Patents by Inventor Ling-Fu Nieh
Ling-Fu Nieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230365903Abstract: A semiconductor cleaning solution for cleaning a surface of a semiconductor device, and a method of use and a method of manufacture of the cleaning solution are disclosed. In an embodiment, a material is polished away from a first surface of the semiconductor device and the first surface is cleaned with the cleaning solution. The cleaning solution may include a host having at least one ring. The host may have a hydrophilic exterior and a hydrophobic interior.Type: ApplicationFiled: July 26, 2023Publication date: November 16, 2023Inventors: Pinlei Edmund Chu, Chun-Wei Hsu, Ling-Fu Nieh, Chi-Jen Liu, Liang-Guang Chen, Yi-Sheng Lin
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Patent number: 11773353Abstract: A semiconductor cleaning solution for cleaning a surface of a semiconductor device, and a method of use and a method of manufacture of the cleaning solution are disclosed. In an embodiment, a material is polished away from a first surface of the semiconductor device and the first surface is cleaned with the cleaning solution. The cleaning solution may include a host having at least one ring. The host may have a hydrophilic exterior and a hydrophobic interior.Type: GrantFiled: February 10, 2021Date of Patent: October 3, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Pinlei Edmund Chu, Chun-Wei Hsu, Ling-Fu Nieh, Chi-Jen Liu, Liang-Guang Chen, Yi-Sheng Lin
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Patent number: 11121028Abstract: Semiconductor devices and methods of forming are provided. In some embodiments the semiconductor device includes a substrate, and a dielectric layer over the substrate. A first conductive feature is included in the dielectric layer, the first conductive feature comprising a first number of material layers. A second conductive feature is included in the dielectric layer, the second conductive feature comprising a second number of material layers, where the second number is higher than the first number. A first electrical connector is included overlying the first conductive feature.Type: GrantFiled: September 13, 2019Date of Patent: September 14, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Wei Hsu, Ling-Fu Nieh, Pinlei Edmund Chu, Chi-Jen Liu, Yi-Sheng Lin, Ting-Hsun Chang, Chia-Wei Ho, Liang-Guang Chen
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Patent number: 11114339Abstract: A method of manufacturing a device includes exposing at least one of a source/drain contact plug or a gate contact plug to a metal ion source solution during a manufacturing process, wherein a constituent metal of a metal ion in the metal ion source solution and the at least one source/drain contact plug or gate contact plug is the same. If the source/drain contact plug or the gate contact plug is formed of cobalt, the metal ion source solution includes a cobalt ion source solution. If the source/drain contact plug or the gate contact plug is formed of tungsten, the metal ion source solution includes a tungsten ion source solution.Type: GrantFiled: November 18, 2019Date of Patent: September 7, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ling-Fu Nieh, Chun-Wei Hsu, Pinlei Edmund Chu, Chi-Jen Liu, Liang-Guang Chen, Yi-Sheng Lin
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Publication number: 20210163859Abstract: A semiconductor cleaning solution for cleaning a surface of a semiconductor device, and a method of use and a method of manufacture of the cleaning solution are disclosed. In an embodiment, a material is polished away from a first surface of the semiconductor device and the first surface is cleaned with the cleaning solution. The cleaning solution may include a host having at least one ring. The host may have a hydrophilic exterior and a hydrophobic interior.Type: ApplicationFiled: February 10, 2021Publication date: June 3, 2021Inventors: Pinlei Edmund Chu, Chun-Wei Hsu, Ling-Fu Nieh, Chi-Jen Liu, Liang-Guang Chen, Yi-Sheng Lin
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Patent number: 10961487Abstract: A semiconductor cleaning solution for cleaning a surface of a semiconductor device, and a method of use and a method of manufacture of the cleaning solution are disclosed. In an embodiment, a material is polished away from a first surface of the semiconductor device and the first surface is cleaned with the cleaning solution. The cleaning solution may include a host having at least one ring. The host may have a hydrophilic exterior and a hydrophobic interior.Type: GrantFiled: October 5, 2018Date of Patent: March 30, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Pinlei Edmund Chu, Chun-Wei Hsu, Ling-Fu Nieh, Chi-Jen Liu, Liang-Guang Chen, Yi-Sheng Lin
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Patent number: 10636701Abstract: Semiconductor devices and methods of forming are provided. In some embodiments the method includes forming a dielectric layer over a substrate and patterning the dielectric layer to form a first recess. The method may also include depositing a first layer in the first recess and depositing a second layer over the first layer, the second layer being different than the first layer. The method may also include performing a first chemical mechanical polish (CMP) process on the second layer using a first oxidizer and performing a second CMP process on remaining portions of the second layer and the first layer using the first oxidizer. The method may also include forming a first conductive element over the remaining portions of the first layer after the second CMP polish is performed.Type: GrantFiled: March 29, 2018Date of Patent: April 28, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Wei Hsu, Ling-Fu Nieh, Pinlei Edmund Chu, Chi-Jen Liu, Yi-Sheng Lin, Ting-Hsun Chang, Chia-Wei Ho, Liang-Guang Chen
