Abstract: The invention is directed to highly crystalline, frit-sintered glass-ceramic compositions having a coefficient of thermal expansion in the range of 85-115×10?7° C. The primary crystal phases of the glass-ceramics of the invention possess a cyclosilicate structure. The glass-ceramic of the invention are useful as metal-to-metal, metal-to-ceramic and ceramic-to-ceramic sealing agents, and also as high-performance coating for metals and ceramics.

Abstract: A semiconductor-on-insulator structure including first and second layers which are attached to one another either directly or through one or more intermediate layers. The first layer includes a substantially single crystal germanium semiconductor material while the second layer comprises a glass or a glass-ceramic material having a linear coefficient thermal of expansion (25-300° C.) which is within the range of +/?20×10?7/° C. of the linear coefficient thermal of expansion of the germanium first layer.

Abstract: Geopolymer composite materials having low coefficient of thermal expansion are disclosed. The materials are useful in high temperature applications due to their low coefficient of thermal expansion and high strength. Also disclosed is a boron modified water glass geopolymer composition that is compatible with ceramic particulate material such as cordierite and fused silica. The geopolymer composite may be extruded to form structures such as honeycomb monoliths, flow filters or used as a plugging or skinning cement and may be fired at temperatures at or below 1100° C. Both the structures and the cement have high green and fired strength, a low coefficient of thermal expansion, and good acid durability. The cost of manufacturing objects using the material of the present invention is substantially reduced, in comparison with typically production methods of cordierite based bodies, due to the substantially shortened firing times.

Abstract: The present invention relates to semiconductor-on-insulator structures having strained semiconductor layers. According to one embodiment of the invention, a semiconductor-on-insulator structure has a first layer including a semiconductor material, attached to a second layer including a glass or glass-ceramic, with the strain point of the glass or glass-ceramic equal to or greater than about 800° C.

Abstract: The present invention relates to semiconductor-on-insulator structures having strained semiconductor layers. According to one embodiment of the invention, a semiconductor-on-insulator structure has a first layer including a semiconductor material, attached to a second layer including a glass or glass-ceramic, with the CTEs of the semiconductor and glass or glass-ceramic selected such that the first layer is under tensile strain. The present invention also relates to methods for making strained semiconductor-on-insulator layers.

Abstract: A substrate for flat panel display glasses comprising a glass the P2O5—SiO2—Al2O3 ternary system which yields stable glasses exhibiting high strain point temperatures, resistance to devitrification, good chemical durability, excellent dielectric properties, coefficients of thermal expansion that can be tailored to match that of silicon, and having liquidus viscosities that enable forming by conventional methods. The glass comprises the following composition as calculated in weight percent on an oxide basis: P2O5 33-75%, SiO2 2-52%, Al2O3 8-35%.