Abstract: A gas injector for a substrate processing system includes a first injector housing including a base portion defining a first gas flow channel; a projecting portion extending from the base portion; and a second gas flow channel extending through the base portion and the projecting portion. The gas injector includes a second injector housing including a first cavity including a first opening, a second opening and a first plurality of gas through holes arranged around the second opening. The first gas flow channel communicates with the first plurality of gas through holes. The second injector housing includes a second cavity that includes a second plurality of gas through holes and that extends from the second opening of the first cavity. The second gas flow channel communicates with the second plurality of gas through holes. Gas in the first and second gas flow channels flows into a processing chamber without mixing.

Abstract: Apparatuses for processing substrates are provided herein. Apparatuses include a plasma etch chamber having a showerhead and pedestal for holding a substrate having silicon nitride, at least one outlet for coupling to a vacuum, a solid non-functional silicon source, and a plasma generator. A solid silicon source may be upstream of a substrate, such as at or near a showerhead of a process chamber, or in a remote plasma generator. Apparatuses also include a plasma etch chamber, at least one outlet, a solid non-functional silicon source, a plasma generator, and a controller for controlling operations including instructions for causing introduction of a fluorinating gas and causing ignition of a plasma to form fluorine-containing etching species in the plasma etch chamber.

Abstract: Methods of selectively etching silicon nitride on a semiconductor substrate by providing silicon to the plasma to achieve high etch selectivity of silicon nitride to silicon-containing materials are provided. Methods involve providing silicon from a solid or fluidic silicon source or both. A solid silicon source may be upstream of a substrate, such as at or near a showerhead of a process chamber, or in a remote plasma generator. A silicon gas source may be flowed to the plasma during etch.

Abstract: A gas injector for a substrate processing system includes a first injector housing including a base portion defining a first gas flow channel; a projecting portion extending from the base portion; and a second gas flow channel extending through the base portion and the projecting portion. The gas injector includes a second injector housing including a first cavity including a first opening, a second opening and a first plurality of gas through holes arranged around the second opening. The first gas flow channel communicates with the first plurality of gas through holes. The second injector housing includes a second cavity that includes a second plurality of gas through holes and that extends from the second opening of the first cavity. The second gas flow channel communicates with the second plurality of gas through holes. Gas in the first and second gas flow channels flows into a processing chamber without mixing.

Abstract: Method and apparatus for cleaning a substrate having a plurality of high-aspect ratio openings are disclosed. A substrate can be provided in a plasma processing chamber, where the substrate includes the plurality of high-aspect ratio openings, the plurality of high-aspect ratio openings are defined by vertical structures having alternating layers of oxide and nitride or alternating layers of oxide and polysilicon. The substrate can include a silicon oxide layer over a damaged or amorphous silicon layer in the high-aspect ratio openings. To remove the silicon oxide layer, a bias power can be applied in the plasma processing chamber at a low pressure, and a fluorine-based species can be used to etch the silicon oxide layer. To remove the underlying damaged or amorphous silicon layer, a source power and a bias power can be applied in the plasma processing chamber, and a hydrogen-based species can be used to etch the damaged or amorphous silicon layer.

Abstract: Methods of selectively etching silicon nitride on a semiconductor substrate by providing silicon to the plasma to achieve high etch selectivity of silicon nitride to silicon-containing materials are provided. Methods involve providing silicon from a solid or fluidic silicon source or both. A solid silicon source may be upstream of a substrate, such as at or near a showerhead of a process chamber, or in a remote plasma generator. A silicon gas source may be flowed to the plasma during etch.

Abstract: Methods of selectively etching silicon nitride are provided. Silicon nitride layers are exposed to a fluorinating gas and nitric oxide (NO), which may be formed by reacting nitrous oxide (N2O) and oxygen (O2) in a plasma. Methods also include defluorinating the substrate prior to turning off the plasma to increase etch selectivity of silicon nitride.

Abstract: Method and apparatus for cleaning a substrate having a plurality of high-aspect ratio openings are disclosed. A substrate can be provided in a plasma processing chamber, where the substrate includes the plurality of high-aspect ratio openings, the plurality of high-aspect ratio openings are defined by vertical structures having alternating layers of oxide and nitride or alternating layers of oxide and polysilicon. The substrate can include a silicon oxide layer over a damaged or amorphous silicon layer in the high-aspect ratio openings. To remove the silicon oxide layer, a bias power can be applied in the plasma processing chamber at a low pressure, and a fluorine-based species can be used to etch the silicon oxide layer. To remove the underlying damaged or amorphous silicon layer, a source power and a bias power can be applied in the plasma processing chamber, and a hydrogen-based species can be used to etch the damaged or amorphous silicon layer.

Abstract: An aqueous well completion/workover fluid, including a surfactant, at least one salt and an alkaline material, wherein the surfactant comprises a mixture of a phosphate ester and a non ionic ethoxylated alcohol, wherein the fluid has a pH between 6 and 8, and wherein the fluid generates an interfacial tension with crude oil of less than or equal to 1 dyne/cm. The fluid is not harmful to a formation if it penetrates the formation, and further exhibits an excellent detergency which can be beneficial as well.

Abstract: An aqueous well completion/workover fluid, including a surfactant, at least one salt and an alkaline material, wherein the surfactant comprises a mixture of a phosphate ester and a non ionic ethoxylated alcohol, wherein the fluid has a pH between 6 and 8, and wherein the fluid generates an interfacial tension with crude oil of less than or equal to 1 dyne/cm. The fluid is not harmful to a formation if it penetrates the formation, and further exhibits an excellent detergency which can be beneficial as well.

Abstract: A drilling fluid, comprising an aqueous continuous phase, and a surfactant system comprising a mixture of an ester phosphate and a non-ionic ethoxylated alcohol. The drilling fluid may also contain one or more of at least one salt, an alkaline material, a viscosifying agent, a starch or starch derivative, a bridging agent, a weighting material, and a diesel oil or non-aromatic oil.

Abstract: An aqueous well completion/workover fluid, including a surfactant, at least one salt and an alkaline material, wherein the surfactant comprises a mixture of a phosphate ester and a non ionic ethoxylated alcohol, wherein the fluid has a pH between 6 and 8, and wherein the fluid generates an interfacial tension with crude oil of less than or equal to 1 dyne/cm. The fluid is not harmful to a formation if it penetrates the formation, and further exhibits an excellent detergency which can be beneficial as well.

Abstract: The manually pushed swing involves a vertical pole that is anchored into the ground via a concrete base, wherein a swing top mounts atop said pole and enables a plurality of swings seats and push handles to be connected thereon. The push handles enable a non-occupant to propel the plurality of swing seats around the pole via a bearing. The manually pushed swing is ideally suited for outdoor use.

Abstract: A method of forming a thin film stack on a substrate, wherein the thin film stack includes at least a polysilicon layer and an oxide layer; forming a hardmask layer on the thin film stack; forming an anti-reflective coating (ARC) layer on the hardmask layer; patterning the ARC layer; etching the hardmask layer using the patterned ARC layer as a mask; and etching the thin film stack using the hardmask layer as a mask.