Abstract: A semiconductor device cell includes a drift region having a first conductivity type, a well region having a second conductivity type disposed adjacent to the drift region, the well region defining a set of well region segments. A source region having the first conductivity type is disposed adjacent to the well region and surrounded by the well region. A channel region having the second conductivity type, and defining a set of channel region segments a periphery of the channel region segment being surrounded by the well region. The well region, source region, and channel region cooperatively define a first axial length extending across the surface.

Abstract: A front end converter for interfacing prime power to a lower voltage distribution bus, e.g., Vdc, in a distributed power system has a natural droop characteristic which emulates a series resistor, but without associated losses. With this droop characteristic, converters are paralleled and share load current without any interconnecting control signals, thus avoiding any single point of failure and the need for several high-voltage isolation devices. The drooping effect also has a damping effect, resulting in a more stable power system.