithography mask for defects is provided. The inspection method comprises providing a defect area image to an image simulator wherein the defect area image is an image of a portion of a photolithography mask, and providing a set of lithography parameters as a second input to the image simulator. The defect area image may be provided by an inspection tool which scans the photolithography mask for defects using a high resolution microscope and captures images of areas of the mask around identified potential defects. The image simulator generates a first simulated image in response to the defect area image and the set of lithography parameters. The first simulated image is a simulation of an image which would be printed on a wafer if the wafer were to be exposed to an illumination source directed through the portion of the mask.
    Type: Grant
    Filed: June 28, 2004
    Date of Patent: April 21, 2009
    Assignee: Synopsys, Inc.
    Inventors: Fang-Cheng Chang, Yao-Ting Wang, Yagyensh C. Pati, Linard N. Karklin
  • Publication number: 20040243320
    Abstract: A method and apparatus for inspecting a photolithography mask for defects is provided. The inspection method comprises providing a defect area image to an image simulator wherein the defect area image is an image of a portion of a photolithography mask, and providing a set of lithography parameters as a second input to the image simulator. The defect area image may be provided by an inspection tool which scans the photolithography mask for defects using a high resolution microscope and captures images of areas of the mask around identified potential defects. The image simulator generates a first simulated image in response to the defect area image and the set of lithography parameters. The first simulated image is a simulation of an image which would be printed on a wafer if the wafer were to be exposed to an illumination source directed through the portion of the mask.
    Type: Application
    Filed: June 28, 2004
    Publication date: December 2, 2004
    Applicant: NUMERICAL TECHNOLOGIES, INC.
    Inventors: Fang-Cheng Chang, Yao-Ting Wang, Yagyensh C. Pati, Linard N. Karklin
  • Patent number: 6757645
    Abstract: A method and apparatus for inspecting a photolithography mask for defects is provided. The inspection method comprises providing a defect area image to an image simulator wherein the defect area image is an image of a portion of a photolithography mask, and providing a set of lithography parameters as a second input to the image simulator. The defect area image may be provided by an inspection tool which scans the photolithography mask for defects using a high resolution microscope and captures images of areas of the mask around identified potential defects. The image simulator generates a first simulated image in response to the defect area image and the set of lithography parameters. The first simulated image is a simulation of an image which would be printed on a wafer if the wafer were to be exposed to an illumination source directed through the portion of the mask.
    Type: Grant
    Filed: August 7, 1998
    Date of Patent: June 29, 2004
    Assignee: Numerical Technologies, Inc.
    Inventors: Fang-Cheng Chang, Yao-Ting Wang, Yagyensh C. Pati, Linard N. Karklin