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Publication number: 20200090997Abstract: A method of manufacturing a device includes exposing at least one of a source/drain contact plug or a gate contact plug to a metal ion source solution during a manufacturing process, wherein a constituent metal of a metal ion in the metal ion source solution and the at least one source/drain contact plug or gate contact plug is the same. If the source/drain contact plug or the gate contact plug is formed of cobalt, the metal ion source solution includes a cobalt ion source solution. If the source/drain contact plug or the gate contact plug is formed of tungsten, the metal ion source solution includes a tungsten ion source solution.Type: ApplicationFiled: November 18, 2019Publication date: March 19, 2020Inventors: Ling-Fu Nieh, Chun-Wei Hsu, Pinlei Edmund Chu, Chi-Jen Liu, Liang-Guang Chen, Yi-Sheng Lin
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Publication number: 20200006125Abstract: Semiconductor devices and methods of forming are provided. In some embodiments the semiconductor device includes a substrate, and a dielectric layer over the substrate. A first conductive feature is included in the dielectric layer, the first conductive feature comprising a first number of material layers. A second conductive feature is included in the dielectric layer, the second conductive feature comprising a second number of material layers, where the second number is higher than the first number. A first electrical connector is included overlying the first conductive feature.Type: ApplicationFiled: September 13, 2019Publication date: January 2, 2020Inventors: Chun-Wei Hsu, Ling-Fu Nieh, Pinlei Edmund Chu, Chi-Jen Liu, Yi-Sheng Lin, Ting-Hsun Chang, Chia-Wei Ho, Liang-Guang Chen
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Patent number: 10510601Abstract: A method of manufacturing a device includes exposing at least one of a source/drain contact plug or a gate contact plug to a metal ion source solution during a manufacturing process, wherein a constituent metal of a metal ion in the metal ion source solution and the at least one source/drain contact plug or gate contact plug is the same. If the source/drain contact plug or the gate contact plug is formed of cobalt, the metal ion source solution includes a cobalt ion source solution. If the source/drain contact plug or the gate contact plug is formed of tungsten, the metal ion source solution includes a tungsten ion source solution.Type: GrantFiled: August 28, 2018Date of Patent: December 17, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ling-Fu Nieh, Chun-Wei Hsu, Pinlei Edmund Chu, Chi-Jen Liu, Liang-Guang Chen, Yi-Sheng Lin
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Publication number: 20190161711Abstract: A semiconductor cleaning solution for cleaning a surface of a semiconductor device, and a method of use and a method of manufacture of the cleaning solution are disclosed. In an embodiment, a material is polished away from a first surface of the semiconductor device and the first surface is cleaned with the cleaning solution. The cleaning solution may include a host having at least one ring. The host may have a hydrophilic exterior and a hydrophobic interior.Type: ApplicationFiled: October 5, 2018Publication date: May 30, 2019Inventors: Pinlei Edmund Chu, Chun-Wei Hsu, Ling-Fu Nieh, Chi-Jen Liu, Liang-Guang Chen, Yi-Sheng Lin
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Publication number: 20190103308Abstract: Semiconductor devices and methods of forming are provided. In some embodiments the method includes forming a dielectric layer over a substrate and patterning the dielectric layer to form a first recess. The method may also include depositing a first layer in the first recess and depositing a second layer over the first layer, the second layer being different than the first layer. The method may also include performing a first chemical mechanical polish (CMP) process on the second layer using a first oxidizer and performing a second CMP process on remaining portions of the second layer and the first layer using the first oxidizer. The method may also include forming a first conductive element over the remaining portions of the first layer after the second CMP polish is performed.Type: ApplicationFiled: March 29, 2018Publication date: April 4, 2019Inventors: Chun-Wei Hsu, Ling-Fu Nieh, Pinlei Edmund Chu, Chi-Jen Liu, Yi-Sheng Lin, Ting-Hsun Chang, Chia-Wei Ho, Liang-Guang Chen
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Publication number: 20190096761Abstract: A method of manufacturing a device includes exposing at least one of a source/drain contact plug or a gate contact plug to a metal ion source solution during a manufacturing process, wherein a constituent metal of a metal ion in the metal ion source solution and the at least one source/drain contact plug or gate contact plug is the same. If the source/drain contact plug or the gate contact plug is formed of cobalt, the metal ion source solution includes a cobalt ion source solution. If the source/drain contact plug or the gate contact plug is formed of tungsten, the metal ion source solution includes a tungsten ion source solution.Type: ApplicationFiled: August 28, 2018Publication date: March 28, 2019Inventors: Ling-Fu Nieh, Chun-Wei Hsu, Pinlei Edmund Chu, Chi-Jen Liu, Liang-Guang Chen, Yi-Sheng Lin
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Patent number: 9812358Abstract: FinFET structures and methods of forming the same are disclosed. In a method, a recess is formed exposing a plurality of semiconductor fins on a wafer. A dummy contact material is formed in the recess. The dummy contact material contains carbon. The dummy contact material is cured with one or more baking steps. The one or more baking steps harden the dummy contact material. A first portion of the dummy contact material is replaced with an inter-layer dielectric. A second portion of the dummy contact material is replaced with a plurality of contacts. The plurality of contacts are electrically coupled to source/drain regions of the plurality of semiconductor fins.Type: GrantFiled: September 14, 2016Date of Patent: November 7, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yen-Chun Huang, Ting-Ting Chen, Yu-Chung Su, Ling-Fu Nieh, Pin-Chuan Su, Teng-Chun Tsai, Tai-Chun Huang, Joy Cheng