Abstract: Apparatuses and methods for supporting a workpiece such as a semiconductor wafer. A support system is configured to support the workpiece while allowing thermally-induced motion of the workpiece, which may include thermal bowing or thermal bending. The system may include a support member having a moveable engagement portion engageable with the workpiece, the engagement portion being moveable to allow the thermally-induced motion of the workpiece while supporting the workpiece. The moveable engagement portion may include a plurality of moveable engagement portions of a plurality of respective support members, which may be resiliently engageable with the workpiece. The support members may include flexible support members each having an unconstrained portion and a constrained portion, and the moveable engagement portions may include the unconstrained portions.

Abstract: A first heat-treating method involves monitoring at least one thermal efficiency parameter associated with an irradiance system configured to produce an irradiance flash incident on a surface of a workpiece, and automatically updating control information used by the irradiance system to produce the irradiance flash, in response to the monitoring of the thermal efficiency parameter. A second method involves predicting a heating effect of an irradiance flash to be incident upon a surface of a workpiece, in response to a measurement of a heating parameter of the surface, and pre-adjusting the irradiance flash, in response to the predicted heating effect. A third method involves measuring a temperature of a surface of a workpiece during an initial portion of an irradiance flash incident on the surface, and controlling a power of a remaining portion of the irradiance flash, in response to the temperature.

Abstract: An apparatus for supporting a semiconductor workpiece includes a heating system configured to cause thermally-induced motion of the semiconductor workpiece by heating a surface of the workpiece relative to a bulk of the workpiece. The thermally-induced motion includes vertical motion of an outer edge region of the workpiece and a center of the workpiece relative to each other. The apparatus further includes a support system configured to allow the thermally-induced motion including the vertical motion of the outer edge region of the workpiece and the center of the workpiece relative to each other while supporting the workpiece.

Abstract: An apparatus for supporting a semiconductor workpiece includes a heating system configured to cause thermally-induced motion of the semiconductor workpiece by heating a surface of the workpiece relative to a bulk of the workpiece. The thermally-induced motion includes vertical motion of an outer edge region of the workpiece and a center of the workpiece relative to each other. The apparatus further includes a support system configured to allow the thermally-induced motion including the vertical motion of the outer edge region of the workpiece and the center of the workpiece relative to each other while supporting the workpiece.

Abstract: A first heat-treating method involves monitoring at least one thermal efficiency parameter associated with an irradiance system configured to produce an irradiance flash incident on a surface of a workpiece, and automatically updating control information used by the irradiance system to produce the irradiance flash, in response to the monitoring of the thermal efficiency parameter. A second method involves predicting a heating effect of an irradiance flash to be incident upon a surface of a workpiece, in response to a measurement of a heating parameter of the surface, and pre-adjusting the irradiance flash, in response to the predicted heating effect. A third method involves measuring a temperature of a surface of a workpiece during an initial portion of an irradiance flash incident on the surface, and controlling a power of a remaining portion of the irradiance flash, in response to the temperature.

Abstract: Apparatuses and methods for supporting a workpiece such as a semiconductor wafer. A support system is configured to support the workpiece while allowing thermally-induced motion of the workpiece, which may include thermal bowing or thermal bending. The system may include a support member having a moveable engagement portion engageable with the workpiece, the engagement portion being moveable to allow the thermally-induced motion of the workpiece while supporting the workpiece. The moveable engagement portion may include a plurality of moveable engagement portions of a plurality of respective support members, which may be resiliently engageable with the workpiece. The support members may include flexible support members each having an unconstrained portion and a constrained portion, and the moveable engagement portions may include the unconstrained portions.