Abstract: A substrate subassembly for a high power module, and methods involving the same. The substrate subassembly contains only one switching transistor and has at least one integral short terminal lead tab. The substrate subassemblies can be pretested at significant operating current, to obtain enhanced characterization and matching of mounted switching transistors. Trimmable gate lead resistances can be incorporated in the substrate subassemblies. Enhanced compositional, geometrical and electrical module symmetry is available. New module structures and method are afforded.

Abstract: A low inductance triaxial semiconductor switching module. The module permits high power semiconductor switching devices to operated at high frequency but with low inductance. The module incorporates compositional, geometrical and electrical symmetry in connection with a triaxial terminal subassembly having coplanar contact areas. The terminal subassembly is readily fabricated and assembled into the module. The module also includes short internal leads, a special circumferential array of substrates subassemblies, and a circular circuit board having gate and Kelvin circuit patterns.

Abstract: A substrate subassembly for a high power module, and methods involving the same. The substrate subassembly contains only one switching transistor and has at least one integral short terminal lead tab. The substrate subassemblies can be pretested at significant operating current, to obtain enhanced characterization and matching of mounted switching transistors. Trimmable gate lead resistances can be incorporated in the substrate subassemblies. Enhanced compositional, geometrical and electrical module symmetry is available. New module structures and method are afforded.