Abstract: A high electron mobility transistor (HEMT) device and a method of forming the same are provided. The method includes forming a first III-V compound layer over a substrate. A second III-V compound layer is formed over the first III-V compound layer. The second III-V compound layer has a greater band gap than the first III-V compound layer. A third III-V compound layer is formed over the second III-V compound layer. The third III-V compound layer and the first III-V compound layer comprise a same III-V compound. A passivation layer is formed along a topmost surface and sidewalls of the third III-V compound layer. A fourth III-V compound layer is formed over the second III-V compound layer. The fourth III-V compound layer has a greater band gap than the first III-V compound layer.

Abstract: Disclosed is a semiconductor device and a method for fabricating such semiconductor device, specifically a High Electron Mobility Transistor (HEMT) with a back barrier layer for blocking electron leakage and improve threshold voltage. In one embodiment, a semiconductor device, includes: a Gallium Nitride (GaN) layer; a front barrier layer over the GaN layer; a source electrode, a drain electrode and a gate electrode formed over the front barrier layer; a 2-Dimensional Electron Gas (2-DEG) in the GaN layer at a first interface between the GaN layer and the front barrier layer; and a back barrier layer in the GaN layer, wherein the back barrier layer comprises Aluminum Nitride (AIN).

Abstract: Various embodiments of the present disclosure are directed toward an integrated chip including an undoped layer overlying a substrate. A first barrier layer overlies the undoped layer. A doped layer overlies the first barrier layer. Further, a second barrier layer overlies the first barrier layer, where the second barrier layer is laterally offset from a perimeter of the doped layer by a non-zero distance. The first and second barrier layers comprise a same III-V semiconductor material. A first atomic percentage of a first element within the first barrier layer is less than a second atomic percentage of the first element within the second barrier layer.

Abstract: Disclosed is a detecting method of a wearable device, which comprises: providing a current to drive a light source to emit auxiliary light corresponding to ambient light received by the wearable device; and informing a wearing status indicative whether the wearable device is correctly worn by a user or not according to the current. By this way, the wearing status of the user can be easily detected.

Abstract: A method for protecting muscles, comprising administering to a subject in need an effective amount of a FU-LING (Poria cocos) extract, tumulosic acid and/or a pharmaceutical acceptable salt of tumulosic acid. In particular, the method of the present invention is for protecting muscle cells against injury, promoting regeneration and repair of muscle, regulating, treating and/or delaying muscle atrophy (especially caused by aging, diseases, and cachexia), or helping normal muscle contraction, maintaining normal muscle physiology, maintaining normal neuromuscular function, maintaining normal energy metabolism, or enhancing energy level.

Abstract: Disclosed is a semiconductor device and a method for fabricating such semiconductor device, specifically a High Electron Mobility Transistor (HEMT) with a back barrier layer for blocking electron leakage and improve threshold voltage. In one embodiment, a semiconductor device, includes: a Gallium Nitride (GaN) layer; a front barrier layer over the GaN layer; a source electrode, a drain electrode and a gate electrode formed over the front barrier layer; a 2-Dimensional Electron Gas (2-DEG) in the GaN layer at a first interface between the GaN layer and the front barrier layer; and a back barrier layer in the GaN layer, wherein the back barrier layer comprises Aluminum Nitride (AlN).

Abstract: A method of monitoring eye strain includes detecting the blink status, the vergence status and the pupil status of a user, and then determining whether the user encounters eye strain according to at least one of the blink status, the vergence status and the pupil status of the user. The method further includes facilitating the user to blink or informing the user of eye strain.

Abstract: Strain relief trenches may be formed in a substrate prior to growth of an epitaxial layer on the substrate. The trenches may reduce the stresses and strains on the epitaxial layer that occur during the epitaxial growth process due to differences in material properties (e.g., lattice mismatches, differences in thermal expansion coefficients, and/or the like) between the epitaxial layer material and the substrate material. The stress and strain relief provided by the trenches may reduce or eliminate cracks and/or other types of defects in the epitaxial layer and the substrate, may reduce and/or eliminate bowing and warping of the substrate, may reduce breakage of the substrate, and/or the like. This may increase the center-to-edge quality of the epitaxial layer, may permit epitaxial layers to be grown on larger substrates, and/or the like.

