Abstract: A light-emitting diode includes a first type semiconductor layer, a stress relief layer disposed on the first type semiconductor layer and including at least one first repeating unit containing a first well layer and a first barrier layer that are alternately stacked, an active layer disposed on the stress relief layer and including at least one second repeating unit containing a second well layer and a second barrier layer that are alternately stacked, a second type semiconductor layer disposed on the active layer, a first electrode electrically connected to the first type semiconductor layer, and a second electrode electrically connected to the second type semiconductor layer. The first well layer is made of an In-containing material. The second well layer is made of an In-containing material. The second barrier layer is formed with multiple sub-layers, each of which is made of an Al-containing material.

Abstract: A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked potential barrier layers and potential well layers. The first capping layer is a semiconductor layer, and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has an aluminum mole fraction larger than that of each of the potential barrier layers, and the aluminum mole fraction of the first capping layer is larger than that of at least a portion of the electron barrier layer. A method for preparing the semiconductor light emitting device is also provided.

Abstract: An electronic device includes a display unit, a voltage generation unit, a grayscale adjustment unit, and an overdriving unit. The display unit has a relationship curve between the transmittance and the driving voltage. The relationship curve has a predetermined voltage value corresponding to the maximum transmittance. The voltage generation unit generates a first voltage according to a first grayscale, and generates a second voltage according to a second grayscale. The grayscale adjustment unit receives a first display grayscale value, and outputs the second grayscale value when the first display grayscale value is equal to the first grayscale. The overdriving unit overdrives the second voltage corresponding to the second grayscale to obtain a first target driving voltage, and it provides the first target driving voltage to the display unit.

Abstract: A light-emitting diode includes a first type semiconductor layer, a stress relief layer disposed on the first type semiconductor layer and including at least one first repeating unit containing a first well layer and a first barrier layer that are alternately stacked, an active layer disposed on the stress relief layer and including at least one second repeating unit containing a second well layer and a second barrier layer that are alternately stacked, a second type semiconductor layer disposed on the active layer, a first electrode electrically connected to the first type semiconductor layer, and a second electrode electrically connected to the second type semiconductor layer. The first well layer is made of an In-containing material. The second well layer is made of an In-containing material. The second barrier layer is formed with multiple sub-layers, each of which is made of an Al-containing material.

Abstract: A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked potential barrier layers and potential well layers. The first capping layer is a semiconductor layer, and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has an aluminum mole fraction larger than that of each of the potential barrier layers, and the aluminum mole fraction of the first capping layer is larger than that of at least a portion of the electron barrier layer. A method for preparing the semiconductor light emitting device is also provided.

Abstract: A nitride-based light-emitting diode (LED) device includes an n-type nitride semiconductor layer, an active layer disposed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer disposed on the active layer, and a defect control unit disposed between the n-type nitride semiconductor layer and the active layer. The defect control unit includes first, second and third defect control layers that are sequentially disposed on the n-type nitride semiconductor layer, and that have different doping concentrations. The third defect control layer includes one of Al-containing ternary nitride, Al-containing quaternary nitride, and a combination thereof.

Abstract: A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked potential barrier layers and potential well layers. The first capping layer is a semiconductor layer, and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has an aluminum mole fraction larger than that of each of the potential barrier layers, and the aluminum mole fraction of the first capping layer is larger than that of at least a portion of the electron barrier layer. A method for preparing the semiconductor light emitting device is also provided.

Abstract: A method for manufacturing a Ganoderma Lucidum fermented beverage product (GLfb) is provided. It has found that Ganoderma lucidum contains high quantity of natural Pyrroloquinoline Quinone (PQQ). Free radicals generated by ischemic or hypoxic conditions have been found to be a significant cause of myocardial damage leading to myocardial death. PQQ has been reported to act as a free radical scavenger. In particular, PQQ has been reported to be effective in neutralizing superoxide and hydroxyl radicals.

Abstract: A nitride-based light-emitting diode (LED) device includes an n-type nitride semiconductor layer, an active layer disposed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer disposed on the active layer, and a defect control unit disposed between the n-type nitride semiconductor layer and the active layer. The defect control unit includes first, second and third defect control layers that are sequentially disposed on the n-type nitride semiconductor layer, and that have different doping concentrations. The third defect control layer includes one of Al-containing ternary nitride, Al-containing quaternary nitride, and a combination thereof.

Abstract: A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked potential barrier layers and potential well layers. The first capping layer is a semiconductor layer, and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has an aluminum mole fraction larger than that of each of the potential barrier layers, and the aluminum mole fraction of the first capping layer is larger than that of at least a portion of the electron barrier layer. A method for preparing the semiconductor light emitting device is also provided.

