Abstract: Replacements of thick film pads with smaller, thinner, metal contacts or straps are used to eliminate many of the stress-related failure modes associated with the larger contact pads. These straps allow for a more simplified manufacturing process than that associated with an anchored I/O pad configuration. A single via, electrically connected to a plurality of vias in a substrate layer above, is introduced to enhance the reliability of the signal net, and provides for higher frequency applications through reduction in parasitic capacitance and electrical leakage. The straps are directionally located toward the substrate center. Once the locations of the internal strap vias are redirected to lower local distance-to-neutral points, still within the same I/O capture pad, and directed towards the center of the substrate, single vias are then placed at the strap end closest the substrate center.

Abstract: Replacements of thick film pads with smaller, thinner, metal contacts or straps are used to eliminate many of the stress-related failure modes associated with the larger contact pads. These straps allow for a more simplified manufacturing process than that associated with an anchored I/O pad configuration. A single via, electrically connected to a plurality of vias in a substrate layer above, is introduced to enhance the reliability of the signal net, and provides for higher frequency applications through reduction in parasitic capacitance and electrical leakage. The straps are directionally located toward the substrate center. Once the locations of the internal strap vias are redirected to lower local distance-to-neutral points, still within the same I/O capture pad, and directed towards the center of the substrate, single vias are then placed at the strap end closest the substrate center.

Abstract: A semiconductor interconnect connection mechanism for attaching individual surface mounted semiconductor objects to multichip products whereby at least a portion of the electrical pathway between different objects on the top surface of surface mounted devices is not located on the top surface.

Abstract: A semiconductor interconnecting mechanism, having

Abstract: A ceramic material suitable for packaging of large scale integrated circuit is produced by the process of forming a mixture of a powdered glass ceramic material which is a glassy precursor to cordierite ceramic material, formed by the steps which are as follows:a. Mix tetragonal phase material selected from the group consisting of zirconia or hafnia powder containing a stabilizing oxide compound selected from the group consisting of MgO, CaO and Y.sub.2 O.sub.3 and a glass frit powder or frit of a glassy precursor of cordierite glass ceramic to yield a suspension of solids. Preferably, a binder is included.b. Disperse the suspended solids to yield a dispersion of the zirconia or hafnia with the stabilizing oxide compound and the glassy precursor.c. Densify the dispersion of zirconia or hafnia with the stabilizing oxide compound and the glassy precursor by a sintering heat treatment at a temperature of about 840.degree. C.

Abstract: A ceramic material suitable for packaging of large scale integrated circuits is produced by the process of forming a mixture of a powdered glass ceramic material which is a glassy precursor to cordierite ceramic material, formed by the steps which are as follows:a. Mix tetragonal phase material selected from the group consisting of zirconia of hafnia powder containing a stabilizing oxide compound selected from the group consisting of MgO, CaO and Y.sub.2 O.sub.3 and a glass frit powder or frit of a glassy precursor of cordierite glass ceramic to yield a suspension of solids. Preferably, a binder is included.b. Disperse the suspended solids to yield a dispersion of the zirconia or hafnia with the stabilizing oxide compound and the glassy precursor.c. Densify the dispersion of zirconia or hafnia with the stabilizing oxide compound and the glassy precursor by a sintering heat treatment at a temperature of about 840.degree. C.

Abstract: A ceramic material suitable for packaging of large scale integrated circuits is produced by the process of forming a mixture of a powdered glass ceramic material which is a glassy precursor to cordierite ceramic material, formed by the steps which are as follows:a. Mix tetragonal phase material selected from the group consisitng of zirconia or hafnia powder containing a stabilizing oxide compound selected from the group consisting of MgO, CaO and Y.sub.2 O.sub.3 and a glass frit powder or frit of a glassy precursor of cordierite glass ceramic to yield a suspension of solids. Preferably, a binder is included.b. Disperse the suspended solids to yield a dispersion of the zirconia or hafnia with the stabilizing oxide compound and the glassy precursor.c. Densify the dispersion of zirconia or hafnia with the stabilizing oxide compound and the glassy precursor by a sintering heat treatment at a temperature of about 840.degree. C.