Abstract: A probiotic composition for improving an effect of a chemotherapeutic drug of Gemcitabine on inhibiting pancreatic cancer is disclosed in the present disclosure. The probiotic composition comprises an effective amount of Lactobacillus paracasei GMNL-133, an effective amount of Lactobacillus reuteri GMNL-89, and a pharmaceutically acceptable carrier, wherein the Lactobacillus paracasei GMNL-133 was deposited in the China Center for Type Culture Collection on Sep. 26, 2011 under an accession number CCTCC NO. M 2011331, and the Lactobacillus reuteri GMNL-89 was deposited in the China Center for Type Culture Collection on Nov. 19, 2007 under an accession number CCTCC NO. M 207154. A method for improving the effect of the chemotherapeutic drug of Gemcitabine on inhibiting pancreatic cancer is further disclosed in the present disclosure.

Abstract: An optical engine module including at least two laser sources, collimators, a light combining lens group, an aperture, a beam shaping lens group, a MEMS scanning module, and a beam expansion lens group is provided. The at least two laser sources respectively generate at least two laser beams with different wavelengths. The collimators respectively collimate the at least two laser beams to generate at least two collimated beams. The light combining lens group combines the at least two collimated beams into a combined beam. The aperture filters stray beams of the combined beam. The beam shaping lens group shapes the combined beam to generate a shaped beam with a perfect circle. The MEMS scanning module reflects the shaped beam and scans in horizontal and vertical directions to form a scanning beam. The beam expansion lens group expands the scanning beam into an expanded beam having a predetermined area.

Abstract: A warp transferring machine includes a color transferring unit, a colored paper unit and a yarn arranging unit. The color transferring unit includes a heating roller, a driving shaft, a separable shaft, a supporting shaft that are rotatable about their respective axes and a pressing belt that is looped therearound to circulate continuously. The colored paper unit and the yarn arranging unit respectively guide a colored paper and a yarn toward the heating roller such that the pressing belt presses thereagainst so as to transfer colors of the colored paper onto the yarn.

Abstract: Various embodiments of the present disclosure are directed toward an integrated chip including an undoped layer overlying a substrate. A first barrier layer overlies the undoped layer. A doped layer overlies the first barrier layer. Further, a second barrier layer overlies the first barrier layer, where the second barrier layer is laterally offset from a perimeter of the doped layer by a non-zero distance. The first and second barrier layers comprise a same III-V semiconductor material. A first atomic percentage of a first element within the first barrier layer is less than a second atomic percentage of the first element within the second barrier layer.

Abstract: Disclosed is a detecting method of a wearable device, which comprises: providing a current to drive a light source to emit auxiliary light corresponding to ambient light received by the wearable device; and informing a wearing status indicative whether the wearable device is correctly worn by a user or not according to the current. By this way, the wearing status of the user can be easily detected.

Abstract: A high electron mobility transistor (HEMT) device and a method of forming the same are provided. The method includes forming a first III-V compound layer over a substrate. A second III-V compound layer is formed over the first III-V compound layer. The second III-V compound layer has a greater band gap than the first III-V compound layer. A third III-V compound layer is formed over the second III-V compound layer. The third III-V compound layer and the first III-V compound layer comprise a same III-V compound. A passivation layer is formed along a topmost surface and sidewalls of the third III-V compound layer. A fourth III-V compound layer is formed over the second III-V compound layer. The fourth III-V compound layer has a greater band gap than the first III-V compound layer.

Abstract: A wearable device includes: a sensing circuit and a processing circuit, wherein the sensing circuit is arranged to generate a wearing information output in each of a plurality of detecting periods, and the processing circuit is arranged to inform a wearing status indicative of a status of wearing the wearable device according to wearing information outputs generated in the plurality of detecting periods.

Abstract: A high electron mobility transistor (HEMT) device and a method of forming the same are provided. The method includes forming a first III-V compound layer over a substrate. A second III-V compound layer is formed over the first III-V compound layer. The second III-V compound layer has a greater band gap than the first III-V compound layer. A third III-V compound layer is formed over the second III-V compound layer. The third III-V compound layer and the first III-V compound layer comprise a same III-V compound. A passivation layer is formed along a topmost surface and sidewalls of the third III-V compound layer. A fourth III-V compound layer is formed over the second III-V compound layer. The fourth III-V compound layer has a greater band gap than the first III-V compound layer.

Abstract: A method for regulating, preventing, and/or treating pulmonary injury, and/or for regulating, preventing, and/or treating pulmonary injury-related diseases is provided. The method comprises administering to a subject in need an effective amount of FU-LING extract, tumulosic acid, dehydrotumulosic acid, dehydrotrametenolic acid, and/or poricoic acid A.

Abstract: A datum rebuilding method is applied to a bio-sensor module equipped in a wearable electronic device with the datum rebuilding function. The datum rebuilding method includes continuously receiving a plurality of physical signals, identifying if one specific physical signal meets a predefined condition, and outputting a warning signal to show a reminder when the specific physical signal is identified.