Abstract: The invention relates to a process for fabricating electronic components incorporating an inductive microcomponent placed on top of a substrate. Such a component comprises: a layer (10) of material having a low relative permittivity, lying on the top face of the substrate (1); a number of metal turns (30-31) defined on top of the layer (10) of material having a low relative permittivity; and a copper diffusion barrier layer (15) interposed between the metal turns (30-31) and the layer of material having a low relative permittivity.

Abstract: A multilayer structure, used especially as a material of high relative permittivity, includes a plurality of separate layers, each having a thickness of less than 500 Å, and based on hafnium dioxide (HfD2), zirconium dioxide (ZrO2) and alumina (Al2O3). In practice, the hafnium dioxide, zirconium dioxide and alumina layers form alloys of formula HfxZrAlyOz. Advantageously, the stoichiometry of the HfxZrAlyOz alloys varies from one layer to another.

Abstract: Multilayer structure, used especially as a material of high relative permittivity, characterized in that it comprises a plurality of separate layers, each having a thickness of less than 500 Å. Some of those layers are based on aluminium, hafnium and oxygen and especially based on hafnium dioxide (HfO2) and on alumina (Al2O3). In practice, the hafnium dioxide and alumina layers form alloys of formula HfxAlyOz. Advantageously, the stoichiometry of the HfxAlyOz varies from one layer to another. Some of the layers containing HfxAlyOz alloys, or some of the layers between those containing HfxAlyOz alloys, also include a lanthanide element.

Abstract: Electronic microcomponent based on a substrate and incorporating a capacitive structure produced on top of a metallization level present in the substrate, said capacitive structure comprising two electrodes, wherein:

Abstract: An electronic component produced from a substrate and incorporating a capacitive structure formed on top of the final visible metallization level produced in the substrate, said capacitive structure having two electrodes, wherein one of the electrodes comprises an array of superposed fins that are offset from one another with respect to a central trunk, the other electrode comprising two arrays of fins, the fins of each of the latter arrays being interleaved with the fins of the first electrode and being joined together by a common wall, the two common walls themselves being joined together above the first electrode.

Abstract: Multilayer structure, used especially as a material of high relative permittivity, characterized in that it comprises a plurality of separate layers, each having a thickness of less than 500 Å, and some of which are based on aluminium, hafnium and oxygen and especially based on hafnium dioxide (HfO2) and on alumina (Al2O3). In practice, the hafnium dioxide and alumina layers form alloys of formula HfxAlyOz. Advantageously, the stoichiometry of the HfxAlyOz varies from one layer to another.

Abstract: Multilayer structure, used especially as a material of high relative permittivity, characterized in that it comprises a plurality of superposed elementary layers, each with a thickness of less than about 500 Å, among which there are two layers based on an alloy of titanium dioxide (TiO2) and tantalum pentoxide (Ta2O5), these layers being separated by an interlayer of an alloy based on at least hafnium dioxide (HfO2) an alumina (Al2O3).

Abstract: Electronic component incorporating an integrated circuit made in a substrate (1) and a planar capacitor, characterized in that the capacitor is made on top of a metallization plane of the component, this metallization plane forming a first electrode (2) of the capacitor, and in that the capacitor comprises:

Abstract: Multilayer structure, used especially as a material of high relative permittivity, characterized in that it comprises a plurality of separate layers, each having a thickness of less than 500 Å, and based on hafnium dioxide (HfO2), zirconium dioxide (ZrO2) and alumina (Al2O3). In practice, the hafnium dioxide, zirconium dioxide and alumina layers form alloys of formula HfxZrAlyOz. Advantageously, the stoichiometry of the HfxZrAlyOz alloys varies from one layer to another.

Abstract: The invention relates to a process for fabricating electronic components, incorporating an inductive microcomponent placed on top of a substrate.

Abstract: The invention relates to a process for fabricating electronic components incorporating an inductive microcomponent placed on top of a substrate.

Abstract: The invention relates to a process for fabricating electronic components incorporating an inductive microcomponent placed on top of a substrate.