Abstract: A solar cell is provided including a substrate having a front and back side, a metallization pattern deposited on the front side, the metallization pattern including a plurality of front side bus bars each including fingers extending therefrom, and a plurality of back side bus bars deposited on the back side. On the front side, one front side bus bar is formed along an edge of the front side of the substrate, and a remainder of the front side bus bars are unequally spaced across the substrate. On the back side of the substrate, only one back side bus bar is formed along an edge of the back side of the substrate, and a remainder of the back side bus bars are unequally spaced across the substrate.

Abstract: A solar cell is provided including a substrate having a front and back side, a metallization pattern deposited on the front side, the metallization pattern including a plurality of front side bus bars each including fingers extending therefrom, and a plurality of back side bus bars deposited on the back side. On the front side, one front side bus bar is formed along an edge of the front side of the substrate, and a remainder of the front side bus bars are unequally spaced across the substrate. On the back side of the substrate, only one back side bus bar is formed along an edge of the back side of the substrate, and a remainder of the back side bus bars are unequally spaced across the substrate.

Abstract: A solar cell is provided including a substrate having a front and back side, a metallization pattern deposited on the front side, the metallization pattern including a plurality of front side bus bars each including fingers extending therefrom, and a plurality of back side bus bars deposited on the back side. On the front side, one front side bus bar is formed along an edge of the front side of the substrate, and a remainder of the front side bus bars are unequally spaced across the substrate. On the back side of the substrate, only one back side bus bar is formed along an edge of the back side of the substrate, and a remainder of the back side bus bars are unequally spaced across the substrate.

Abstract: A solar cell is provided including a substrate having a front and back side, a metallization pattern deposited on the front side, the metallization pattern including a plurality of front side bus bars each including fingers extending therefrom, and a plurality of back side bus bars deposited on the back side. On the front side, one front side bus bar is formed along an edge of the front side of the substrate, and a remainder of the front side bus bars are unequally spaced across the substrate. On the back side of the substrate, only one back side bus bar is formed along an edge of the back side of the substrate, and a remainder of the back side bus bars are unequally spaced across the substrate.

Abstract: A solar cell is provided including a substrate having a front and back side, a metallization pattern deposited on the front side, the metallization pattern including a plurality of front side bus bars each including fingers extending therefrom, and a plurality of back side bus bars deposited on the back side. On the front side, one front side bus bar is formed along an edge of the front side of the substrate, and a remainder of the front side bus bars are unequally spaced across the substrate. On the back side of the substrate, only one back side bus bar is formed along an edge of the back side of the substrate, and a remainder of the back side bus bars are unequally spaced across the substrate.

Abstract: The present invention generally provides a batch substrate processing system, or cluster tool, for in-situ processing of a film stack used to form regions of a solar cell device. In one configuration, the film stack formed on each of the substrates in the batch contains one or more silicon-containing layers and one or more metal layers that are deposited and further processed within the various chambers contained in the substrate processing system. In one embodiment, a batch of solar cell substrates is simultaneously transferred in a vacuum or inert environment to prevent contamination from affecting the solar cell formation process.

Abstract: The present invention generally provides a method of forming a high efficiency solar cell device by preparing a surface and/or forming at least a part of a high quality passivation layer on a silicon containing substrate. Embodiments of the present invention may be especially useful for preparing a surface of a p-type doped region formed on a silicon substrate so that a high quality passivation layer can be formed thereon. In one embodiment, the methods include exposing a surface of the solar cell substrate to a plasma to clean and modify the physical, chemical and/or electrical characteristics of the surface.

Abstract: A silicon nitride layer may be formed with a suitable refractive index, mass density, and hydrogen concentration so that the layer may serve as an ARC/passivation layer on a solar cell substrate. The silicon nitride layer may be formed on a solar cell substrate by adding a hydrogen gas diluent to a conventional precursor gas mixture during the deposition process. Alternatively, the silicon nitride layer may be formed on a solar cell substrate by using a precursor gas mixture consisting essentially of silane and nitrogen. To improve deposition chamber throughput, the silicon nitride layer may be a dual stack film that includes a low-hydrogen interface layer and a thicker bulk silicon nitride layer. Placing a plurality of solar cell substrates on a substrate carrier and transferring the substrate carrier into the deposition chamber may further enhance deposition chamber throughput.

Abstract: The present invention generally provides a method of forming a high efficiency solar cell device by preparing a surface and/or forming at least a part of a high quality passivation layer on a silicon containing substrate. Embodiments of the present invention may be especially useful for preparing a surface of a p-type doped region formed on a silicon substrate so that a high quality passivation layer can be formed thereon. In one embodiment, the methods include exposing a surface of the solar cell substrate to a plasma to clean and modify the physical, chemical and/or electrical characteristics of the surface.

