Abstract: This invention describes a magnetoresistive inertial sensor chip, comprising a substrate, a vibrating diaphragm, a magnetic field sensing magnetoresistor and at least one permanent magnet thin film. The vibrating diaphragm is located on one side surface of the substrate. The magnetic field sensing magnetoresistor and the permanent magnet thin film are set on the surface of the vibrating diaphragm displaced from the base of the substrate. A contact electrode is also arranged on the surface of the vibrating diaphragm away from the base of the substrate. The magnetic field sensing magnetoresistor is connected to the contact electrode through a lead. The substrate comprises a cavity formed through etching and either one or both of the magnetic field sensing magnetoresistors and the permanent magnet thin film are arranged in a vertical projection area of the cavity in the vibrating diaphragm portion.

Abstract: An anisotropic magnetoresistive (AMR) sensor without a set and reset device may include a substrate, an exchange bias layer, an AMR layer and a collection of barber-pole electrodes. The exchange bias layer may be deposited on the substrate and the AMR layer may be deposited on the exchange bias layer. The AMR layer may include multiple groups of AMR strips, and each group may include several AMR strips. The barber-pole electrodes may be arranged on each AMR strip. The AMR sensor achieves coupling by using the exchange bias layer, without requiring a reset/set coil. Because a coil is not used, the power consumption of the chip is reduced greatly, and the manufacturing process is simpler, providing improved yield and lower cost.

Abstract: This invention describes a magnetoresistive inertial sensor chip, comprising a substrate, a vibrating diaphragm, a magnetic field sensing magnetoresistor and at least one permanent magnet thin film. The vibrating diaphragm is located on one side surface of the substrate. The magnetic field sensing magnetoresistor and the permanent magnet thin film are set on the surface of the vibrating diaphragm displaced from the base of the substrate. A contact electrode is also arranged on the surface of the vibrating diaphragm away from the base of the substrate. The magnetic field sensing magnetoresistor is connected to the contact electrode through a lead. The substrate comprises a cavity formed through etching and either one or both of the magnetic field sensing magnetoresistors and the permanent magnet thin film are arranged in a vertical projection area of the cavity in the vibrating diaphragm portion.

Abstract: A sensor chip is used for multi-physical quantity measurement. This sensor chip comprises a substrate and at least two of the following sensors: a temperature sensor, a humidity sensor, or a pressure sensor, which are integrated onto the same substrate, wherein the pressure sensor consists of electrically interconnected resistive elements. The humidity sensor is an interdigitated structure. Thermistor elements are placed around the pressure sensor and the humidity sensor to form a temperature sensor. The temperature sensor has a resistance adjusting circuit. A microcavity is etched on the back of the substrate in a place on the opposite side pressure sensor's location. Also disclosed is a preparation method for a sensor chip used for multi-physical quantity measurement. This multi-physical quantity measurement single chip sensor chip has the advantages of low cost, low power consumption, easy fabrication, and wide applicability.

Abstract: A copper thermal resistance thin-film temperature sensor chip comprises a substrate, a temperature sensor, and two electrode plates, the temperature sensor which has a plurality of electrically connected resistance elements is placed on the substrate, a portion of the resistance elements form a resistance adjustment circuit. Integrated circuit elements are deposited by thin-film technology. It consists seed layer, copper thermal resistance thin-film layer above the seed layer and passivation layer above the copper thermal resistance thin-film layer. Through semiconductor manufacturing and processing technology, the thermistor layer of this structure is to be fabricated into a serious of thermistor wires and then to form the temperature sensor, furthermore this temperature sensor has a resistance adjustment circuit which is used to adjust resistance value precisely.

Abstract: The present invention comprises an anisotropic magnetoresistive (AMR) sensor without a set and reset device comprising a substrate, an exchange bias layer, an AMR layer and a collection of barber-pole electrodes. An exchange bias layer is deposited on the substrate and an AMR layer is deposited on the exchange bias layer. The AMR layer is composed of multiple groups of AMR strips, wherein each group of AMR strips is composed of several AMR strips. The barber-pole electrodes are arranged on each AMR strip under certain rules. The AMR sensor achieves coupling by using the exchange bias layer, without requiring a reset/set coil. Because a coil is not used, the power consumption of the chip is reduced greatly, and the manufacturing process is simpler, providing improved yield and lower cost.

Abstract: A copper thermal resistance thin-film temperature sensor chip comprises a substrate, a temperature sensor, and two electrode plates, the temperature sensor which has a plurality of electrically connected resistance elements is placed on the substrate, a portion of the resistance elements form a resistance adjustment circuit. Integrated circuit elements are deposited by thin-film technology. It consists seed layer, copper thermal resistance thin-film layer above the seed layer and passivation layer above the copper thermal resistance thin-film layer. Through semiconductor manufacturing and processing technology, the thermistor layer of this structure is to be fabricated into a serious of thermistor wires and then to form the temperature sensor, furthermore this temperature sensor has a resistance adjustment circuit which is used to adjust resistance value precisely.