Patents by Inventor Linda Lindroos
Linda Lindroos has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11823976Abstract: An atomic layer deposition (ALD) process for depositing a fluorine-containing thin film on a substrate can include a plurality of super-cycles. Each super-cycle may include a metal fluoride sub-cycle and a reducing sub-cycle. The metal fluoride sub-cycle may include contacting the substrate with a metal fluoride. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant.Type: GrantFiled: September 15, 2022Date of Patent: November 21, 2023Assignee: ASM IP Holding, B.V.Inventors: Tom E. Blomberg, Linda Lindroos, Hannu Huotari
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Publication number: 20230085443Abstract: An atomic layer deposition (ALD) process for depositing a fluorine-containing thin film on a substrate can include a plurality of super-cycles. Each super-cycle may include a metal fluoride sub-cycle and a reducing sub-cycle. The metal fluoride sub-cycle may include contacting the substrate with a metal fluoride. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant.Type: ApplicationFiled: September 15, 2022Publication date: March 16, 2023Inventors: Tom E. Blomberg, Linda Lindroos, Hannu Huotari
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Patent number: 11450591Abstract: An atomic layer deposition (ALD) process for depositing a fluorine-containing thin film on a substrate can include a plurality of super-cycles. Each super-cycle may include a metal fluoride sub-cycle and a reducing sub-cycle. The metal fluoride sub-cycle may include contacting the substrate with a metal fluoride. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant.Type: GrantFiled: April 2, 2020Date of Patent: September 20, 2022Assignee: ASM IP HOLDING B.V.Inventors: Tom E. Blomberg, Linda Lindroos, Hannu Huotari
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Publication number: 20200235037Abstract: An atomic layer deposition (ALD) process for depositing a fluorine-containing thin film on a substrate can include a plurality of super-cycles. Each super-cycle may include a metal fluoride sub-cycle and a reducing sub-cycle. The metal fluoride sub-cycle may include contacting the substrate with a metal fluoride. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant.Type: ApplicationFiled: April 2, 2020Publication date: July 23, 2020Inventors: Tom E. Blomberg, Linda Lindroos, Hannu Huotari
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Patent number: 10699899Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.Type: GrantFiled: August 20, 2018Date of Patent: June 30, 2020Assignee: ASM International N.V.Inventors: Raija H. Matero, Linda Lindroos, Hessel Sprey, Jan Willem Maes, David de Roest, Dieter Pierreux, Kees van der Jeugd, Lucia D'Urzo, Tom E. Blomberg
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Patent number: 10643925Abstract: An atomic layer deposition (ALD) process for depositing a fluorine-containing thin film on a substrate can include a plurality of super-cycles. Each super-cycle may include a metal fluoride sub-cycle and a reducing sub-cycle. The metal fluoride sub-cycle may include contacting the substrate with a metal fluoride. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant.Type: GrantFiled: April 17, 2014Date of Patent: May 5, 2020Assignee: ASM IP Holding B.V.Inventors: Tom E. Blomberg, Linda Lindroos, Hannu Huotari
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Publication number: 20190103266Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.Type: ApplicationFiled: August 20, 2018Publication date: April 4, 2019Inventors: Raija H. Matero, Linda Lindroos, Hessel Sprey, Jan Willem Maes, David de Roest, Dieter Pierreux, Kees van der Jeugd, Lucia D'Urzo, Tom E. Blomberg
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Patent number: 10056249Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.Type: GrantFiled: November 22, 2016Date of Patent: August 21, 2018Assignee: ASM International N.V.Inventors: Raija H. Matero, Linda Lindroos, Hessel Sprey, Jan Willem Maes, David de Roest, Dieter Pierreux, Kees van der Jeugd, Lucia D'Urzo, Tom E. Blomberg
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Publication number: 20170140918Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.Type: ApplicationFiled: November 22, 2016Publication date: May 18, 2017Inventors: Raija H. Matero, Linda Lindroos, Hessel Sprey, Jan Willem Maes, David de Roest, Dieter Pierreux, Kees van der Jeugd, Lucia D'Urzo, Tom E. Blomberg
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Patent number: 9514934Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.Type: GrantFiled: March 13, 2015Date of Patent: December 6, 2016Assignee: ASM International N.V.Inventors: Raija H. Matero, Linda Lindroos, Hessel Sprey, Jan Willem Maes, David De Roest, Dieter Pierreux, Kees Van Der Jeugd, Lucia D'Urzo, Tom E. Blomberg
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Publication number: 20150303101Abstract: An atomic layer deposition (ALD) process for depositing a fluorine-containing thin film on a substrate can include a plurality of super-cycles. Each super-cycle may include a metal fluoride sub-cycle and a reducing sub-cycle. The metal fluoride sub-cycle may include contacting the substrate with a metal fluoride. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant.Type: ApplicationFiled: April 17, 2014Publication date: October 22, 2015Inventors: Tom E. Blomberg, Linda Lindroos, Hannu Huotari
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Publication number: 20150249005Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.Type: ApplicationFiled: March 13, 2015Publication date: September 3, 2015Inventors: RAIJA H. MATERO, LINDA LINDROOS, HESSEL SPREY, JAN WILLEM MAES, DAVID DE ROEST, DIETER PIERREUX, KEES VAN DER JEUGD, LUCIA D'URZO, TOM E. BLOMBERG
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Patent number: 9006112Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.Type: GrantFiled: October 11, 2012Date of Patent: April 14, 2015Assignee: ASM International N.V.Inventors: Raija H. Matero, Linda Lindroos, Hessel Sprey, Jan Willem Maes, David de Roest, Dieter Pierreux, Kees van der Jeugd, Lucia D'Urzo, Tom E. Blomberg