Abstract: The present invention generally provides a batch substrate processing system for in-situ processing of a film stack used to form regions of a solar cell device. The batch processing system is configured to process an array of substrates positioned on a substrate carrier. The batch processing system includes a substrate transport interface that provides loading an unloading of the array of substrates in a production line environment. The substrate transport interface may include one or more of a substrate carrier cleaning module, a substrate carrier cooling module, and a substrate carrier buffer module.

Abstract: The present invention generally provides a method of forming a high efficiency solar cell device by preparing a surface and/or forming at least a part of a high quality passivation layer on a silicon containing substrate. Embodiments of the present invention may be especially useful for preparing a surface of a p-type doped region formed on a silicon substrate so that a high quality passivation layer can be formed thereon. In one embodiment, the methods include exposing a surface of the solar cell substrate to a plasma to clean and modify the physical, chemical and/or electrical characteristics of the surface.

Abstract: A silicon nitride layer may be formed with a suitable refractive index, mass density, and hydrogen concentration so that the layer may serve as an ARC/passivation layer on a solar cell substrate. The silicon nitride layer may be formed on a solar cell substrate by adding a hydrogen gas diluent to a conventional precursor gas mixture during the deposition process. Alternatively, the silicon nitride layer may be formed on a solar cell substrate by using a precursor gas mixture consisting essentially of silane and nitrogen. To improve deposition chamber throughput, the silicon nitride layer may be a dual stack film that includes a low-hydrogen interface layer and a thicker bulk silicon nitride layer. Placing a plurality of solar cell substrates on a substrate carrier and transferring the substrate carrier into the deposition chamber may further enhance deposition chamber throughput.

Abstract: The present invention generally provides a method of forming a high efficiency solar cell device by preparing a surface and/or forming at least a part of a high quality passivation layer on a silicon containing substrate. Embodiments of the present invention may be especially useful for preparing a surface of a p-type doped region formed on a silicon substrate so that a high quality passivation layer can be formed thereon. In one embodiment, the methods include exposing a surface of the solar cell substrate to a plasma to clean and modify the physical, chemical and/or electrical characteristics of the surface.

Abstract: A silicon nitride layer may be formed with a suitable refractive index, mass density, and hydrogen concentration so that the layer may serve as an ARC/passivation layer on a solar cell substrate. The silicon nitride layer may be formed on a solar cell substrate by adding a hydrogen gas diluent to a conventional precursor gas mixture during the deposition process. Alternatively, the silicon nitride layer may be formed on a solar cell substrate by using a precursor gas mixture consisting essentially of silane and nitrogen. To improve deposition chamber throughput, the silicon nitride layer may be a dual stack film that includes a low-hydrogen interface layer and a thicker bulk silicon nitride layer. Placing a plurality of solar cell substrates on a substrate carrier and transferring the substrate carrier into the deposition chamber may further enhance deposition chamber throughput.

Abstract: The present invention generally provides a batch substrate processing system, or cluster tool, for in-situ processing of a film stack used to form regions of a solar cell device. In one configuration, the film stack formed on each of the substrates in the batch contains one or more silicon-containing layers and one or more metal layers that are deposited and further processed within the various chambers contained in the substrate processing system.

Abstract: Embodiments of the present invention generally provide methods for depositing a silicon carbide (SiC) passivation layer that may act as a high-quality passivation layer for solar cells. Embodiments of the invention also provide methods for depositing a silicon carbide/silicon oxide passivation layer that acts as a high-quality rear surface passivation layer for solar cells. The methods described herein enable the use of deposition systems configured for processing large-area substrates for solar cell processing. According to embodiments of the invention, a SiC passivation layer may be formed with improved minority carrier lifetime measurements. The SiC passivation layer may be formed at a temperature between about 150° C. and 450° C., which is much lower than temperatures for thermal oxide passivation.

Abstract: A silicon nitride layer may be formed with a suitable refractive index, mass density, and hydrogen concentration so that the layer may serve as an ARC/passivation layer on a solar cell substrate. The silicon nitride layer may be formed on a solar cell substrate by adding a hydrogen gas diluent to a conventional precursor gas mixture during the deposition process. Alternatively, the silicon nitride layer may be formed on a solar cell substrate by using a precursor gas mixture consisting essentially of silane and nitrogen. To improve deposition chamber throughput, the silicon nitride layer may be a dual stack film that includes a low-hydrogen interface layer and a thicker bulk silicon nitride layer. Placing a plurality of solar cell substrates on a substrate carrier and transferring the substrate carrier into the deposition chamber may further enhance deposition chamber throughput.