Abstract: The present disclosure provides a calibration method and readable computer storage medium. The calibration method includes: configuring a reference signal source to output a reference signal; delaying the reference signal through a delay chain to output a delay signal; synchronous sampling the reference signal and the delay signal; adding 1 count and obtaining a final count value when the sampling result is in the preset state; determining whether a ratio between the count value and the first quantity is within a preset range; obtaining the average delay time according to the time width of the reference signal wave and the number of the delay units opened in the delay chain when the ratio is within the preset range; and outputting a control signal to the clock recovery circuit according to the average delay time to calibrate the delay time of the clock recovery circuit.

Abstract: An integrated circuit chip includes a semiconductor substrate having thereon a plurality of inter-metal dielectric (IMD) layers and a plurality of first conductive layers embedded in respective said plurality of IMD layers, wherein said first conductive layers comprise copper; a first insulating layer overlying said plurality of IMD layers and said plurality of first conductive layers; at least a first wiring line in a second conductive layer overlying said first insulating layer, for distributing power signal or ground signal, wherein said second conductive layer comprise aluminum; and at least a second wiring line in a third conductive layer overlying said second conductive layer, for distributing power signal or ground signal.

Abstract: An integrated circuit chip includes a semiconductor substrate having thereon a plurality of inter-metal dielectric (IMD) layers and a plurality of first conductive layers embedded in respective said plurality of IMD layers, wherein said first conductive layers comprise copper; a first insulating layer overlying said plurality of IMD layers and said plurality of first conductive layers; at least a first wiring line in a second conductive layer overlying said first insulating layer, for distributing power signal or ground signal, wherein said second conductive layer comprise aluminum; and at least a second wiring line in a third conductive layer overlying said second conductive layer, for distributing power signal or ground signal.

Abstract: An integrated circuit chip includes a semiconductor substrate having thereon a plurality of inter-metal dielectric (IMD) layers and a plurality of first conductive layers embedded in respective said plurality of IMD layers, wherein said first conductive layers comprise copper; a first insulating layer overlying said plurality of IMD layers and said plurality of first conductive layers; at least a first wiring line in a second conductive layer overlying said first insulating layer, for distributing power signal or ground signal, wherein said second conductive layer comprise aluminum; and at least a second wiring line in a third conductive layer overlying said second conductive layer, for distributing power signal or ground signal.

Abstract: An integrated circuit chip includes a semiconductor substrate having thereon a plurality of inter-metal dielectric (IMD) layers and a plurality of first conductive layers embedded in respective said plurality of IMD layers, wherein said first conductive layers comprise copper; a first insulating layer overlying said plurality of IMD layers and said plurality of first conductive layers; at least a first wiring line in a second conductive layer overlying said first insulating layer, for distributing power signal or ground signal, wherein said second conductive layer comprise aluminum; and at least a second wiring line in a third conductive layer overlying said second conductive layer, for distributing power signal or ground signal.

Abstract: An integrated circuit chip includes a semiconductor substrate having thereon a plurality of IMD layers and a plurality of first conductive layers; a first passivation layer overlying the plurality of IMD layers and the first conductive layers; at least a first power/ground mesh wiring line in a first aluminum layer overlying the first Insulating layer; and at least a second power/ground mesh wiring line in a second aluminum layer overlying the first aluminum layer.

Abstract: A transforming circuit includes: a first winding having a first port and a second port operably coupled for a differential signal; and a plurality of second windings, each having a third port and a fourth port operably coupled for a single-ended signal when magnetically coupled to the first winding. When one of the second windings is magnetically coupled to the first winding, each remaining second winding(s) is not magnetically coupled to the first winding.

Abstract: A signal transforming circuit includes: a first substantially 8-shaped geometry primary winding arranged to couple a first input signal; and a substantially 8-shaped geometry secondary winding having a first port and a second port, the substantially 8-shaped geometry secondary winding disposed adjacent to the first substantially 8-shaped geometry primary winding to magnetically couple to the first substantially 8-shaped geometry primary winding for generating an output signal at the first port and the second port.

Abstract: A signal transforming circuit includes: a first substantially 8-shaped geometry primary winding arranged to couple a first input signal; and a substantially 8-shaped geometry secondary winding having a first port and a second port, the substantially 8-shaped geometry secondary winding disposed adjacent to the first substantially 8-shaped geometry primary winding to magnetically couple to the first substantially 8-shaped geometry primary winding for generating an output signal at the first port and the second port.

Abstract: An integrated circuit chip includes a semiconductor substrate having thereon a plurality of IMD layers and a plurality of first conductive layers; a first passivation layer overlying the plurality of IMD layers and the first conductive layers; at least a first power/ground mesh wiring line in a first aluminum layer overlying the first Insulating layer; and at least a second power/ground mesh wiring line in a second aluminum layer overlying the first aluminum layer.

Abstract: A transforming circuit includes: a first winding having a first port and a second port operably coupled for a differential signal; and a plurality of second windings, each having a third port and a fourth port operably coupled for a single-ended signal when magnetically coupled to the first winding. When one of the second windings is magnetically coupled to the first winding, each remaining second winding(s) is not magnetically coupled to the first winding.

