Abstract: In order to remove the problems in conventional nitride compound semiconductor laser structures, namely, high operation voltage caused by a high resistance in a p-type layer and a high contact resistance of an electrode, damage to the crystal caused by dry etching, insufficient current injection, and the need for a high current density, a nitride compound semiconductor light emitting device has current blocking layers made of n-type B(1−x−y−z)InxAlyGazN (0≦x≦1, 0≦y≦1, 0≦z≦1) single crystal containing an oxide of a predetermined metal, carbon and impurities exhibiting p-type and n-type conductivity, or i-type B(1−x−y−z)InxAlyGazN (0≦x≦1, 0≦y≦1, 0≦z≦1) single crystal in which carriers are inactivated by hydrogen or oxygen to realize an internal current blocking structure without the need for dry etching.

Abstract: The present invention provides a nitride system semiconductor device which decreases in cost and improves productivity without heat treatment after the growth and which increases lifetime and reliability by enhancing the quality of a p-type conductive layer, and a method for manufacturing the nitride system semiconductor device. The nitride system semiconductor device has a multilayer structure of an n-type InxGayAlzB1-x-y-zNmPnAs1-m-n (0≦x, 0≦y 0≦z, 0≦x+y+z≦1, 0<m, 0≦n, 0<m+n≦1) layer, a p-type InxGayAlzB1-x-y-zNmPnAs1-m-n (0≦x, 0≦y, 0≦z, 0≦x+y+z≦1, 0<m, 0<n, 0<m+n≦1) layer, and an electrode 22 formed on a substrate. The oxygen concentration of the surface of the p-type InxGayAlzB1-x-y-zNmPnAs1-m-n layer is 5×1018 cm−3 or lower.

Abstract: A gallium nitride (GaN)-based semiconductor device comprises a substrate, a single-crystal layer consisting mainly of GaN with a magnesium (Mg) concentration of N.sub.bg1 cm.sup.-3, the single-crystal layer being provided near the substrate and having a thickness of d.sub.1 .mu.m, and a semiconductor layer consisting mainly of Ga.sub.1-x Al.sub.x N having an Al composition x of at least 0.02 and not higher than 1 and having a thickness of d.sub.2 .mu.m. The single-crystal layer is situated between the substrate and the semiconductor layer, and Mg is added to the semiconductor layer at a concentration of N.sub.Mg cm.sup.-3. The Al composition x, the concentration N.sub.Mg, the concentration N.sub.bg1, the thickness d.sub.1 and the thickness d.sub.2 have the following relationshipd.sub.1 /(1600.times.x)<d.sub.2 <3.6.times.10.sup.-3 .times.logN/(x+0.02)+0.02wherein when N.sub.Mg >N.sub.bg1, N cm.sup.-3 =N.sub.Mg -N.sub.bg1, and when N.sub.Mg .ltoreq.N.sub.

Abstract: Nitride-based semiconductor element comprises a first layer, a mask formed on the first layer and has a plurality of opening portions, a nitride-based compound semiconductor layer formed on the mask, the nitride-based compound semiconductor layer including a first region having threading dislocations produced in such a manner that, in approximately a middle portion between two adjacent ones of the plurality of opening portions in the mask, a plurality of dislocations extend in a vertical direction to a surface of the mask, and a second region which comprises portions other than the middle portions and free from the dislocations, and a desired element structure formed on the semiconductor layer.

Abstract: The present invention provides a nitride system semiconductor device which decreases cost and improves productivity without heat treatment after the growth and which increases in lifetime and reliability by enhancing the quality of a p-type conductive layer, and a method for manufacturing the nitride system semiconductor device. The nitride system semiconductor device has a multilayer structure of an n-type In.sub.x Ga.sub.y Al.sub.z B.sub.1-x-y-z N.sub.m P.sub.n As.sub.1-m-n (0.ltoreq.x, 0.ltoreq.y, 0.ltoreq.z, 0.ltoreq.x+y+z.ltoreq.1, 0<m, 0.ltoreq.n, 0<m+n.ltoreq.1) layer, a p-type In.sub.x Ga.sub.y Al.sub.z B.sub.1-x-y-z N.sub.m P.sub.n As.sub.1-m-n (0.ltoreq.x, 0.ltoreq.y, 0.ltoreq.z, 0.ltoreq.x+y+z.ltoreq.1, 0<m, 0.ltoreq.n, 0<m+n.ltoreq.1) layer, and an electrode 22 formed on a substrate. The oxygen concentration of the surface of the p-type In.sub.x Ga.sub.y Al.sub.z B.sub.1-x-y-z N.sub.m P.sub.n As.sub.1-m-n layer is 5.times.10.sup.18 cm.sup.-3 or lower.

Abstract: A gallium nitride (GaN)-based semiconductor device comprises a substrate, a single-crystal layer consisting mainly of GaN with a magnesium (Mg) concentration of N.sub.bg1 cm.sup.-3, the single-crystal layer being provided near the substrate and having a thickness of d.sub.1 .mu.m, and a semiconductor layer consisting mainly of Ga.sub.1-x Al.sub.x N having an Al composition x of at least 0.02 and not higher than 1 and having a thickness of d.sub.2 .mu.m. The single-crystal layer is situated between the substrate and the semiconductor layer, and Mg is added to the semiconductor layer at a concentration of N.sub.Mg cm.sup.-3. The Al composition x, the concentration N.sub.Mg, the concentration N.sub.bg1, the thickness d.sub.1 and the thickness d.sub.2 have the following relationshipd.sub.1 /(1600.times.x)<d.sub.2 <3.6.times.10.sup.-3 .times.logN/(x+0.02)+0.02wherein when N.sub.Mg >N.sub.bg1, N cm.sup.-3 =N.sub.Mg -N.sub.bg1, and when N.sub.Mg .ltoreq.N.sub.