Abstract: A semiconductor device may include a substrate comprising silicon carbide; a drift layer disposed over the substrate doped with a first dopant type; an anode region disposed adjacent to the drift layer, wherein the anode region is doped with a second dopant type; and a junction termination extension disposed adjacent to the anode region and extending around the anode region, wherein the junction termination extension has a width and comprises a plurality of discrete regions separated in a first direction and in a second direction and doped with varying concentrations with the second dopant type, so as to have an effective doping profile of the second conductivity type of a functional form that generally decreases along a direction away from an edge of the primary blocking junction.