Patents by Inventor Lingqian Qian

Lingqian Qian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a fluorinated silicon oxide layer using plasma chemical vapor deposition
    Patent number: 5571576
    Abstract: A method of forming a fluorinated silicon oxide dielectric layer by plasma chemical vapor deposition. The method includes the steps of creating a plasma in a plasma chamber and introducing a silicon-containing gas, a fluorine-containing gas, oxygen and an inert gas such that the gases are excited by the plasma and react proximate a substrate to form a fluorinated silicon oxide layer on the surface of the substrate. The fluorinated layer formed has a dielectric constant which is less than that of a silicon oxide layer.
    Type: Grant
    Filed: February 10, 1995
    Date of Patent: November 5, 1996
    Assignee: Watkins-Johnson
    Inventors: Lingqian Qian, Melvin C. Schmidt, Glenn L. Nobinger