Abstract: A conference minutes generation method is provided, which relates to the technical field of natural language processing. The conference minutes generation method comprises: acquiring a text conference record; dividing the text conference record into a plurality of conference paragraphs, generating a conference paragraph summary for each conference paragraph, and generating a conference record summary based on the conference paragraph summary of each conference paragraph; extracting conference instructions based on the text conference record; and generating the conference minutes based on the conference record summary and the conference instructions.

Abstract: A conference minutes generation method is provided, which relates to the technical field of natural language processing. The conference minutes generation method comprises: acquiring a text conference record; dividing the text conference record into a plurality of conference paragraphs, generating a conference paragraph summary for each conference paragraph, and generating a conference record summary based on the conference paragraph summary of each conference paragraph; extracting conference instructions based on the text conference record; and generating the conference minutes based on the conference record summary and the conference instructions.

Abstract: A gate driver integrated circuit is provided. The gate driver integrated circuit includes a first well region disposed at one side of a first gate structure near an isolation region, and a second gate structure between the first well region and the isolation region. The second gate structure is used to suppress a leakage current in a parasitic PN junction formed by a drift region between the first well region and the isolation region. A performance of the gate driver integrated circuit is improved.

Abstract: A gate driver integrated circuit is provided. The gate driver integrated circuit includes a first well region disposed at one side of a first gate structure near an isolation region, and a second gate structure between the first well region and the isolation region. The second gate structure is used to suppress a leakage current in a parasitic PN junction formed by a drift region between the first well region and the isolation region. A performance of the gate driver integrated circuit is improved.

Abstract: A piezoelectric device is provided with a rectangular crystal piece having driving electrodes on front and back main faces thereof, and a base member having two electrode pads near one short side of the crystal piece. The crystal piece is supported on the base member by two support portions near one short side thereof, and by an auxiliary support portion on the other short side thereof. A position of the auxiliary support portion relative to the other short side, where L is a distance between two short sides, and H is a distance from the other short side to a peripheral edge of the auxiliary support portion nearest to the other short side, is set to a position at which the distance H stays in a range of distances in which a maximum tensile stress acting on the auxiliary support portion and a maximum von Mises stress of the crystal piece are within predetermined ranges.

Abstract: A piezoelectric device is provided with a rectangular crystal piece having driving electrodes on front and back main faces thereof, and a base member having two electrode pads near one short side of the crystal piece. The crystal piece is supported on the base member by two support portions near one short side thereof, and by an auxiliary support portion on the other short side thereof. A position of the auxiliary support portion relative to the other short side, where L is a distance between two short sides, and H is a distance from the other short side to a peripheral edge of the auxiliary support portion nearest to the other short side, is set to a position at which the distance H stays in a range of distances in which a maximum tensile stress acting on the auxiliary support portion and a maximum von Mises stress of the crystal piece are within predetermined ranges.

Abstract: A method for electroplating a strip of foam having two opposite sides and an electrically conductive surface, including: (a) continuously applying the strip of foam onto a moving cathode immersed in an electroplating bath so that the strip travels through the bath in contact with the moving cathode to electroplate metal on the strip of foam, a first side of the strip of foam facing a working surface of the moving cathode, and (b) continuously removing the electroplated strip of foam from the moving cathode when metal has been plated to a desired thickness; A metal foil is continuously formed by electrodeposition on the working surface of the moving cathode in such a way that the strip of foam is applied at step (a) onto the moving cathode over the metal foil; and, after step (b), the metal foil is continuously removed from the moving cathode.

Abstract: A method for electroplating a strip of foam, the strip of foam having two opposite sides and an electrically conductive surface, comprises the steps of: continuously applying the strip of foam onto a moving cathode immersed in an electroplating bath so that the strip travels through the bath in contact with the moving cathode to electroplate metal on the strip of foam, a first side of the strip of foam facing a working surface of the moving cathode, and continuously removing the electroplated strip of foam from the moving cathode when metal has been plated to a desired thickness.