Abstract: A nitride-based light-emitting diode (LED) device includes an n-type nitride semiconductor layer, an active layer that is disposed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer disposed on the active layer, and a defect control unit disposed between the n-type nitride semiconductor layer and the active layer. The defect control unit includes first, second and third defect control layers that are sequentially disposed on the n-type nitride semiconductor layer in such order, and that have different doping concentrations. The third defect control layer includes one of Al-containing ternary nitride, Al-containing quaternary nitride, and a combination thereof.

Abstract: The present invention relates to compositions and methods for selectively etching silicon nitride in the presence of silicon oxide, polysilicon and/or metal silicides at a high etch rate and with high selectivity. Additives are described that can be used at various dissolved silica loading windows to provide and maintain the high selective etch rate and selectivity.

Abstract: The invention discloses a method for identifying the bacterial species and key functional genes thereof involved in antimony reduction in the soil. After consuming the original substrate by starvation culture, the sole metabolic substrate is added and the sole electron acceptor Sb(V) is provided, so that there is only one dominant electron exchange process in the system. The microorganisms metabolize and oxidize the organic substrate while coupling with the reduction of antimony, so that Sb(V) gets electrons and is reduced to Sb(III). The present invention observes the Sb(V) reduction in an anaerobic culture system of paddy soil under Sb(V) stress, and uses DNA-SIP technology to identify the phylogenic information of microorganisms that can drive the Sb(V) reduction in the culture system.

Abstract: A method for manufacturing a Ganoderma Lucidum fermented beverage product (GLfb) is provided. It has found that ganoderma lucidum contains high quantity of natural Pyrroloquinoline Quinone (PQQ). Free radicals generated by ischemic or hypoxic conditions have been found to be a significant cause of myocardial damage leading to myocardial death. PQQ has been reported to act as a free radical scavenger. In particular, PQQ has been reported to be effective in neutralizing superoxide and hydroxyl radicals.

Abstract: Disclosed is a multi-quantum well structure including a stress relief layer, an electron-collecting layer disposed on the stress relief layer, and an active layer including a first active layer unit that is disposed on the electron-collecting layer. The first active layer unit includes potential barrier sub-layers and potential well sub-lavers being alternately stacked, in which at least one of the potential barrier sub-layers has a GaN/Alx1Iny1Ga(1-x1-y1)N stack, where 0<x1?1 and 0?y1<1. An LED device including the multi-quantum well structure is also disclosed.

Abstract: Disclosed is a multi-quantum well structure including a stress relief layer, an electron-collecting layer disposed on the stress relief layer, and an active layer including a first active layer unit that is disposed on the electron-collecting layer. The first active layer unit includes potential barrier sub-layers and potential well sub-layers being alternately stacked, in which at least one of the potential barrier sub-layers has a GaN/Alx1Iny1Ga(1-x1-y1)N/GaN stack, where 0<x1?1 and 0?y1<1, and for the remainder of the potential barrier sub-layers, each of the potential barrier sub-layers is a GaN layer. An LED device including the multi-quantum well structure is also disclosed.

Abstract: A light-emitting diode includes a first type semiconductor layer, a stress relief layer disposed on the first type semiconductor layer and including at least one first repeating unit containing a first well layer and a first barrier layer that are alternately stacked, an active layer disposed on the stress relief layer and including at least one second repeating unit containing a second well layer and a second barrier layer that are alternately stacked, a second type semiconductor layer disposed on the active layer, a first electrode electrically connected to the first type semiconductor layer, and a second electrode electrically connected to the second type semiconductor layer. The first well layer is made of an In-containing material. The second well layer is made of an In-containing material. The second barrier layer is formed with multiple sub-layers, each of which is made of an Al-containing material.

Abstract: A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked potential barrier layers and potential well layers. The first capping layer is a semiconductor layer, and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has an aluminum mole fraction larger than that of each of the potential barrier layers, and the aluminum mole fraction of the first capping layer is larger than that of at least a portion of the electron barrier layer. A method for preparing the semiconductor light emitting device is also provided.

Abstract: A port listening request dynamically generated by an application process hosted in a container can be identified. Whether the application process hosted in the container is trusted can be determined. Responsive to determining that the application process hosted in the container is trusted, a first port to be used as an external port for the application process can be dynamically selected, and a port assignment can be communicated to a container engine, the port assignment indicating the first port is assigned to the application process. The first port can be mapped to a second port assigned as an internal port for the application process. The first port can be opened for the application process.

Abstract: A port listening request dynamically generated by an application process hosted in a container can be identified. Whether the application process hosted in the container is trusted can be determined. Responsive to determining that the application process hosted in the container is trusted, a first port to be used as an external port for the application process can be dynamically selected, and a port assignment can be communicated to a container engine, the port assignment indicating the first port is assigned to the application process. The first port can be mapped to a second port assigned as an internal port for the application process. The first port can be opened for the application process.