Abstract: A phase locked loop (PLL) with a loop bandwidth calibration circuit is provided. The mixed-mode PLL comprises an analog phase correction path, a digital frequency correction path, a calibration current source, and a loop bandwidth calibration circuit. The analog phase correction path comprises a linear phase correction unit (LPCU). The digital frequency correction path comprises a digital integral path circuit. The calibration current source is coupled to the LPCU. The loop bandwidth calibration circuit is coupled to a frequency divider and coupled between the input and output of the PLL. The loop bandwidth calibration circuit operates after the calibration current source injects a calibration current into the LPCU.

Abstract: A signal generating apparatus includes: a test data generator for generating a test data; a fractional-N phase-locked loop device coupled to the test data generator for generating a synthesized signal according to the test data when the test data is received; and a calibrating device coupled to the fractional-N phase-locked loop device for measuring power of the synthesized signal to generate a calibration signal utilized for adjusting the fractional-N phase-locked loop device.

Abstract: A phase locked loop (PLL) with a loop bandwidth calibration circuit is provided. The mixed-mode PLL comprises an analog phase correction path, a digital frequency correction path, a calibration current source, and a loop bandwidth calibration circuit. The analog phase correction path comprises a linear phase correction unit (LPCU). The digital frequency correction path comprises a digital integral path circuit. The calibration current source is coupled to the LPCU. The loop bandwidth calibration circuit is coupled to a frequency divider and coupled between the input and output of the PLL. The loop bandwidth calibration circuit operates after the calibration current source injects a calibration current into the LPCU.

Abstract: A temperature compensated oscillation circuit capable of providing a stable frequency output over temperature is provided, in which an oscillator with a crystal resonator is arranged to generate an oscillation signal with an output frequency, and a temperature sensor provides a temperature compensation voltage of which a function is linear with respect to an ambient temperature of the oscillator. A first accumulation mode MOS varactor is coupled to the oscillator, and the first accumulation mode MOS varactor adjusts a capacitance thereof in response to the temperature compensation voltage, such that the coupled oscillator has a frequency compensation over temperature for the oscillation signal, wherein the frequency compensation substantially varies as an inverse function of a deviation of the crystal resonator over temperature when the ambient temperature is within a predetermined temperature range.

Abstract: A phase locked loop frequency synthesizer including a phase locked loop, a frequency regenerator and a modulation processor, resistant to distortion induced by the frequency regenerator and conforming to transmission specifications. The phase locked loop comprises a detector generating a phase detection signal based on phase difference between a reference signal and a feedback signal, a loop filter, a voltage control oscillator generating a first output modulation signal and a frequency dividing unit varying a division factor based on a processed input modulation signal and dividing the frequency of the first output modulation signal by a division factor to generate the feedback signal. The frequency regenerator generates a second output modulation signal with a frequency range not overlapping an output frequency range of the voltage control oscillator.

Abstract: A phase locked loop (PLL) directly uses a charge pump and loop filter therein for fast and low-costly calibration. The PLL comprises a charge pump, a loop filter, a voltage comparator, a counting device, and a calibration device. The loop filter comprises a voltage storage device coupled to the charge pump for charging by the charge pump, wherein the voltage storage device comprises a variable impedance. The voltage comparator is coupled to a voltage reference and to the voltage storage device for comparing a voltage of the storage device and a voltage of the voltage reference. The counting device is coupled to the voltage comparator to measure the charge time required for the voltage of the voltage storage device to substantially equal to the voltage of the voltage reference. The calibration device adjusts the variable impedance to adjust the time measured by the counting device to a desired time.

Abstract: A dynamic carrying method to prevent saturation of a sigma-delta modulator of a phase locked loop frequency synthesizer. The phase locked loop frequency synthesizer using the dynamic carrying method comprises a forward portion receiving a reference frequency signal and a first frequency signal to generate an output carrier signal; a multi-modulus divider dividing the output carrier signal frequency to generate the first frequency signal; a dynamic carrying device receiving and separating transmitting data into a carrying part and a residue part when the transmitting data amplitude exceeds a threshold; a sigma-delta modulator receiving the residue part to generate a first modulus control signal; an auxiliary modulator receiving the carrying part to generate a second modulus control signal; and a first adder receiving the first modulus control signal, the second modulus control signal, and a third modulus control signal and outputting a modulus modulation signal to modulate the multi-modulus divider.

Abstract: A signal generating apparatus is disclosed. The signal generating apparatus includes a test data generator for generating a test data; a fractional-N phase-locked loop device coupled to the test data generator for generating a synthesized signal according to the test data when the test data is received; and a calibrating device coupled to the fractional-N phase-locked loop device for measuring power of the synthesized signal to generate a calibration signal utilized for adjusting the fractional-N phase-locked loop device.

Abstract: A signal generating apparatus is disclosed. The signal generating apparatus includes a phase-locked loop device for generating a synthesized signal, wherein the phase-locked loop device includes a phase detector, a charge pump device, a filtering device, a controllable oscillator, and a switch device coupled to the controllable oscillator for selectively coupling the controllable oscillator to the filtering device or a tuning reference signal; a calibration controller generates a tuning reference signal and controls the switch device; and a first calibrator tunes the controllable oscillator into a predetermined sub-band according to a reference oscillating signal and a synthesized signal when the switch device couples the controllable oscillator to the tuning reference signal of the calibration controller.